相关论文: Effect of nano-scale surface roughness on transver…

A set of thin GaAs p-type negative electron affinity (NEA) photocathodes have been used to measure the yield of photoemitted electrons at high intensity excitation. The active layer thickness is 100 nm and the p-type doping ranges from…

GeAs is a layered material of the IV-V groups that is attracting growing attention for possible applications in electronic and optoelectronic devices. In this study, exfoliated multilayer GeAs nanoflakes are structurally characterized and…

The separation of solids in adhesive contact, or the fracture of solid bodies, often results in the emission of high energy photons, e.g., visible light and X-rays. This is believed to be related to charge separation. We propose that the…

We perform time- and angle-resolved photoelectron spectroscopy on p-type GaAs(110). We observe an optically excited population in the conduction band, from which the time scales of intraband relaxation and surface photovoltage decay are…

Metal photocathodes are an important source of high-brightness electron beams, ubiquitous in the operation of both large-scale accelerators and table-top microscopes. When the surface of a metal is nano-engineered with patterns on the order…

The surface is known to intercept energy from bombarding particles. This energy then spreads over the surface. Before now, it has always been said that the distribution of this energy landing on the surface is always Gaussian. However, in…

Low field response function calculations have been performed on a two-dimensional electron gas with well-defined electron-surface roughness scattering. The Lindhard model was employed to compute the response function. In particular,…

We probe the electron transport properties in the shell of GaAs/In0.2Ga0.8As core/shell nanowires at high electric fields using optical pump / THz probe spectroscopy with broadband THz pulses and peak electric fields up to 0.6 MV/cm. The…

The short diffusion lengths in insertion battery nanoparticles render the capacitive behavior of bounded diffusion, which is rarely observable with conventional larger particles, now accessible to impedance measurements. Coupled with…

We evidence the influence of surface effects for InAs quantum dots embedded into GaAs photonic nanowires used as efficient single photon sources. We observe a continuous temporal drift of the emission energy that is an obstacle to resonant…

We present a set of experimental results identifying various effects that govern the carrier dynamics of self-catalyzed GaAs/AlGaAs core-shell nanowires (NWs) grown by molecular beam epitaxy i.e. surface recombination velocity, surface…

The dispersive spreading of microscopic particles in shear flows is influenced both by advection and thermal motion. At the nanoscale, interactions between such particles and their confining boundaries become unavoidable. We address the…

In this paper the scattering rates of electrons in thin free standing GaAs quantum wires in the electric quantum limit are calculated self-consistently taking into account the collisional broadening caused by scattering processes. The…

Gallium arsenide (GaAs) is the widest used second generation semiconductor with a direct band gap and increasingly used as nanofilms. However, the magnetic properties of GaAs nanofilms have never been studied. Here we find by comprehensive…

Temperature-dependent I-V and C-V spectroscopy of single InAs nanowire field-effect transistors were utilized to directly shed light on the intrinsic electron transport properties as a function of nanowire radius. From C-V…

Surface charging is a phenomenon ubiquitously observable in in-situ transmission electron microscopy of non-conducting specimens as a result of electron beam/sample interactions or optical stimuli and often limits the achievable image…

We show that for collisions of electrons with a high-intensity laser, discrete photon emissions introduce a transverse beam spread which is distinct from that due to classical (or beam shape) effects. Via numerical simulations, we show that…

The effect of edge-type dislocation wall strain field on the Hall mobility in n-type epitaxial GaN was theoretically investigated through deformation potential within the relaxation time approach. It was found that this channel of…

In this paper, we develop a theory of edge effects in graphene for its applications to nanoantennas in the terahertz, infrared, and visible frequency ranges. Its characteristic feature is selfconsistence reached due the formulation in terms…

The effects of edge irregularity and mixed edge shapes on the characteristics of graphene nanoribbon transistors are examined by self-consistent atomistic simulations based on the non-equilibrium Green's function formalism. The minimal…