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相关论文: Memristive Systems Analysis of 3-Terminal Devices

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The dynamics of memristive device in response to neuron-like signals and coupling electronic neurons via memristive device has been investigated theoretically and experimentally. The simplest experimental system consists of electronic…

Memristive devices are commonly benchmarked by the multi-level programmability of their resistance states. Neural networks utilizing memristor crossbar arrays as synaptic layers largely rely on this feature. However, the dynamical…

Neuromorphic devices, with their distinct advantages in energy efficiency and parallel processing, are pivotal in advancing artificial intelligence applications. Among these devices, memristive transistors have attracted significant…

应用物理 · 物理学 2024-11-08 Shengbo Wang , Jingfang Pei , Cong Li , Xuemeng Li , Li Tao , Arokia Nathan , Guohua Hu , Shuo Gao

A dynamic systems model is proposed describing memory resistors which include a filament conductive bridge. In this model the system state is defined by both a dynamic tunneling barrier (associated with the filament-electrode gap) and a…

介观与纳米尺度物理 · 物理学 2011-06-28 Blaise Mouttet

We suggest electronic circuits with memristors (resistors with memory) that operate as memcapacitors (capacitors with memory) and meminductors (inductors with memory). Using a memristor emulator, the suggested circuits have been built and…

仪器与探测器 · 物理学 2014-11-20 Yuriy V. Pershin , Massimiliano Di Ventra

The massive parallel approach of neuromorphic circuits leads to effective methods for solving complex problems. It has turned out that resistive switching devices with a continuous resistance range are potential candidates for such…

In 2008, researchers at HP Labs published a paper in {\it Nature} reporting the realisation of a new basic circuit element that completes the missing link between charge and flux-linkage, which was postulated by Leon Chua in 1971. The HP…

介观与纳米尺度物理 · 物理学 2015-05-18 O. Kavehei , A. Iqbal , Y. S. Kim , K. Eshraghian , S. F. Al-Sarawi , D. Abbott

In this paper, we present the numerical analysis and simulations of a multi-dimensional memristive device model. Memristive devices and memtransistors based on two-dimensional (2D) materials have demonstrated promising potential for…

We extend the notion of memristive systems to capacitive and inductive elements, namely capacitors and inductors whose properties depend on the state and history of the system. All these elements show pinched hysteretic loops in the two…

介观与纳米尺度物理 · 物理学 2009-11-21 Massimiliano Di Ventra , Yuriy V. Pershin , Leon O. Chua

Neuromorphic architectures offer great promise for achieving computation capacities beyond conventional Von Neumann machines. The essential elements for achieving this vision are highly scalable synaptic mimics that do not undermine…

新兴技术 · 计算机科学 2015-07-09 Radu Berdan , Eleni Vasilaki , Ali Khiat , Giacomo Indiveri , Alexandru Serb , Themistoklis Prodromakis

Memristive circuit elements constitute a cornerstone for novel electronic applications, such as neuromorphic computing, called to revolutionize information technologies. By definition, memristors are sensitive to the history of electrical…

Memristive devices represent a promising technology for building neuromorphic electronic systems. In addition to their compactness and non-volatility features, they are characterized by computationally relevant physical properties, such as…

新兴技术 · 计算机科学 2018-07-18 Melika Payvand , Manu V Nair , Lorenz K. Muller , Giacomo Indiveri

An analysis of the literature shows that there are two types of non-memristive models that have been widely used in the modeling of so-called "memristive" neural networks. Here, we demonstrate that such models have nothing in common with…

神经与进化计算 · 计算机科学 2019-09-18 Y. V. Pershin , M. Di Ventra

The memristor, the recently discovered fundamental circuit element, is of great interest for neuromorphic computing, nonlinear electronics and computer memory. It is usually modelled either using Chua's equations, which lack material device…

材料科学 · 物理学 2014-04-23 Ella Gale

Memristors are an electronic device whose resistance depends on the voltage history that has been applied to its two terminals. Despite its clear advantage as a computational element, a suitable transport model is lacking for the special…

新兴技术 · 计算机科学 2022-10-05 T. F. Tiotto , A. S. Goossens , A. E. Dima , C. Yakopcic , T. Banerjee , J. P. Borst , N. A. Taatgen

Several devices exhibiting memory effects have shown up in nonlinear circuit theory in recent years. Among others, these circuit elements include Chua's memristors, as well as memcapacitors and meminductors. These and other related devices…

动力系统 · 数学 2013-07-09 Ricardo Riaza

A memristor, a two-terminal nanodevice, has garnered substantial attention in recent years due to its distinctive properties and versatile applications. These nanoscale components, characterized by their simplicity of manufacture,…

应用物理 · 物理学 2025-02-20 Nikolaos Vasileiadis , Georgios Ch Sirakoulis , Panagiotis Dimitrakis

A generalized approach for the implementation of memristive two-terminal circuits with piesewise-smooth characteristics is proposed on the example of a multifunctional circuit based on a transistor switch. Two versions of the circuit are…

适应与自组织系统 · 物理学 2022-10-06 Vladimir V. Semenov

Memristor has been identified as the fourth fundamental circuit element by Dr. Leon Chua in 1971 and since then it has gathered a lot of interest because of its non-volatility and are considered as a viable solution to the beyond CMOS era…

系统与控制 · 电气工程与系统科学 2024-09-06 Prashant Gupta , Priscilla Jennifer

The prediction made by L. O. Chua 45+ years ago (see: IEEE Trans. Circuit Theory (1971) 18:507-519 and also: Proc. IEEE (2012) 100:1920-1927) about the existence of a passive circuit element (called memristor) that links the charge and flux…

新兴技术 · 计算机科学 2017-03-14 Wieslaw Marszalek , Zdzislaw Trzaska