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相关论文: Non-linear doublon production in a Mott insulator …

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Charge creation via quantum tunneling, i.e. dielectric breakdown, is one of the most fundamental and significant phenomena arising from strong light(field)-matter coupling. In this work, we conduct a systematic numerical analysis of quantum…

强关联电子 · 物理学 2026-05-08 Thomas Hansen , Lars Bojer Madsen , Yuta Murakami

Recent advancements in pulse laser technology have facilitated the exploration of non-equilibrium spectroscopy of electronic states in the presence of strong electric fields across a broad range of photon energies. The Keldysh crossover…

强关联电子 · 物理学 2024-04-15 Kazuya Shinjo , Takami Tohyama

Using dynamical mean-field theory and the non-crossing approximation as impurity solver, we study the response of a Mott insulator to strong dc electric fields. The breakdown of the Mott insulating state is triggered by field-induced…

强关联电子 · 物理学 2013-07-01 Martin Eckstein , Philipp Werner

The nonadiabatic quantum tunneling picture, which may be called the many-body Schwinger-Landau-Zener mechanism, for the dielectric breakdown of Mott insulators in strong electric fields is studied in the one-dimensional Hubbard model. The…

统计力学 · 物理学 2014-11-18 Takashi Oka , Hideo Aoki

The fate of a Mott insulator under strong low frequency optical driving conditions is a fundamental problem in quantum many-body dynamics. Using ultrafast broadband optical spectroscopy, we measured the transient electronic structure and…

High-harmonic generation (HHG) in strongly correlated Mott insulators is investigated using exact diagonalization and time-dependent density-matrix propagation of a laser-driven one-dimensional Hubbard chain. By projecting onto equilibrium…

光学 · 物理学 2026-05-05 Tao-Yuan Du , Hui-Ru Li , Bo Li , Ruifeng Lu

We study high-harmonic generation (HHG) in the one-dimensional Hubbard model in order to understand its relation to elementary excitations as well as the similarities and differences to semiconductors. The simulations are based on the…

强关联电子 · 物理学 2021-01-13 Yuta Murakami , Shintaro Takayoshi , Akihisa Koga , Philipp Werner

We study the binding of a holon to a doublon in a half-filled Hubbard model as the mechanism of the zero-temperature metal-insulator transition. In a spin polarized system and a non-bipartite lattice a single holon-doublon (HD) pair…

强关联电子 · 物理学 2016-01-06 Peter Prelovšek , Jure Kokalj , Zala Lenarčič , Ross H. McKenzie

A mechanism of Mott transitions in a Bose Hubbard model on a square lattice is studied, using a variational Monte Carlo method. Besides an onsite correlation factor, we introduce a four-body doublon-holon factor into the trial state, which…

强关联电子 · 物理学 2009-11-13 Hisatoshi Yokoyama , Masao Ogata

Multiorbital interactions have the capacity to produce an interesting kind of doublon-holon bound state that consists of a single-hole state in one band and a doubly-occupied state in another band. Interband doublon-holon pair excitations…

强关联电子 · 物理学 2019-09-04 Yuekun Niu , Jian Sun , Yu Ni , Jingyi Liu , Yun Song , Shiping Feng

An analytical solution of the Mott transition is obtained for the Hubbard model on the Bethe lattice in the large coordination number ($z$) limit. The excitonic binding of doublons (doubly occupied sites) and holons (empty sites) is shown…

强关联电子 · 物理学 2016-12-15 Sen Zhou , Long Liang , Ziqiang Wang

Doublon-holon dynamics is investigated in a pumped one-dimensional Hubbard model with a staggered on?site Coulomb interaction at half-filling. When the system parameters are set to be in the Mott insulating regime the equilibrium sublattice…

强关联电子 · 物理学 2024-05-09 Zhenyu Cheng , Ying Li , Hantao Lu , Xiang Hu , Zhongbing Huang , Gregory A. Fiete , Liang Du

The breakdown of the Mott insulator is studied when the dissipative tunneling into the environment is introduced to the system. By exactly solving the one-dimensional asymmetric Hubbard model, we show how such a breakdown of the Mott…

统计力学 · 物理学 2009-10-31 T. Fukui , N. Kawakami

Nonlinear response of a Mott insulator to external electric field, corresponding to dielectric breakdown phenomenon, is studied within of a one-dimensional half-filled Hubbard model. It is shown that in the limit of nearly spin polarized…

强关联电子 · 物理学 2012-05-11 Zala Lenarčič , Peter Prelovšek

The kinetic features of holes (electrons) in the Hubbard model are studied using a variational Monte Carlo method. In doped Mott insulators (U>U_co), holes are classified, in the sense of conduction, into two categories: (i) The holes…

强关联电子 · 物理学 2012-11-28 H. Yokoyama , S. Tamura , K. Kobayashi , M. Ogata

Repulsive interactions between particles on a lattice may lead to bound states, so called doublons. Such states may be created by dynamically tuning the interaction strength, e.g. using a Feshbach resonance, from attraction to repulsion. We…

量子气体 · 物理学 2012-05-11 Michael Schecter , Alex Kamenev

We define, compute and analyze the nonequilibrium differential optical conductivity of the one-dimensional extended Hubbard model at half-filling after applying a pump pulse, using the time-dependent density matrix renormalization group…

强关联电子 · 物理学 2021-08-19 Julian Rincon , Adrian E. Feiguin

We study the behavior of the 2D repulsive Hubbard model on a square lattice at half filling, under strong driving with ac electric fields, by employing a time-dependent Gaussian variational approach. Within the same theoretical framework,…

强关联电子 · 物理学 2025-05-22 Radu Andrei , Mingyao Guo , Mustafa Ali , Hoon Kim , Richard D. Averitt , David Hsieh , Eugene Demler

We demonstrate the existence of an unconventional pairing state in photodoped Mott insulators on ladder and quasi-two-dimensional geometries, characterized by quasi-long-range doublon-holon correlations that signal Mott exciton…

强关联电子 · 物理学 2026-04-16 Ryota Ueda , Madhumita Sarkar , Zala Lenarčič , Denis Golež , Kazuhiko Kuroki , Tatsuya Kaneko

To understand the mechanism of Mott transitions in case of no magnetic influence, superfluid-insulator (Mott) transitions in the S=0 Bose Hubbard model at unit filling are studied on the square and triangular lattices, using a variational…

强关联电子 · 物理学 2015-03-19 Hisatoshi Yokoyama , Tomoaki Miyagawa , Masao Ogata
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