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Junctionless oxide-based neuron thin-film transistors with in-plane-gate structure are fabricated at room temperature with a laser scribing process. The neuron transistors are composed of a bottom ITO floating gate and multiples of two…

The attainability of modification of the apparent magnetic anisotropy in (III,Mn)V ferromagnetic semiconductors is probed by means of the finite-elements-based modelling. The most representative case of (Ga,Mn)As and its in-plane uniaxial…

We experimentally demonstrate a proof-of-principle implementation of an almost ideal memristor - a two-terminal circuit element whose resistance is approximately proportional to the integral of the input signal over time. The demonstrated…

Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. As a result, the devices are of potential to use in…

This work represents integration of MTJ with 30nm FinFET for low voltage analog write operations and readout optimization for the p-bit or true random number generator (TRNG), where the induced p-bit, the probabilistic state of the magnetic…

We theoretically investigate quantum transport through single-molecule magnet (SMM) junctions with ferromagnetic and normal-metal leads in the sequential regime. The current obtained by means of the rate-equation gives rise to the tunneling…

Memristive circuit elements constitute a cornerstone for novel electronic applications, such as neuromorphic computing, called to revolutionize information technologies. By definition, memristors are sensitive to the history of electrical…

We show how nanostructuring of a metallic gate on a field-effect transistor (FET) can lead to a macroscopic, robust and voltage controlled quantum state in the electron channel of a FET. A chain of triple quantum dot molecules created by…

Nanometallic devices based on amorphous insulator-metal thin films are developed to provide a novel non-volatile resistance-switching random-access memory (RRAM). In these devices, data recording is controlled by a bipolar voltage, which…

We apply an analysis of time-dependent spin-polarized current in a semiconductor channel at room temperature to establish how the magnetization configuration and dynamics of three ferromagnetic terminals, two of them biased and third…

We study the theoretical model of a ferromagnetic semiconductor as a system of randomly distributed Ising spins with a long-range exchange interaction. Using the density-of-states approach, we analytically obtain the magnetic susceptibility…

A new spin based logic device is proposed. It is comprised of a common free ferromagnetic layer separated by a tunnel junction from three inputs and one output with separate fixed layers. It has the functionality of a majority gate and is…

Electronic transport in ferromagnetic ballistic conductors is predicted to exhibit ballistic anisotropic magnetoresistance (BAMR) - a change in the ballistic conductance with the direction of magnetization. This phenomenon originates from…

Ternary logic system is the most promising and pursued alternate to the prevailing binary logic systems due to the energy efficiency of circuits following reduced circuit complexity and chip area. In this paper, we have proposed a ternary…

Geometrically frustrated magnetic semiconductor $\textrm{CuMnO}_{2}$ has potential applications as photo-catalyst, in photochemical cells and multi-ferroic devices. Electronic band structure in the antiferromagnetic and ferromagnetic phases…

First-principles calculations of electron tunneling transport in Ni and Co break junctions reveal strong dependence of the conductance on the magnetization direction, an effect known as tunneling anisotropic magnetoresistance (TAMR). The…

Rapid development of information technologies originates from the exponential increase in the density of information that can be processed, stored, and transfer by the unit area of relevant devices. There is, however, a growing amount of…

We report multifunctional operation based on the nonlinear dynamics in a single microelectromechanical system (MEMS) resonator. This Letter focuses on a logic-memory device that uses a closed loop control and a nonlinear MEMS resonator in…

Spin-memristors are a class of materials that can store memories through the control of spins, potentially leading to novel technologies that address the constraints of standard silicon electronics, thereby facilitating the advancement of…

The discovery of new mechanisms of controlling magnetic properties by electric fields or currents furthers the fundamental understanding of magnetism and has important implications for practical use. Here, we present a novel approach of…