相关论文: Triple-Mode Single-Transistor Graphene Amplifier a…

Top-gated graphene transistors operating at high frequencies (GHz) have been fabricated and their characteristics analyzed. The measured intrinsic current gain shows an ideal 1/f frequency dependence, indicating an FET-like behavior for…

Double-gated graphene devices provide an important platform for understanding electrical and optical properties of graphene. Here we present transport measurements of single layer, bilayer and trilayer graphene devices with suspended top…

In this article, a few-layered graphene-dielectric multilayer (metamaterial) electro-optic modulator has been proposed in the mid and far infrared range that works on electro-absorption mechanism. Graphene, both mono layer and few layer, is…

The development of flexible electronics operating at radio-frequencies (RF) requires materials that combine excellent electronic performance and the ability to withstand high levels of strain. In this work, we fabricate graphene…

With the further scaling of silicon MOSFETs becoming increasingly harder, the search for an alternative material became crucial. The electron device community found many of the answers in two dimensional materials, especially graphene. With…

This paper provides an overview on graphene solution-gated field effect transistors (SGFETs) and their applications in bioelectronics. The fabrication and characterization of arrays of graphene SGFETs is presented and discussed with respect…

High level of dissipation in normal metals makes challenging development of active and passive plasmonic devices. One possible solution to this problem is to use alternative materials. Graphene is a good candidate for plasmonics in near…

Transistors operating at high frequencies are the basic building blocks of millimeter-wave communication and sensor systems. The high velocity and mobility of carriers in graphene can open way for ultra-fast group IV transistors with…

A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology. Depending on the back gate polarisation, an electron…

We have developed metal-oxide graphene field-effect transistors (MOGFETs) on sapphire substrates working at microwave frequencies. For monolayers, we obtain a transit frequency up to ~ 80 GHz for a gate length of 200 nm, and a power gain…

We propose an analytical device model for a graphene nanoribbon field-effect transistor (GNR-FET). The GNR-FET under consideration is based on a heterostructure which consists of an array of nanoribbons clad between the highly conducting…

Graphene is a unique platform for tunable opto-electronic applications thanks to its linear band dispersion, which allows electrical control of resonant light-matter interactions. Tuning the nonlinear optical response of graphene is…

Ten years have passed since the beginning of graphene research. In this period we have witnessed breakthroughs both in fundamental and applied research. However, the development of graphene devices for mass production has not yet reached…

Graphane is a semiconductor with an energy gap, obtained from hydrogenation of the two-dimensional grapheme sheet. Together with the two-dimensional geometry, unique transport features of graphene, and possibility of doping graphane, p and…

Realization of logic circuits in graphene with an energy gap (EG) remains one of the main challenges for graphene electronics. We found that large transport EGs (>100 meV) can be fulfilled in dual-gated bilayer graphene underneath a simple…

Nano-rippled graphene, a structurally modified graphene, presents a novel material with a large range of possible applications including sensors, electrodes, coatings, optoelectronics, spintronics and straintronics. In this work we have…

We present a circuit-compatible compact model of the intrinsic capacitances of graphene field-effect transistors (GFETs). Together with a compact drain current model, a large-signal model of GFETs is developed combining both models as a…

We study a possible circuit solution to overcome the problem of low voltage gain of short-channel graphene FETs. The circuit consists of a fully differential amplifier with a load made of a cross-coupled transistor pair. Starting from the…

In this work, an analytical model to calculate the channel potential and current-voltage characteristics in a Symmetric tunneling Field-Effect-Transistor (SymFET) is presented. The current in a SymFET flows by tunneling from an n-type…

We experimentally demonstrate DC functionality of graphene-based hot electron transistors, which we call Graphene Base Transistors (GBT). The fabrication scheme is potentially compatible with silicon technology and can be carried out at the…