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相关论文: Memristive Systems Analysis of 3-Terminal Devices

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Construction and training principles have been proposed and tested for an artificial neural network based on metal-oxide thin-film nanostructures possessing bipolar resistive switching (memristive) effect. Experimental electronic circuit of…

Reconfigurable memristors featuring neural and synaptic functions hold great potential for neuromorphic circuits by simplifying system architecture, cutting power consumption, and boosting computational efficiency. Their additive…

In this paper, we review the different memristive threshold logic (MTL) circuits that are inspired from the synaptic action of flow of neurotransmitters in the biological brain. Brain like generalisation ability and area minimisation of…

新兴技术 · 计算机科学 2016-04-26 Akshay Kumar Maan , Deepthi Anirudhan Jayadevi , Alex Pappachen James

Memristive systems emerge as strong candidates for the implementation of Resistive Random Access Memories (RRAM) and neuromorphic computing devices, as they can mimic the electrical analog behavior or biological synapses. In addition,…

We report a memristive switching effect in the Pt/CuOx/Si/Pt devices prepared by rf sputtering technique at room temperature. Different from other Cu-based switching systems, the devices show a non-filamentary switching effect. A gradual…

材料科学 · 物理学 2013-07-23 L. L. Wei , D. S. Shang , J. R. Sun , S. B. Lee , Z. G. Sun , B. G. Shen

A complete and harmonized fundamental circuit relational graph with four linear and four memory elements is constructed based on newly defined elements, which provides a guide to developing novel circuit functionalities in the future. In…

介观与纳米尺度物理 · 物理学 2015-08-18 Dashan Shang , Yisheng Chai , Zexian Cao , Jun Lu , Young Sun

In this paper, we show that the dynamics of a wide variety of nonlinear systems such as engineering, physical, chemical, biological, and ecological systems, can be simulated or modeled by the dynamics of memristor circuits. It has the…

混沌动力学 · 物理学 2019-02-22 Makoto Itoh

We introduce an approach based on the Chapman-Kolmogorov equation to model heterogeneous stochastic circuits, namely, the circuits combining binary or multi-state stochastic memristive devices and continuum reactive components (capacitors…

新兴技术 · 计算机科学 2023-10-03 V. A. Slipko , Y. V. Pershin

Nanoscale metal oxide memristors have potential in the development of brain-inspired computing systems that are scalable and efficient1-3. In such systems, memristors represent the native electronic analogues of the biological synapses.…

介观与纳米尺度物理 · 物理学 2016-12-21 Cheng-Chih Hsieh , Anupam Roy , Yao-Feng Chang , Davood Shahrjerdi , Sanjay K. Banerjee

Emerging non-volatile memories (NVMs) have currently attracted great interest for their potential applications in advanced low-power information storage and processing technologies. Conventional NVMs, such as magnetic random access memory…

Acting as artificial synapses, two-terminal memristive devices are considered fundamental building blocks for the realization of artificial neural networks. Organized into large arrays with a top-down approach, memristive devices in…

Neuromorphic computing has emerged as a promising avenue towards building the next generation of intelligent computing systems. It has been proposed that memristive devices, which exhibit history-dependent conductivity modulation, could…

The development of neuromorphic systems based on memristive elements - resistors with memory - requires a fundamental understanding of their collective dynamics when organized in networks. Here, we study an experimentally inspired model of…

统计力学 · 物理学 2017-01-18 Forrest C. Sheldon , Massimiliano Di Ventra

Interface-type resistive switching (RS) devices with lower operation current and more reliable switching repeatability exhibits great potential in the applications for data storage devices and ultra-low-energy computing. However, the…

Using memristive properties common for the titanium dioxide thin film devices, we designed a simple write algorithm to tune device conductance at a specific bias point to 1% relative accuracy (which is roughly equivalent to 7-bit precision)…

材料科学 · 物理学 2015-05-30 Fabien Alibart , Ligang Gao , Brian Hoskins , Dmitri Strukov

The classic three-terminal electronic transistors and the emerging two-terminal ion-based memristors are complementary to each other in various nonconventional information processing systems in a heterogeneous integration approach, such as…

应用物理 · 物理学 2023-01-06 Yifei Yang , Lujie Xu , Mingkun Xu , Huan Liu , Dameng Liu , Wenrui Duan , Jing Pei , Huanglong Li

The areal footprint of memristors is a key consideration in material-based neuromorophic computing and large-scale architecture integration. Electronic transport in the most widely investigated memristive devices is mediated by filaments,…

新兴技术 · 计算机科学 2023-01-11 Anouk S. Goossens , Majid Ahmadi , Divyanshu Gupta , Ishitro Bhaduri , Bart J. Kooi , Tamalika Banerjee

Memristive reservoirs draw inspiration from a novel class of neuromorphic hardware known as nanowire networks. These systems display emergent brain-like dynamics, with optimal performance demonstrated at dynamical phase transitions. In…

无序系统与神经网络 · 物理学 2023-06-23 Ruomin Zhu , Jason K. Eshraghian , Zdenka Kuncic

Memory effects are ubiquitous in nature and are particularly relevant at the nanoscale where the dynamical properties of electrons and ions strongly depend on the history of the system, at least within certain time scales. We review here…

介观与纳米尺度物理 · 物理学 2011-03-02 Yuriy V. Pershin , Massimiliano Di Ventra

Redox-based nanoionic resistive memory cells (ReRAMs) are one of the most promising emerging nano-devices for future information technology with applications for memory, logic and neuromorphic computing. Recently, the serendipitous…