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Graphene's linear dispersion relation and the attendant implications for bipolar electronics applications have motivated a range of experimental efforts aimed at producing p-n junctions in graphene. Here we report electrical transport…

In monolayer graphene, substitutional doping during growth can be used to alter its electronic properties. We used scanning tunneling microscopy (STM), Raman spectroscopy, x-ray spectroscopy, and first principles calculations to…

Controlled modulation of electronic band structure in two-dimensional (2D) materials via doping is crucial for devices fabrication. For instance doped graphene has been envisaged for various applications like sensors, super-capacitors,…

材料科学 · 物理学 2025-01-08 Imtiaz Noor Bhatti , J. Avila , Z. Chen , A. Baron , Y. Zhang , A. Shukla , P. Dudin

We achieve fine tuning of graphene effective doping by applying ultrahigh pressures (> 10 GPa) using Atomic Force Microscopy (AFM) diamond tips. Specific areas in graphene flakes are irreversibly flattened against a SiO2 substrate. Our work…

We distinguish three mechanisms of doping graphene. Density functional theory is used to show that electronegative molecule like F4-TCNQ and electropositive metals like K dope graphene p- and n-type respectively. These dopants are expected…

材料科学 · 物理学 2015-05-18 H. Pinto , R. Jones , J. P. Goss , P. R. Briddon

In this paper we describe a graphene p-n junction created by chemical doping. We find that chemical doping does not reduce mobility in contrast to top-gating. The preparation technique has been developed from systematic studies about…

介观与纳米尺度物理 · 物理学 2015-05-13 Timm Lohmann , Klaus v. Klitzing , Jurgen H. Smet

Graphene is a promising candidate to succeed silicon based devices and doping holds the key to graphene electronics. Conventional doping methods through surface functionalization or lattice modification are effective in tuning carrier…

介观与纳米尺度物理 · 物理学 2016-11-16 Yangbo Zhou , Jakub Jadwiszczak , Darragh Keane , Ying Chen , Dapeng Yu , Hongzhou Zhang

The thermodynamic, kinetic and magnetic properties of the hydrogen monomer on doped graphene layers were studied by ab initio simulations. Electron doping was found to heighten the diffusion potential barrier, while hole doping lowers it.…

We study the effects of metallic doping on the electronic properties of graphene using density functional theory in the local density approximation in the presence of a local charging energy (LDA+U). The electronic properties are sensitive…

材料科学 · 物理学 2009-11-13 B. Uchoa , C. -Y. Lin , A. H. Castro Neto

Tuning the charge carrier density of two-dimensional (2D) materials by incorporating dopants into the crystal lattice is a challenging task. An attractive alternative is the surface transfer doping by adsorption of molecules on 2D crystals,…

A significant advance toward achieving practical applications of graphene as a two-dimensional material in nanoelectronics would be provided by successful synthesis of both n-type and p-type doped graphene. However reliable doping and a…

The design of stacks of layered materials in which adjacent layers interact by van der Waals forces[1] has enabled the combination of various two-dimensional crystals with different electrical, optical and mechanical properties, and the…

介观与纳米尺度物理 · 物理学 2016-02-17 L. Ju , J. Velasco , E. Huang , S. Kahn , C. Nosiglia , H. Tsai , W. Yang , T. Taniguchi , K. Watanabe , Y. Zhang , G. Zhang , M. Crommie , A. Zettl , F. Wang

We have investigated antidot lattices, which were prepared on exfoliated graphene single layers via electron-beam lithography and ion etching, by means of scanning Raman spectroscopy. The peak positions, peak widths and intensities of the…

介观与纳米尺度物理 · 物理学 2011-07-01 S. Heydrich , M. Hirmer , C. Preis , T. Korn , J. Eroms , D. Weiss , C. Schüller

We demonstrate electrochemical top gating of graphene by using a solid polymer electrolyte. This allows to reach much higher electron and hole doping than standard back gating. In-situ Raman measurements monitor the doping. The G peak…

Due to their unique dimensionality, the physical properties of two-dimensional materials are deeply impacted by their surroundings, calling for a thorough understanding and control of these effects. We investigated the influence of the…

Ab-initio calculations have been performed to study the geometry and electronic structure of boron (B) and nitrogen (N) doped graphene sheet. The effect of doping has been investigated by varying the concentrations of dopants from 2 % (one…

介观与纳米尺度物理 · 物理学 2012-09-25 Pooja Rani , V. K. Jindal

The electrical properties of graphene are known to be modified by chemical species that interact with it. We investigate the effect of doping of graphene-based devices by toluene (C6H5CH3). We show that this effect has a complicated…

材料科学 · 物理学 2010-10-25 A. A. Kaverzin , S. M. Strawbridge , A. S. Price , F. Withers , A. K. Savchenko , D. W. Horsell

We present a joint theoretical and experimental investigation of charge doping and electronic potential landscapes in hybrid structures composed of graphene and semiconducting single layer MoS2. From first-principles simulations we find…

介观与纳米尺度物理 · 物理学 2013-12-23 B. Sachs , L. Britnell , T. O. Wehling , A. Eckmann , R. Jalil , B. D. Belle , A. I. Lichtenstein , M. I. Katsnelson , K. S. Novoselov

To minimize parasitic doping effects caused by uncontrolled material adsorption, graphene is often investigated under vacuum. Here we report an entirely unexpected phenomenon occurring in vacuum systems, namely strong n-doping of graphene…

介观与纳米尺度物理 · 物理学 2013-11-11 Christophe Caillier , Dong-Keun Ki , Yuliya Lisunova , Iaroslav Gaponenko , Patrycja Paruch , Alberto F. Morpurgo

Two-dimensional (2d) nano-electronics, plasmonics, and emergent phases require clean and local charge control, calling for layered, crystalline acceptors or donors. Our Raman, photovoltage, and electrical conductance measurements combined…

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