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We present numerical simulations of high field transport in both suspended and deposited armchair graphene nanoribbon (A-GNR) on HfO2 substrate. Drift velocity in suspended GNR does not saturate at high electric field (F), but rather…

介观与纳米尺度物理 · 物理学 2015-05-30 Alessandro Betti , Gianluca Fiori , Giuseppe Iannaccone

We investigate the influence of low-dimensionality and disorder in phonon transport in ultra-narrow armchair graphene nanoribbons (GNRs) using non-equilibrium Greens function (NEGF) simulation techniques. We specifically focus on how…

介观与纳米尺度物理 · 物理学 2015-04-15 Hossein Karamitaheri , Mahdi Pourfath , Hans Kosina , Neophytos Neophytou

We have investigated the main scattering mechanisms affecting mobility in graphene nanoribbons using detailed atomistic simulations. We have considered carrier scattering due to acoustic and optical phonons, edge roughness, single defects,…

介观与纳米尺度物理 · 物理学 2011-03-03 Alessandro Betti , Gianluca Fiori , Giuseppe Iannaccone

Sub-10nm wide graphene nanoribbon field-effect transistors (GNRFETs) are studied systematically. All sub-10nm GNRs afforded semiconducting FETs without exception, with Ion/Ioff ratio up to 10^6 and on-state current density as high as…

介观与纳米尺度物理 · 物理学 2009-11-13 Xinran Wang , Yijian Ouyang , Xiaolin Li , Hailiang Wang , Jing Guo , Hongjie Dai

We performed an investigation concerning bipolaron dynamics in armchair graphene nanoribbons (AGNRs) under the influence of different electric field and electron-phonon coupling regimes. By studying the response to the electric excitation,…

We report electrical transport measurements on a suspended ultra-low-disorder graphene nanoribbon(GNR) with nearly atomically smooth edges that reveal a high mobility exceeding 3000 cm2 V-1 s-1 and an intrinsic band gap. The experimentally…

We study the impact of BN's phonons on the electrical resistivity of hBN-encapsulated graphene. While encapsulation yields high-mobility devices, the surrounding BN itself introduces remote scattering from polar optical phonons, whose role…

We theoretically calculate the phonon scattering limited electron mobility in extrinsic (i.e. gated or doped with a tunable and finite carrier density) 2D graphene layers as a function of temperature $(T)$ and carrier density $(n)$. We find…

介观与纳米尺度物理 · 物理学 2008-05-12 E. H. Hwang , S. Das Sarma

Atomically precise graphene nanoribbons (GNRs) have emerged as promising candidates for nanoelectronic applications due to their widely tunable energy band gaps resulting from lateral quantum confinement and edge effects. Here we report on…

The transport properties of carriers in semiconducting graphene nanoribbons are studied by comparing the effects of phonon, impurity, and line-edge roughness scattering. It is found that scattering from impurities located at the surface of…

材料科学 · 物理学 2009-11-13 Tian Fang , Aniruddha Konar , Huili Xing , Debdeep Jena

Using the non-equilibrium Green's functions formalism in a tight binding model, the spin-dependent transport in armchair graphene nanoribbon (GNR) structures controlled by a ferromagnetic gate is investigated. Beyond the oscillatory…

介观与纳米尺度物理 · 物理学 2013-06-11 V. Hung Nguyen , V. Nam Do , A. Bournel , V. Lien Nguyen , P. Dollfus

We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature. Our…

介观与纳米尺度物理 · 物理学 2008-01-07 S. V. Morozov , K. S. Novoselov , M. I. Katsnelson , F. Schedin , D. C. Elias , J. A. Jaszczak , A. K. Geim

We present symmetry properties of the lattice vibrations of graphene nanoribbons with pure armchair (AGNR) and zigzag edges (ZGNR). In non-symmorphic nanoribbons the phonon modes at the edge of the Brillouin zone are twofold degenerate,…

介观与纳米尺度物理 · 物理学 2015-05-18 Roland Gillen , Marcel Mohr , Janina Maultzsch

The temperature dependence of the mobility in suspended graphene samples is investigated. In clean samples, flexural phonons become the leading scattering mechanism at temperature $T \gtrsim 10\,\,$K, and the resistivity increases…

Under which conditions do the electrical transport properties of one-dimensional (1D) carbon nanotubes (CNTs) and 2D graphene become equivalent? We have performed atomistic calculations of the phonon-limited electrical mobility in graphene…

Phonons are responsible for limiting both the electron mobility and the spin relaxation time in solids and provide a mechanism for thermal transport. In view of a possible transistor function as well as spintronics applications in graphene…

介观与纳米尺度物理 · 物理学 2011-10-07 Matthias Droth , Guido Burkard

Graphene has shown impressive properties for nanoelectronics applications including a high mobility and a width-dependent bandgap. Use of graphene in nanoelectronics would most likey be in the form of graphene nanoribbons (GNRs) where the…

介观与纳米尺度物理 · 物理学 2015-05-18 Yinxiao Yang , Raghunath Murali

We investigate high-field transport in graphene nanoribbons (GNRs) on SiO2, up to breakdown. The maximum current density is limited by self-heating, but can reach >3 mA/um for GNRs ~15 nm wide. Comparison with larger, micron-sized graphene…

介观与纳米尺度物理 · 物理学 2011-06-29 Albert D. Liao , Justin Z. Wu , Xinran Wang , Kristof Tahy , Debdeep Jena , Hongjie Dai , Eric Pop

We report a numerical study on Aharonov-Bohm (AB) effect and giant magnetoresistance in rectangular rings made of graphene nanoribbons (GNRs). We show that in low energy regime where only the first subband of contact GNRs contributes to the…

介观与纳米尺度物理 · 物理学 2013-07-05 Viet-Hung Nguyen , Yann-Michel Niquet , Philippe Dollfus

We investigate electron-phonon couplings, scattering rates, and mean free paths in zigzag-edge graphene strips with widths of the order of 10 nm. Our calculations for these graphene nanostrips show both the expected similarity with…

介观与纳米尺度物理 · 物理学 2007-05-23 D. Gunlycke , H. M. Lawler , C. T. White
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