相关论文: Characterizing top gated bilayer graphene interact…

Graphene phonons are measured as a function of electron doping via the addition of potassium adatoms. In the low doping regime, the in-plane carbon G-peak hardens and narrows with increasing doping, analogous to the trend seen in graphene…

We study the effects of disorder on bilayer graphene using four different microscopic models and directly compare their results. We compute the self-energy, density of states, and optical conductivity in the presence of short-ranged…

The electronic properties of doped bilayer graphene in presence of bottom and top gates have been studied and characterized by means of Density Functional Theory calculations. Varying independently the bottom and top gates it is possible to…

Conduction between graphene layers is suppressed by momentum conservation whenever the layer stacking has a rotation. Here we show that phonon scattering plays a crucial role in facilitating interlayer conduction. The resulting dependence…

We report a high-pressure Raman spectroscopy study of a graphite-water mixture using water as the pressure-transmitting medium up to 9.9 GPa. In the graphite-rich region, three characteristic Raman features-the $E_{2g}^{(1)}$ shear mode,…

Van der Waals layered materials with well-defined twist angles between the crystal lattices of individual layers have attracted increasing attention due to the emergence of unexpected material properties. As many properties critically…

The unique property of bilayer graphene to show a band gap tunable by external electrical fields enables a variety of different device concepts with novel functionalities for electronic, optoelectronic and sensor applications. So far the…

We present complete calculations of the two-phonon Raman bands of bilayer graphene, including all overtone and combination modes, within a density-functional tight-binding model. Based on our results, we assign unambiguously the observed…

We calculate the inelastic scattering rates and the hot electron inelastic mean free paths for both monolayer and bilayer graphene on a polar substrate. We study the quasiparticle self-energy by taking into account both electron-electron…

We have investigated the effects of ozone treatment on graphene by Raman scattering. Sequential ozone short-exposure cycles resulted in increasing the $p$ doping levels as inferred from the blue shift of the 2$D$ and $G$ peak frequencies,…

Detection of local strain at the nanometer scale with high sensitivity remains challenging. Here we report near-field infrared nano-imaging of local strains in bilayer graphene through probing strain-induced shifts of phonon frequency. As a…

Raman measurements on monolayer graphene folded back upon itself as an ordered but skew-stacked bilayer (i.e. with interlayer rotation) presents new mechanism for Raman scattering in sp2 carbons that arises in systems that lack coherent AB…

One of the greatest issues of nanoelectronics today is how to control the heating of the components. Graphene is a promising material in this area and it is essential to study its thermal properties. Here, the effect of heating a bilayer…

The equilibrium optical phonons of graphene are well characterized in terms of anharmonicity and electron-phonon interactions, however their non-equilibrium properties in the presence of hot charge carriers are still not fully explored.…

The dispersion of phonons and the electronic structure of graphene systems can be obtained experimentally from the double-resonance (DR) Raman features by varying the excitation laser energy. In a previous resonance Raman investigation of…

If we stack up two layers of graphene while changing their respective orientation by some twisting angle, we end up with a system that has striking differences when compared to single-layer graphene. For a very specific value of this twist…

We report on a magneto-Raman scattering study of graphene flakes located on the surface of a bulk graphite substrate. By spatially mapping the Raman scattering response of the surface of bulk graphite with an applied magnetic field, we…

Scattering mechanisms in graphene are critical to understanding the limits of signal-to-noise-ratios of unsuspended graphene devices. Here we present the four-probe low frequency noise (1/f) characteristics in back-gated single layer…

We have investigated the effects of inplane and interplane nearest neighbour overlap integrals ($s_0$ and $s_1$) and site energy difference between atoms in two different sublattices in the same graphene layer ($\Delta$) on the electronic…

We have performed scanning gate microscopy (SGM) on graphene field effect transistors (GFET), using a biased metallic nanowire coated with a dielectric layer as a contact mode tip and local top gate. Electrical transport through graphene at…