相关论文: Anomalous robustness of the 5/2 fractional quantum…
Magneto-transport measurements in a wide GaAs quantum well in which we can tune the Fermi energy ($E_F$) to lie in different Landau levels of the two occupied electric subbands reveal a remarkable pattern for the appearance and…
Magneto-transport measurements in a clean two-dimensional electron system confined to a wide GaAs quantum well reveal that, when the electrons occupy two electric subbands, the sequences of fractional quantum Hall states observed at high…
We report the evolution of the fractional quantum Hall state (FQHS) at even-denominator filling factor $\nu=7/2$ in wide GaAs quantum wells in which electrons occupy two electric subbands. The data reveal subtle and distinct evolutions as a…
We report the observation of developing fractional quantum Hall states at Landau level filling factors $\nu = 1/2$ and 1/4 in electron systems confined to wide GaAs quantum wells with significantly $asymmetric$ charge distributions. The…
The evolution of the fractional quantum Hall state at filling 5/2 is studied in density tunable two-dimensional electron systems formed in wide wells in which it is possible to induce a transition from single to two subband occupancy. In 80…
We numerically study a 5/2 fractional quantum Hall system with even number of electrons using the exact diagonalization where both the strong Landau level (LL) mixing and a finite width of the quantum well have been considered and adapted…
Using a 50-nm width, ultra-clean GaAs/AlGaAs quantum well, we have studied the Landau level filling factor $\nu = 5/2$ fractional quantum Hall effect in a perpendicular magnetic field $B \sim$ 1.7 T and determined its dependence on tilted…
In wide GaAs quantum wells where two electric subbands are occupied we apply a parallel magnetic field or increase the electron density to cause a crossing of the two $N=0$ Landau levels of these subbands and with opposite spins. Near the…
Magnetotransport measurements on two-dimensional electrons confined to wide GaAs quantum wells reveal a remarkable evolution of the ground state at filling factor $\nu=1/2$ as we tilt the sample in the magnetic field. Starting with a…
In a low-disorder two-dimensional electron system, when two Landau levels of opposite spin or pseudospin cross at the Fermi level, the dominance of the exchange energy can lead to a ferromagnetic, quantum Hall ground state whose gap is…
The fractional quantum Hall effect (FQHE), observed in two-dimensional (2D) charged particles at high magnetic fields, is one of the most fascinating, macroscopic manifestations of a many-body state stabilized by the strong Coulomb…
We report experimental studies of disorder-induced transitions between quantum-Hall, metallic, and insulating states in a very dilute two-dimensional electron system in silicon at a magnetic field corresponding to Landau level filling…
Measurements in very low disorder two-dimensional electrons confined to relatively wide GaAs quantum well samples with tunable density reveal reentrant $\nu=1$ integer quantum Hall states in the lowest Landau level near filling factors…
We have studied the $\nu=5/2$ fractional quantum Hall state in a density-tunable sample at extremely low electron densities. For the densities accessed in our experiment, the Landau level mixing parameter $\kappa$ spans the…
We report magneto-transport measurements for the fractional quantum Hall state at filling factor $\nu=$ 5/2 as a function of applied parallel magnetic field ($B_{||}$). As $B_{||}$ is increased, the 5/2 state becomes increasingly…
Half-filled Landau levels host an emergent Fermi-liquid which displays an instability towards pairing, culminating in a gapped even-denominator fractional quantum Hall ground state. While this pairing may be probed by tuning the…
The Landau level mixing is the key in understanding the mysterious $5/2$ fractional quantum Hall effect in GaAs quantum well. Theoretical calculations with and without Landau level mixing show striking differences. However, the way to deal…
Fractional quantum Hall states (FQHSs) at even-denominator Landau level filling factors ($\nu$) are of prime interest as they are predicted to host exotic, topological states of matter. We report here the observation of a FQHS at $\nu=1/2$…
We report the observation of a fully developed fractional quantum Hall state at $\nu=5/2$ in GaAs/Al$_{x}$Ga$_{1-x}$As quantum wells with mobility well below $10^{7}$\thinspace cm$^{2}$/Vs. This is achieved either by strong illumination or…
We report an experimental investigation of fractional quantum Hall effect (FQHE) at the even-denominator Landau level filling factor $\nu$ = 1/2 in very high quality wide GaAs quantum wells, and at very high magnetic fields up to 45 T. The…