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相关论文: Graphene Transport at High Carrier Densities using…

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Carrier transport in gated 2D graphene monolayers is theoretically considered in the presence of scattering by random charged impurity centers with density $n_i$. Excellent quantitative agreement is obtained (for carrier density $n >…

介观与纳米尺度物理 · 物理学 2007-10-09 E. H. Hwang , S. Adam , S. Das Sarma

We induce surface carrier densities up to $\sim7\cdot 10^{14}$cm$^{-2}$ in few-layer graphene devices by electric double layer gating with a polymeric electrolyte. In 3-, 4- and 5-layer graphene below 20-30K we observe a logarithmic upturn…

介观与纳米尺度物理 · 物理学 2018-02-21 R. S. Gonnelli , E. Piatti , A. Sola , M. Tortello , F. Dolcini , S. Galasso , J. R. Nair , C. Gerbaldi , E. Cappelluti , M. Bruna , A. C. Ferrari

We evaluate the degree of disorder in electrolyte gating devices through the transport measurements in graphene. By comparing the mobility in ion- and standard metal-gated devices, we show that the deposition of the ionic liquid introduces…

介观与纳米尺度物理 · 物理学 2016-06-22 Andrew Browning , Norio Kumada , Yoshiaki Sekine , Hiroshi Irie , Koji Muraki , Hideki Yamamoto

We present a comparative study of high carrier density transport in mono-, bi-, and trilayer graphene using electric-double-layer transistors to continuously tune the carrier density up to values exceeding 10^{14} cm^{-2}. Whereas in…

介观与纳米尺度物理 · 物理学 2016-07-13 J. T. Ye , M. F. Craciun , M. Koshino , S. Russo , S. Inoue , H. T. Yuan , H. Shimotani , A. F. Morpurgo , Y. Iwasa

We report on the temperature dependent electron transport in graphene at different carrier densities $n$. Employing an electrolytic gate, we demonstrate that $n$ can be adjusted up to 4$\times10^{14}$cm$^{-2}$ for both electrons and holes.…

介观与纳米尺度物理 · 物理学 2010-12-14 Dmitri K. Efetov , Philip Kim

We report a multiband transport study of bilayer graphene at high carrier densities. Employing a poly(ethylene)oxide-CsClO$_4$ solid polymer electrolyte gate we demonstrate the filling of the high energy subbands in bilayer graphene samples…

介观与纳米尺度物理 · 物理学 2015-05-28 Dmitri K. Efetov , Patrick Maher , Simas Glinskis , Philip Kim

We have developed a technique to tune the carrier density in graphene using a lithium-ion-based solid electrolyte. We demonstrate that the solid electrolyte can be used as both a substrate to support graphene and a back gate.It can induce a…

材料科学 · 物理学 2016-10-25 Jialin Zhao , Meng Wang , Hui Li , Xuefu Zhang , Lixing You , Shan Qiao , Bo Gao , Xiaoming Xie , Mianheng Jiang

The temperature dependence of electric transport properties of single-layer and few-layer graphene at large charge doping is of great interest both for the study of the scattering processes dominating the conductivity at different…

介观与纳米尺度物理 · 物理学 2016-09-02 R. S. Gonnelli , F. Paolucci , E. Piatti , Kanudha Sharda , A. Sola , M. Tortello , Jijeesh R. Nair , C. Gerbaldi , M. Bruna , S. Borini

We fabricate electric double-layer field-effect transistor (EDL-FET) devices on mechanically exfoliated few-layer graphene. We exploit the large capacitance of a polymeric electrolyte to study the transport properties of three, four and…

介观与纳米尺度物理 · 物理学 2017-01-11 E. Piatti , S. Galasso , M. Tortello , J. R. Nair , C. Gerbaldi , D. Daghero , M. Bruna , S. Borini , R. S. Gonnelli

We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature. Our…

介观与纳米尺度物理 · 物理学 2008-01-07 S. V. Morozov , K. S. Novoselov , M. I. Katsnelson , F. Schedin , D. C. Elias , J. A. Jaszczak , A. K. Geim

We have achieved mobilities in excess of 200,000 cm^2/Vs at electron densities of ~2*10^11 cm^-2 by suspending single layer graphene. Suspension ~150 nm above a Si/SiO_2 gate electrode and electrical contacts to the graphene was achieved by…

介观与纳米尺度物理 · 物理学 2009-11-13 K. I. Bolotin , K. J. Sikes , Z. Jiang , M. Klima , G. Fudenberg , J. Hone , P. Kim , H. L. Stormer

The recent observation of fractional quantum Hall effect in high mobility suspended graphene devices introduced a new direction in graphene physics, the field of electron-electron interaction dynamics. However, the technique used currently…

介观与纳米尺度物理 · 物理学 2011-05-05 N. Tombros , A. Veligura , J. Junesch , J. J. van den Berg , P. J. Zomer , M. Wojtaszek , I. J. Vera-Marun , H. T. Jonkman , B. J. van Wees

We fabricated graphene pnp devices, by embedding pre-defined local gates in an oxidized surface layer of a silicon substrate. With neither dielectric-material deposition nor electron-beam irradiation on the graphene, we obtained…

介观与纳米尺度物理 · 物理学 2015-05-30 Seung-Geol Nam , Dong-Keun Ki , Jong Wan Park , Youngwook Kim , Jun Sung Kim , Hu-Jong Lee

The conductivity of graphene samples with various levels of disorder is investigated for a set of specimens with mobility in the range of $1-20\times10^3$ cm$^2$/V sec. Comparing the experimental data with the theoretical transport…

介观与纳米尺度物理 · 物理学 2008-01-02 Y. -W. Tan , Y. Zhang , K. Bolotin , Y. Zhao , S. Adam , E. H. Hwang , S. Das Sarma , H. L. Stormer , P. Kim

The peculiar nature of electron scattering in graphene is among many exciting theoretical predictions for the physical properties of this material. To investigate electron scattering properties in a graphene plane, we have created a…

介观与纳米尺度物理 · 物理学 2007-06-19 B. Huard , J. A. Sulpizio , N. Stander , K. Todd , B. Yang , D. Goldhaber-Gordon

We consider hydrodynamic electron transport in the Hall-bar geometry. The theory is developed for systems with non-Galilean-invariant electron liquids. We show that inhomogeneity of the electron density induced by long-range disorder and…

介观与纳米尺度物理 · 物理学 2022-04-27 Songci Li , A. V. Andreev , Alex Levchenko

The carrier density and temperature dependence of the Hall mobility in mono-, bi- and tri-layer graphene has been systematically studied. We found that as the carrier density increases, the mobility decreases for mono-layer graphene, while…

介观与纳米尺度物理 · 物理学 2015-05-13 Wenjuan Zhu , Vasili Perebeinos , Marcus Freitag , Phaedon Avouris

We study ballistic transport in periodically gated bilayer graphene as a candidate for a 2D electronic metamaterial. Our calculations use the equilibrium Green function formalism and take into account quantum corrections to charge density…

介观与纳米尺度物理 · 物理学 2020-03-18 Xianqing Lin , David Tomanek

Graphene grown by chemical vapor deposition and supported on SiO2 and sapphire substrates was studied following controlled introduction of defects induced by 35 keV carbon ion irradiation. Changes in Raman spectra following fluences ranging…

We develop a theory for density, disorder, and temperature dependent electrical conductivity of bilayer graphene in the presence of long-range charged impurity scattering as well as an additional short-range disorder of independent origin,…

介观与纳米尺度物理 · 物理学 2010-04-21 S. Das Sarma , E. H. Hwang , E. Rossi
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