相关论文: Anomalous Hall effect in field-effect structures o…
Hall effects are investigated for three-dimensional Dirac electrons as a model of bismuth alloys. It is found that there is unconventional contributions to the Hall conductivity $\sigma_{xy}$ generated by the interband effects of a magnetic…
We study the ac anomalous Hall conductivity $\sigma_{xy}(\omega)$ of a Weyl semimetal with broken time-reversal symmetry. Even in the absence of free carriers these materials exhibit a "universal" anomalous Hall response determined solely…
We show that the quantum anomalous Hall effect almost always occurs in magnetic topological insulator thin films whenever the top and bottom surface layer magnetizations are parallel, independent of the interior layer magnetization…
Recently, this long-sought quantum anomalous Hall effect was realized in the magnetic topological insulator. However, the requirement of an extremely low temperature (approximately 30 mK) hinders realistic applications. Based on…
Short-range electron-electron interactions are incorporated into the network model of the integer quantum Hall effect. In the presence of interactions, the electrons, propagating along one link, experience exchange scattering off the…
Investigating the off-diagonal components of the conductivity and thermoelectric tensor of materials hosting complex antiferromagnetic structures has become a viable method to reveal the effects of topology and chirality on the electronic…
Despite being known for a long time the anomalous Hall effect still attracts attention because of its complex origins, its connection to topology and because it serves as a useful probe of the magnetic order. Here we study the anomalous…
The quantum anomalous Hall effect (QAHE) is a topological state of matter with a quantized Hall resistance. It has been observed in some two-dimensional insulating materials such as magnetic topological insulator films and twisted bilayer…
The anomalous Hall effect is investigated for ferromagnetic Fe3Sn2 single crystal with geometrically frustrated kagome bilayer of Fe. The scaling behavior between anomalous Hall resistivity rho_{xy}^{A} and longitudinal resistivity rho_{xx}…
We present a microscopic theory of the anomalous Hall effect in metallic multi-band ferromagnets, which accounts for all scattering-independent contributions, i.e., both the intrinsic and the so-called side jump. For a model of Gaussian…
A comparative study of anomalous-Hall current injection and anisotropic current injection (through planar Hall effect) are studied in Hall devices contacted to a lateral load circuit. Hall currents are injected into the load circuit from…
The anomalous Hall effect is deemed to be a unique transport property of ferromagnetic metals, caused by the concerted action of spin polarization and spin-orbit coupling. Nevertheless, recent experiments have shown that the effect also…
Anomalous Hall effect studies on ultrathin Si(50Angstrom)/Fe(t_Fe) bilayers were performed at 300 K. Giant enhancements of about 60 times in saturation anomalous Hall resistivity and 265 times in anomalous Hall coefficient (R_s) were…
By studying the Hall effect in a series of low resistivity Ga1-xMnxAs samples, accurate values for the hole density p, Mn concentration x, and Curie temperature Tc are obtained over the range 0.015=<x=<0.08. The hole density corresponds to…
The external field control of antiferromagnetism is a significant subject both for basic science and technological applications. As a useful macroscopic response to detect magnetic states, the anomalous Hall effect (AHE) is known for…
We report a nearly ideal quantum anomalous Hall effect in a three-dimensional topological insulator thin film with ferromagnetic doping. Near zero applied magnetic field we measure exact quantization in Hall resistance to within a part per…
Quantum anomalous Hall state is expected to emerge in Dirac electron systems such as graphene under both sufficiently strong exchange and spin-orbit interactions. In pristine graphene, neither interaction exists; however, both interactions…
The quantum anomalous Hall effect refers to the quantization of Hall effect in the absence of applied magnetic field. The quantum anomalous Hall effect is of topological nature and well suited for field-free resistance metrology and…
Topological insulators lacking time-reversal symmetry can exhibit the quantum anomalous Hall effect. Odd-layer thick MnBi$_2$Te$_4$ is a promising platform due to its intrinsic magnetic nature, however, quantization is rarely observed in…
We report the observation of TEMPERATURE-INDUCED transitions between insulator, metal, and quantum-Hall behaviors for transport coefficients in the very dilute high mobility two-dimensional electron system in silicon. We consider the…