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相关论文: Negative differential resistance in scanning tunne…

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We have observed tunable negative differential resistance (NDR) in scanning tunneling spectroscopy measurements of a double layer of C60 molecules on a metallic surface. Using a simple model we show that the observed NDR behavior is…

介观与纳米尺度物理 · 物理学 2007-05-23 M. Grobis , A. Wachowiak , R. Yamachika , M. F. Crommie

Combining insights from quantum chemistry calculations with master equations, we discuss a mechanism for negative differential resistance (NDR) in molecular junctions, operated in the regime of weak tunnel coupling. The NDR originates from…

介观与纳米尺度物理 · 物理学 2013-01-10 Martin Leijnse , Wei Sun , Mogens Brøndsted Nielsen , Per Hedegård , Karsten Flensberg

The conductance-voltage spectrum of molecular nanostructures measured by scanning tunneling spectroscopy (STS) is generally assumed to reflect the local density of states of the molecule. This excludes the possibility of observing negative…

介观与纳米尺度物理 · 物理学 2009-10-31 Yongqiang Xue , Supriyo Datta , Seunghun Hong , R. Reifenberger , Jason I. Henderson , Cliff P. Kubiak

We present the multilevel fabrication and measurement of a Coulomb-blockade device displaying tunable negative differential resistance (NDR). Applications for devices displaying NDR include amplification, logic, and memory circuits. Our…

介观与纳米尺度物理 · 物理学 2009-10-31 C. P. Heij , D. C. Dixon , P. Hadley , J. E. Mooij

Nonlinear electrical properties, such as negative differential resistance (NDR), are essential in numerous electrical circuits, including memristors. Several physical origins have been proposed to lead to the NDR phenomena in semiconductor…

We report two examples of transport phenomena based on sharp features in the effective density of states of molecular-scale transistors: Kondo physics in C$_{60}$-based devices, and gate-modulated negative differential resistance (NDR) in…

介观与纳米尺度物理 · 物理学 2007-05-23 L. H. Yu , D. Natelson

A new mechanism is proposed to explain the origin of negative differential resistance (NDR) in a strongly coupled single molecule-metal junction. A first-principles quantum transport calculation in a Fe-terpyridine linker molecule…

介观与纳米尺度物理 · 物理学 2009-11-13 Ranjit Pati , Mike McClain , Anirban Bandyopadhyay

We investigate the atomic-scale tunneling characteristics of bilayer graphene on silicon carbide using the scanning tunneling microscopy. The high-resolution tunneling spectroscopy reveals an unexpected negative differential resistance…

Current-controlled (also known as "S-type") negative differential resistance (NDR) is of crucial importance to many emerging applications including neuromorphic computing and high-density memristors integration. However, the experimental…

介观与纳米尺度物理 · 物理学 2019-01-23 Miao Wang , Chengyu Wang , Chenchen Wu , Qiao Li , Chen Pan , Cong Wang , Shi-Jun Liang , Feng Miao

Down-scaling device dimensions to the nanometer range raises significant challenges to traditional device design, due to potential current leakage across nanoscale dimensions and the need to maintain reproducibility while dealing with…

介观与纳米尺度物理 · 物理学 2019-01-03 Zhongcan Xiao , Chuanxu Ma , Jingsong Huang , Liangbo Liang , Wenchang Lu , Kunlun Hong , Bobby G. Sumpter , An-Ping Li , J. Bernholc

We theoretically investigate negative differential resistance (NDR) of massless and massive Dirac Fermions in double barrier resonant tunneling diodes based on sufficiently short and wide graphene strips. The current-voltage characteristics…

介观与纳米尺度物理 · 物理学 2013-03-12 Yu Song , Han-Chun Wu , Yong Guo

Negative differential resistance (NDR) is tuned at junctions of electronically different dimer and trimer of Rose Bengal on an atomic flat gold (111) surface. Isolated molecule did not show any NDR. But it was induced to show double NDR…

介观与纳米尺度物理 · 物理学 2015-06-25 Anirban Bandyopadhyay , Y. Wakayama

A decrease in current with increasing voltage, often referred to as negative differential resistance (NDR), has been observed in many electronic devices and can usually be understood within a one-electron picture. However, NDR has recently…

介观与纳米尺度物理 · 物理学 2009-11-13 Bhaskaran Muralidharan , Supriyo Datta

Reaction currents in chemical networks usually increase when increasing their driving affinities. But far from equilibrium the opposite can also happen. We find that such negative differential response (NDR) occurs in reaction schemes of…

统计力学 · 物理学 2019-07-24 Gianmaria Falasco , Tommaso Cossetto , Emanuele Penocchio , Massimiliano Esposito

A negative differential resistance (NDR) in the nanotransport is often ascribed to electron correlations. We present a simple example which demonstrates that finite electrode bandwidths and energy dependent electrode density of states are…

介观与纳米尺度物理 · 物理学 2010-05-12 Ioan Baldea , Horst Koppel

Using self-consistent calculations based on Non-Equilibrium Green's Function (NEGF) formalism, the origin of negative differential resistance (NDR) in molecular junctions and quantum wires is investigated. Coupling of the molecule to…

介观与纳米尺度物理 · 物理学 2008-08-21 Hosein Cheraghchi , Keivan Esfarjani

Low-temperature scanning tunneling microscopy and spectroscopy are employed to investigate electron tunneling from a C60-terminated tip into a Cu(111) surface. Tunneling between a C60 orbital and the Shockley surface states of copper is…

介观与纳米尺度物理 · 物理学 2011-12-09 B. W. Heinrich , M. V. Rastei , D. -J. Choi , T. Frederiksen , L. Limot

We have studied the transport properties of a molecular device composed of donor and acceptor moieties between two electrodes on either side. The device is considered to be one-dimensional with different on-site energies and the…

介观与纳米尺度物理 · 物理学 2016-08-31 S. Lakshmi , Swapan K. Pati

A negative differential resistance (NDR) in a one-dimensional band insulator attached to electrodes is investigated. We systematically examine the effects of an electrode bandwidth and a potential distribution inside the insulator on…

强关联电子 · 物理学 2014-11-12 Yasuhiro Tanaka , Kenji Yonemitsu

We unravel the critical role of vibrational mode softening in single-molecule electronic devices at high bias. Our theoretical analysis is carried out with a minimal model for molecular junctions, with mode softening arising due to…

介观与纳米尺度物理 · 物理学 2020-08-18 Junjie Liu , Dvira Segal
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