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相关论文: Insulator-to-metal transition in sulfur-doped sili…

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We report on the insulator-to-metal transition in Se-hyperdoped Si layers driven by manipulating the Se concentration via non-equilibrium material processing, i.e. ion implantation followed by millisecond-flash lamp annealing. Electrical…

材料科学 · 物理学 2017-10-11 F. Liu , S. Prucnal , Y. Berencén , Z. Zhang , Y. Yuan , Y. Liu , R. Heller , R. Boettger , L. Rebohle , W. Skorupa , M. Helm , S. Zhou

The insulator-to-metal transition in dense fluid hydrogen is an essential phenomenon to understand gas giant planetary interiors and the physical and chemical behavior of highly compressed condensed matter. Using fast laser spectroscopy…

Hyperdoping Si with chalcogens is a topic of great interest due to the strong sub-bandgap absorption exhibited by the resulting material, which can be exploited to develop broadband room-temperature infrared photodetectors using fully…

材料科学 · 物理学 2020-09-16 Mao Wang , A. Debernardi , Wenxu Zhang , Chi Xu , Ye Yuan , Yufang Xie , Y. Berencén , S. Prucnal , M. Helm , Shengqiang Zhou

Because it is easily switched from insulator to metal either via chemical doping or electrical gating, silicon is at the core of modern information technology and remains a candidate platform for quantum computing. The metal-to-insulator…

Observations are reported of a metal-insulator transition in a 2D hole gas in asymmetrically doped strained SiGe quantum wells. The metallic phase, which appears at low temperatures in these high mobility samples, is characterised by a…

强关联电子 · 物理学 2009-10-30 P. T. Coleridge , R. L. Williams , Y. Feng , P. Zawadzki

Hyperdoping has emerged as a promising method for designing semiconductors with unique optical and electronic properties, although such properties currently lack a clear microscopic explanation. Combining computational and experimental…

Tin doped indium oxide (ITO) thin films are being used extensively as transparent conductors in several applications. In the present communication, we report the electrical transport in DC magnetron sputtered ITO thin films in low…

材料科学 · 物理学 2016-10-28 Deepak Kumar Kaushik , K Uday Kumar , A. Subrahmanyam

We have varied the disorder in a two-dimensional electron system in silicon by applying substrate bias. When the disorder becomes sufficiently low, we observe the emergence of the metallic phase, and find evidence for a metal-insulator…

强关联电子 · 物理学 2009-10-30 Dragana Popovic , A. B. Fowler , S. Washburn

Electron tunneling experiments are used to probe Coulomb correlation effects in the single-particle density-of-states (DOS) of boron-doped silicon crystals near the critical density of the metal-insulator transition (MIT). At low energies,…

无序系统与神经网络 · 物理学 2014-11-20 Mark Lee , J. G. Massey , V. L. Nguyen , B. I. Shklovskii

We measure the normal-state in-plane resistivity of La-doped Bi-2201 single crystals at low temperatures by suppressing superconductivity with 60-T pulsed magnetic fields. With decreasing hole doping, we observe a crossover from a metallic…

超导电性 · 物理学 2009-10-31 S. Ono , Yoichi Ando , T. Murayama , F. F. Balakirev , J. B. Betts , G. S. Boebinger

Magnetization curve and changes of the single-particle excitation spectra by magnetic field are calculated for the periodic Anderson model at half-filling in infinite spatial dimension by using the exact diagonalization method. It is found…

凝聚态物理 · 物理学 2009-10-28 Tetsuro Saso , Masatoshi Itoh

The recent observation of a insulator to metal transition (IMT) [I. Loa et al, PRL 87, 125501 (2001)] in pure LaMnO$_3$ at 32 GPa and room temperature, well above the Neel temperature (145 K) and below the Jahn-Teller transition temperature…

强关联电子 · 物理学 2009-04-16 Javier D. Fuhr , Blas Alascio , Michel Avignon

The metal-insulator transition (MIT) observed in two-dimensional (2D) systems is apparently contradictory to the well known scaling theory of localization. By investigating the conductance of disordered one-dimensional systems with a finite…

强关联电子 · 物理学 2009-10-31 Junren Shi , X. C. Xie

A new two-pole approximation, which allows to describe the transition from an insulating state to a metallic one at increase of bandwidth, and also the observable in some compounds transition from a metalic state to an insulating one with…

强关联电子 · 物理学 2007-05-23 Leonid Didukh

Measurements of the DC resistivity of under-doped cuprate superconductors have revealed a metal--insulator transition at low temperatures when superconductivity is suppressed by a very large magnetic field, with the resistivity growing…

超导电性 · 物理学 2007-05-23 Benjamin Morgan , D. M. Broun , Ruixing Liang , D. A. Bonn , W. N. Hardy , J. R. Waldram

We have investigated the interplay between the metal-insulator transition and ferromagnetism in $({\rm III}_{1-x},{\rm Mn}_x){\rm V}$ ferromagnetic semiconductors. Our study is based on a model in which $S=5/2$ Mn local moments are…

凝聚态物理 · 物理学 2009-11-07 S. -R. Eric Yang , A. H. MacDonald

Crystal structures of $\textrm{CLi}_4$ compounds are explored through \emph{ab} \emph{initio} evolutionary methodology. Phase transition from metal to semimetal and semiconductor, and eventually to insulator with increasing pressure are…

材料科学 · 物理学 2016-04-27 Xilian Jin , Xiao-Jia Chen , Huadi Zhang , Quan Zhuang , Kuo Bao , Dawei Zhou , Qiang Zhou , Zhi He , Bingbing Liu , Tian Cui

We report infrared studies of the insulator-to-metal transition (IMT) in GaAs doped with either magnetic (Mn) or non-magnetic acceptors (Be). We observe a resonance with a natural assignment to impurity states in the insulating regime of…

We calculate the corrections to the conductivity and compressibility of a disordered metal when the mean free path is smaller than the screening length. Such a condition is shown to be realized for low densities and large disorder. Analysis…

强关联电子 · 物理学 2009-10-31 Qimiao Si , C. M. Varma

The temperature dependence of conductivity $\sigma (T)$ of a two-dimensional electron system in silicon has been studied in parallel magnetic fields B. At B=0, the system displays a metal-insulator transition at a critical electron density…

强关联电子 · 物理学 2009-11-07 Kevin Eng , X. G. Feng , Dragana Popovic , S. Washburn
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