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相关论文: Graphene on the carbon face of SiC: electronic str…

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The atomic and electronic structures of a graphene layer on top of the $(2\times2)$ reconstruction of the SiC (000$\bar{1}$) surface are studied from ab initio calculations. At variance with the (0001) face, no C bufferlayer is found here.…

材料科学 · 物理学 2015-05-13 L. Magaud , F. Hiebel , F. Varchon , P. Mallet , J. -Y. Veuillen

Recent transport measurements on thin graphite films grown on SiC show large coherence lengths and anomalous integer quantum Hall effects expected for isolated graphene sheets. This is the case eventhough the layer-substrate epitaxy of…

We present an orbital-resolved density functional theory study on the electronic properties of hydrogen and lithium intercalated graphene grown on the Si face of SiC. Starting from the $(6\sqrt3\times6\sqrt3)R30^{\circ}$ surface…

介观与纳米尺度物理 · 物理学 2012-01-17 I. Deretzis , A. La Magna

Principal structural defects in graphene layers, synthesized on a carbon-terminated face, i.e. the SiC(000) face of a 4H-SiC substrate, are investigated using microscopic methods. Results of high-resolution transmission electron microscopy…

The potential of graphene to impact the development of the next generation of electronics has renewed interest in its growth and structure. The graphitization of hexagonal SiC surfaces provides a viable alternative for the synthesis of…

介观与纳米尺度物理 · 物理学 2015-05-13 Y. Qi , S. H. Rhim , G. F. Sun , M. Weinert , L. Li

Epitaxial graphene, grown on SiC(0001) surface, has been widely studied both experimentally and theoretically. It was found that first epitaxial graphene layer in such structures is a buffer layer i.e. there are no characteristic Dirac…

材料科学 · 物理学 2015-03-13 Jakub Soltys , Jacek Piechota , Michal Lopuszynski , Stanislaw Krukowski

Employing density-functional calculations we study single and double graphene layers on Si- and C-terminated 1x1-6H-SiC surfaces. We show that, in contrast to earlier assumptions, the first carbon layer is covalently bonded to the…

材料科学 · 物理学 2009-11-13 Alexander Mattausch , Oleg Pankratov

Intercalation at the graphene/SiC interface provides a controlled route to stabilize atomically thin layers with properties distinct from their bulk counterparts. In this platform, the structure and stability of the intercalated phase…

We show using scanning tunneling microscopy, spectroscopy, and ab initio calculations that several intercalation structures exist for Na in epitaxial graphene on SiC(0001). Intercalation takes place at room temperature and Na electron-dopes…

介观与纳米尺度物理 · 物理学 2011-12-01 Andreas Sandin , Thushari Jayasekera , J. E. , Rowe , Ki Wook Kim , M. Buongiorno Nardelli , Daniel B. Dougherty

Graphene, the two-dimensional form of carbon presents outstanding electronic and transport properties. This gives hope for the development of applications in nanoelectronics. However, for industrial purpose, graphene has to be supported by…

材料科学 · 物理学 2015-05-13 L. Magaud , F. Hiebel , F. Varchon , P. Mallet , J. -Y. Veuillen

We address the energetic stability of the graphene/SiC(0001) interface and the associated binding mechanism by studying a series of low-strain commensurate interface structures within a density functional scheme. Among the structures with…

介观与纳米尺度物理 · 物理学 2012-05-23 Gabriele Sclauzero , Alfredo Pasquarello

We present a systematical study via scanning tunneling microscopy (STM) and low-energy electron diffraction (LEED) on the effect of the exposure of Lithium (Li) on graphene on silicon carbide (SiC). We have investigated Li deposition both…

材料科学 · 物理学 2017-09-29 Sara Fiori , Yuya Murata , Stefano Veronesi , Antonio Rossi , Camilla Coletti , Stefan Heun

The structure of the SiC(000-1) surface, the C-face of the {0001} SiC surfaces, is studied as a function of temperature and of pressure in a gaseous environment of disilane (Si2H6). Various surface reconstructions are observed, both with…

介观与纳米尺度物理 · 物理学 2019-08-28 Jun Li , Qingxiao Wang , Guowei He , Michael Widom , Lydia Nemec , Volker Blum , Moon Kim , Patrick Rinke , Randall M. Feenstra

The formation of graphene on the SiC(000-1) surface (the C-face of the {0001} surfaces) has been studied, utilizing both disilane and neon environments. In both cases, the interface between the graphene and the SiC is found to be different…

介观与纳米尺度物理 · 物理学 2015-06-05 Guowei He , N. Srivastava , R. M. Feenstra

Silicon carbide (SiC) is an excellent substrate for growth and manipulation of large scale, high quality epitaxial graphene. On the carbon face (the ($\bar{1}\bar{1}\bar{1}$) or $(000\bar{1}$) face, depending on the polytype), the onset of…

材料科学 · 物理学 2019-10-23 Jan Kloppenburg , Lydia Nemec , Björn Lange , Matthias Scheffler , Volker Blum

Intercalation has proven to be a powerful tool for tailoring the electronic properties of freestanding graphene layers as well as for stabilizing the intercalated material in a two-dimensional configuration. This work examines Si…

Graphene films prepared by heating the SiC(000-1) surface (the C-face of the {0001} surfaces) in a Si-rich environment are studied using low-energy electron diffraction (LEED) and low-energy electron microscopy (LEEM). Upon graphitization,…

介观与纳米尺度物理 · 物理学 2015-09-16 Guowei He , N. Srivastava , R. M. Feenstra

We perform local nanoscale studies of the surface and interface structure of hydrogen intercalated graphene on 4H-SiC(1000). In particular, we show that intercalation of the interfacial layer results in the formation of quasi-free standing…

We investigate the structural and electronic properties of Li-intercalated monolayer graphene on SiC(0001) using combined angle-resolved photoemission spectroscopy and first-principles density functional theory. Li intercalates at room…

We present a structural analysis of the graphene-4HSiC(0001) interface using surface x-ray reflectivity. We find that the interface is composed of an extended reconstruction of two SiC bilayers. The interface directly below the first…

材料科学 · 物理学 2009-11-13 J. Hass , J. E. Millan-Otoya , P. N. First , E. H. Conrad
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