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We theoretically calculate the phonon scattering limited electron mobility in extrinsic (i.e. gated or doped with a tunable and finite carrier density) 2D graphene layers as a function of temperature $(T)$ and carrier density $(n)$. We find…

介观与纳米尺度物理 · 物理学 2008-05-12 E. H. Hwang , S. Das Sarma

The effect of electron-phonon scattering processes over the thermoelectric properties of extrinsic graphene was studied. Electrical and thermal resistivity, as well as the thermopower, were calculated within the Bloch theory approximations.…

介观与纳米尺度物理 · 物理学 2012-08-02 Enrique Muñoz

We present a first-principles study of the temperature- and density-dependent intrinsic electrical resistivity of graphene. We use density-functional theory and density-functional perturbation theory together with very accurate Wannier…

The temperature dependence of electric transport properties of single-layer and few-layer graphene at large charge doping is of great interest both for the study of the scattering processes dominating the conductivity at different…

介观与纳米尺度物理 · 物理学 2016-09-02 R. S. Gonnelli , F. Paolucci , E. Piatti , Kanudha Sharda , A. Sola , M. Tortello , Jijeesh R. Nair , C. Gerbaldi , M. Bruna , S. Borini

We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature. Our…

介观与纳米尺度物理 · 物理学 2008-01-07 S. V. Morozov , K. S. Novoselov , M. I. Katsnelson , F. Schedin , D. C. Elias , J. A. Jaszczak , A. K. Geim

Twisted bilayer graphene (tBLG) has recently emerged as a platform for hosting correlated phenomena, owing to the exceptionally flat band dispersion that results near interlayer twist angle $\theta\approx1.1^\circ$. At low temperature a…

强关联电子 · 物理学 2019-10-03 H. Polshyn , M. Yankowitz , S. Chen , Y. Zhang , K. Watanabe , T. Taniguchi , C. R. Dean , A. F. Young

We have surveyed the in-plane transport properties of the graphene twist bilayer using (i) a low-energy effective Hamiltonian for the underlying electronic structure, (ii) an isotropic elastic phonon model, and (iii) the linear Boltzmann…

介观与纳米尺度物理 · 物理学 2016-12-21 N. Ray , M. Fleischmann , D. Weckbecker , S. Sharma , O. Pankratov , S. Shallcross

The temperature dependence of the mobility in suspended graphene samples is investigated. In clean samples, flexural phonons become the leading scattering mechanism at temperature $T \gtrsim 10\,\,$K, and the resistivity increases…

Declining the lattice thermal conductivity in graphene is essential for its thermoelectric applications. In high electron density systems, scatterings of phonons by electrons are no less than the phonon scatterings by other phonons. With…

材料科学 · 物理学 2019-08-08 Ajit Jena , Wu Li

Interaction between electron and acoustic phonon in an in-plane magnetic field induced gapped quantum wire with Rashba spin-orbit interaction is studied. We calculate acoustic phonon limited resistivity ($\rho$) and phonon-drag thermopower…

介观与纳米尺度物理 · 物理学 2015-01-07 Tutul Biswas , Tarun Kanti Ghosh

We present thermal measurements of large area (over $1,000$~$\mu$m$^2$) monolayer graphene samples at cryogenic temperatures to study the electron-phonon thermal conductivity of graphene. By using two large samples with areas which differ…

介观与纳米尺度物理 · 物理学 2016-02-10 Christopher B. McKitterick , Michael J. Rooks , Daniel E. Prober

One of the salient features of graphene is the very high carrier mobility that implies tremendous potential for use in electronic devices. Unfortunately, transport measurements find the expected high mobility only in freely suspended…

介观与纳米尺度物理 · 物理学 2015-06-04 Søren Ulstrup , Marco Bianchi , Richard Hatch , Dandan Guan , Alessandro Baraldi , Dario Alfè , Liv Hornekær , Philip Hofmann

The weak temperature dependence of the resistance R(T) of monolayer graphene1-3 indicates an extraordinarily high intrinsic mobility of the charge carriers. Important complications are the presence of mobile scattering centres that strongly…

材料科学 · 物理学 2010-01-18 Viera Skakalova , Alan B. Kaiser , Jai Seung Yoo , Dirk Obergfell , Siegmar Roth

We theoretically study the inelastic scattering rate and the carrier mean free path for energetic hot electrons in graphene, including both electron-electron and electron-phonon interactions. Taking account of optical phonon emission and…

介观与纳米尺度物理 · 物理学 2009-11-13 Wang-Kong Tse , E. H. Hwang , S. Das Sarma

The resistivity of ultra-clean suspended graphene is strongly temperature dependent for 5K<T<240K. At T~5K transport is near-ballistic in a device of ~2um dimension and a mobility ~170,000 cm^2/Vs. At large carrier density, n>0.5*10^11…

介观与纳米尺度物理 · 物理学 2009-11-13 K. I. Bolotin , K. J. Sikes , J. Hone , H. L. Stormer , P. Kim

We introduce a different perspective describing electron-phonon interactions in graphene based on curved space hydrodynamics. Interactions of phonons with charge carriers increase the electrical resistivity of the material. Our approach…

材料科学 · 物理学 2017-02-15 Ilario Giordanelli , Miller Mendoza , Hans Herrmann

We predict that graphene is a unique system where disorder-assisted scattering (supercollisions) dominates electron-lattice cooling over a wide range of temperatures, up to room temperature. This is so because for momentum-conserving…

介观与纳米尺度物理 · 物理学 2012-09-21 Justin C. W. Song , Michael Y. Reizer , Leonid S. Levitov

The linear dispersion relation in graphene[1,2] gives rise to a surprising prediction: the resistivity due to isotropic scatterers (e.g. white-noise disorder[3] or phonons[4-8]) is independent of carrier density n. Here we show that…

材料科学 · 物理学 2008-04-14 J. H. Chen , C. Jang , S. Xiao , M. Ishigami , M. S. Fuhrer

The resistivity of gated graphene is studied taking into account electron and hole scattering by short- and long-range structural imperfections the characteristics of disorder were taken from the scanning tunneling microscopy data and by…

材料科学 · 物理学 2007-12-29 F. T. Vasko , V. Ryzhii

We investigate decoherence of an electron in graphene caused by electron-flexural phonon interaction. We find out that flexural phonons can produce dephasing rate comparable to the electron-electron one. The problem appears to be quite…

介观与纳米尺度物理 · 物理学 2015-05-20 Konstantin S. Tikhonov , Wei L. Z. Zhao , Alexander M. Finkel'stein
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