相关论文: An initial phase of Ge hut array formation at low …
We investigate the feasibility of epitaxial growth of a three-dimensional semiconductor on a two-dimensional substrate. In particular, we report for the first time on molecular beam epitaxy growth of cadmium telluride (CdTe) quantum wells…
Scanning tunnelling microscopy has been used to study the formation of a Bi monolayer deposited on the five-fold surface of i-Al70Pd21Mn9. Upon deposition of low sub-monolayer coverages, the nucleation of pentagonal clusters of Bi adatoms…
Group IV alloys of GeSn have gained significant attention for electronic and optoelectronic applications on a Si platform due to their compatibility with existing CMOS technology, tunable band structure, and potential for a direct bandgap…
Atomic structures of quasi-one-dimensional (1D) character can be grown on semiconductor substrates by metal adsorption. Significant progress concerning study of their 1D character has been achieved recently by condensing noble metal atoms…
We report on the low-temperature fabrication (300$\deg$C) of ultrathin 2D amorphous carbon layers on III-V semiconductors by plasma-enhanced chemical vapor deposition as a universal template for remote epitaxy. We present growth and…
We grow nearly freestanding single-layer 1T'-WTe2 on graphitized 6H-SiC(0001) by using molecular beam epitaxy (MBE), and characterize its electronic structure with scanning tunneling microscopy / spectroscopy (STM/STS). We demonstrate the…
The Si(001) surface morphology during ion sputtering at elevated temperatures and solid phase epitaxy following ion sputtering at room temperature has been investigated using scanning tunneling microscopy. Two types of antiphase boundaries…
First-principles calculations using density functional theory based on norm-conserving pseudopotentials have been performed to investigate the Mg adsorption on the Si(001) surface for 1/4, 1/2 and 1 monolayer coverages. For both 1/4 and 1/2…
The incubation time preceding nucleation and growth of surface nanostructures is interesting from a fundamental viewpoint but also of practical relevance as it determines statistical properties of nanostructure ensembles such as size…
The extent of hydrogen coverage of the Si(001)c(4x2) surface in the presence of hydrogen gas has been studied with dispersion corrected density functional theory. Electronic energy contributions are well described using a hybrid functional.…
Electrical properties of multilayer arrays of germanium nanoclusters grown on the silicon (001) surface at low temperature have been studied. A correlation between the quantum dot (QD) density estimated from STM and the charge accumulated…
Several semiconductor quantum dot techniques have been investigated for the generation of entangled photon pairs. Among the other techniques, droplet epitaxy enables the control of the shape, size, density, and emission wavelength of the…
We grow strained Ge/SiGe heterostructures by reduced-pressure chemical vapor deposition on 100 mm Ge wafers. The use of Ge wafers as substrates for epitaxy enables high-quality Ge-rich SiGe strain-relaxed buffers with a threading…
Highly oriented pyrolitic graphite (HOPG) is an inert substrate with a structural honeycomb lattice, well suited for the growth of two-dimensional (2D) silicene layer. It was reported that when Si atoms are deposited on HOPG surface at room…
To understand surface structural modifications for Au/Si (100) system, a thin gold film of ~2.0 nm was deposited under ultra high vacuum (UHV) condition on reconstructed Si surfaces using molecular beam epitaxy (MBE). Post annealing was…
We report on photoluminescence measurements of vertically stacked InAs/GaAs quantum dots grown by molecular-beam epitaxy on focused ion beam patterned hole arrays with varying array spacing. Quantum dot emission at 1.24 eV was observed only…
The epitaxial growth process of a high symmetry surface occurs because adatoms meet and nucleate new islands, that eventually coalesce and complete atomic layers. During multilayer growth, nucleation usually takes place on top of terraces…
We present an investigation of Mn {\delta}-doped layers in Si(001) grown by molecular beam epitaxy. We discovered that a Pb surfactant has significant effect on the structural and magnetic properties of the submonolayer of Mn, which depends…
Low temperature epitaxial breakdown of inhomogeneously strained Si capping layers is investigated. By growing Si films on coherently strained GeSi quantum dot surfaces, we differentiate effects of surface roughness, strain, and growth…
Using atomic force microscopy, we have studied the surface structures of high quality molecular beam epitaxy grown (Ga,Mn)As compound. Several samples with different thickness and Mn concentration, as well as a few (Ga,Mn)(As,P) samples…