相关论文: Characterizing top gated bilayer graphene interact…

Raman spectroscopic studies of graphene have attracted much interest. The G-band Raman intensity of a single layer graphene on Si substrate with 300 nm SiO2 capping layer is surprisingly strong and is comparable to that of bulk graphite. To…

We present a combined experimental and theoretical study of photovoltage generation in a bilayer graphene (BLG) transistor structure exposed to subterahertz radiation. The device features a global bottom and split top gate, enabling…

We investigated Raman spectra of single-layer and multi-layer graphene under ultraviolet laser excitation at the wavelength of 325 nm. It was found that while the G peak of graphene remains pronounced in UV Raman spectra, the 2D band…

Using the continuum model, we investigate theoretically contribution of the low-energy electronic excitations to the Raman spectrum of superconducting monolayer graphene. We consider superconducting phases characterised by an isotropic…

The electronic structure and optical response of electrically gated bilayer graphene are studied by first-principles approaches. We have obtained the induced band gap that is in good agreement with experiment when the applied electric field…

Raman spectroscopy is one of the widely used methods in the analysis of various samples including carbon-based materials. This study aimed to identify the number of layers and defects in graphene using micro-Raman spectroscopy. More…

We discuss the physics of the tunable bandgap in bilayer graphene with the gate voltage and doping. A comparison with experimental data obtained by Kuzmenko et al [Phys. Rev. B \textbf{80}, 165406 (2009)] demonstrates the good agreement.

Results of room temperature Raman scattering studies of ultrathin graphitic films supported on Si (111)/SiO2 substrates are reported. The results are significantly different from those known for graphite. Spectra were collected using 514 nm…

Electrostatic gating offers elegant ways to simultaneously strain and dope atomically thin membranes. Here, we report on a detailed \textit{in situ} Raman scattering study on graphene, suspended over a Si/SiO$_2$ substrate. In such a…

Although plasmon modes exist in doped graphene, the limited range of doping achieved by gating restricts the plasmon frequencies to a range that does not include visible and infrared. Here we show, through the use of first-principles…

The magneto-phonon resonance or MPR occurs in semiconductor materials when the energy spacing between Landau levels is continuously tuned to cross the energy of an optical phonon mode. MPRs have been largely explored in bulk semiconductors,…

The measured frequencies and intensities of different first- and second- order Raman peaks of suspended graphene are used to show that optical phonons and different acoustic phonon polarizations are driven out of local equilibrium inside a…

This work analyzes the emission and radiation properties of a single optical emitter embedded in a graphene-coated subwavelength wire. We discuss the modifications of the spontaneous emission rate and the radiation efficiency as a function…

Electron-phonon coupling (EPC) in bilayer graphene (BLG) at different doping levels is studied by first-principles calculations. The phonons considered are long-wavelength high-energy symmetric (S) and antisymmetric (AS) optical modes. Both…

The electron-phonon interaction in monolayer graphene is investigated by using density functional perturbation theory. The results indicate that the electron-phonon interaction strength is of comparable magnitude for all four in-plane…

The conductance, the transmission and the reflection probabilities through rectangular potential barriers and pn-junctions are obtained for bilayer graphene taking into account the four bands of the energy spectrum. We have evaluated the…

We demonstrate that the low-frequency resistance fluctuations, or noise, in bilayer graphene is strongly connected to its band structure, and displays a minimum when the gap between the conduction and valence band is zero. Using…

This paper reports the experimental determination of the phase-breaking length L of conduction electrons in graphene using Raman spectroscopy. Based on the double-resonance model, we extract L from the spatial dependence of the D band…

Charge-neutral conducting systems represent a class of materials with unusual properties governed by electron-hole (e-h) interactions. Depending on the quasiparticles' statistics, band structure, and device geometry these semimetallic…

We study the optical conductivity in the low-energy regime of gapped mono- and bilayer graphene. A scaling relation is found, in which the four parameters frequency, gap, Fermi energy and temperature appear only as combination of three…