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相关论文: Shubnikov-de Haas oscillations in SrTiO3\LaAlO3 in…

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The electronic transport properties of a series of LaAlO_3 / SrTiO_3 interfaces were investigated, and a systematic thickness dependence of the sheet resistance and magnetoresistance was found for constant growth conditions. This trend…

强关联电子 · 物理学 2015-05-13 C. Bell , S. Harashima , Y. Hikita , H. Y. Hwang

The conducting gas that forms at the interface between LaAlO$_3$ and SrTiO$_3$ has proven to be a fertile playground for a wide variety of physical phenomena. The bulk of previous research has focused on the (001) and (110) crystal…

强关联电子 · 物理学 2017-01-25 Samuel Davis , V. Chandrasekhar , Z. Huang , K. Han , Ariando , T. Venkatesan

The confinement of the two dimensional electron gas (2DEG), preferential occupancy of the Ti 3d orbital and strong spin-orbit coupling at the LaAlO$_3$/SrTiO$_3$ interface play a significant role in its emerging properties. Here we report a…

强关联电子 · 物理学 2013-05-17 A. Annadi , Z. Huang , K. Gopinadhan , X. Renshaw Wang , A. Srivastava , Z. Q. Liu , H. Ma , T. Sarkar , T. Venkatesan , Ariando

We report measurements of the gate-bias dependent band alignment, especially the confining potential profile, at the conducting LaAlO3/SrTiO3 (001) heterointerface using soft and hard x-ray photoemission spectroscopy. Depth-profiling…

材料科学 · 物理学 2014-03-25 M. Minohara , Y. Hikita , C. Bell , H. Inoue , M. Hosoda , H. K. Sato , H. Kumigashira , M. Oshima , E. Ikenaga , H. Y. Hwang

The low-temperature resistance of a conducting LaAlO3/SrTiO3 interface with a 10 nm thick LaAlO3 film decreases by more than 50% after illumination with light of energy higher than the SrTiO3 band-gap. We explain our observations by optical…

Hall effect is an important phenomenon when a magnetic field is applied to materials. From the curve depicting the Hall resistance versus the magnetic field, crucial information such as carrier concentration can be extracted. If the curve…

Using a low-temperature conductive-tip atomic force microscope in cross-section geometry we have characterized the local transport properties of the metallic electron gas that forms at the interface between LaAlO3 and SrTiO3. At low…

In this paper we study LaAlO$_3$/Eu$_{1-x}$La$_x$TiO$_3$/SrTiO$_3$ structures with nominally x = 0, 0.1 and different thicknesses of the Eu$_{1-x}$La$_x$TiO$_3$ layer. We observe that both systems have many properties similar to previously…

强关联电子 · 物理学 2021-09-03 N. Lebedev , Y. Huang , A. Rana , D. Jannis , N. Gauquelin , J. Verbeeck , J. Aarts

The recent realization of epitaxial SrCoO$_3$ thin films has triggered a renewed interest in their electronic, magnetic, and ionic properties. Here we uncover several unusual magneto-transport properties of this compound, suggesting that it…

介观与纳米尺度物理 · 物理学 2018-07-31 Ding Zhang , Hiroaki Ishizuka , Nianpeng Lu , Yujia Wang , Naoto Nagaosa , Pu Yu , Qi-Kun Xue

A number of intriguing properties emerge upon the formation of the epitaxial interface between the insulating oxides LaAlO3 and SrTiO3. These properties, which include a quasi two-dimensional conducting electron gas, low temperature…

材料科学 · 物理学 2010-08-20 Hanghui Chen , Alexie M. Kolpak , Sohrab Ismail-Beigi

The longitudinal resistance $R_{xx}$ of the SrTiO3/LaAlO3 interface with magnetic fields applied perpendicular to the interface has an antisymmetric term (namely, $R_{xx}(H)\neq R_{xx}(-H)$) which increases with decreasing temperature and…

强关联电子 · 物理学 2009-11-17 Snir Seri , Lior Klein

Oxide heterostructures allow for detailed studies of 2D electronic transport phenomena. Herein, different facets of magnetotransport in selected spin-orbit-coupled systems are analyzed and characterized by their single-band and multiband…

介观与纳米尺度物理 · 物理学 2021-10-14 Robert Bartel , Elias Lettl , Patrick Seiler , Thilo Kopp , German Hammerl

We report transport measurements, including: Hall, Seebeck and Nernst Effect. All these transport properties exhibit anomalous field and temperature dependences, with a change of behavior observed at about H 1.5T and T 15K. We were able to…

强关联电子 · 物理学 2012-05-24 S. Lerer , M. Ben-Shalom , G. Deutscher , Y. Dagan

The resistivity as a function of temperature, magnetic field and its orientation for atomically flat SrTiO3\LaAlO3 interfaces with carrier densities of ~3*10^13 cm^-2 is reported. At low magnetic fields superconductivity is observed below…

强关联电子 · 物理学 2010-03-26 M. Ben Shalom , C. W. Tai , Y. Lereah , M. Sachs , E. Levy , D. Rakhmilevitch , A. Palevski , Y. Dagan

We have investigated the transport properties of LaVO_3/SrTiO_3 Mott insulator/band insulator heterointerfaces for various configurations. The (001)-oriented n-type VO_2/LaO/TiO_2 polar discontinuity is conducting, exhibiting a LaVO_3…

强关联电子 · 物理学 2009-11-13 Y. Hotta , T. Susaki , H. Y. Hwang

Using field effect devices with side gates, we modulate the 2 dimensional electron gas hosted at the LaAlO$_3$/SrTiO$_3$ interface to study the temperature and doping evolution of the magnetotransport. The analysis of the data reveals…

介观与纳米尺度物理 · 物理学 2015-03-20 D. Stornaiuolo , S. Gariglio , A. Fête , M. Gabay , D. Li , D. Massarotti , J. -M. Triscone

The resistivity and Hall effect in CeNiSn are measured at temperatures down to 35 mK and in magnetic fields up to 20 T with the current applied along the {\it b} axis. The resistivity at zero field exhibits quadratic temperature dependence…

强关联电子 · 物理学 2009-11-07 T. Terashima , C. Terakura , S. Uji , H. Aoki , Y. Echizen , T. Takabatake

High magnetic field and low temperature transport is carried out in order to characterize the charge carriers of $\text{PtSe}_2$. In particular, the Shubnikov-de Haas oscillations arising at applied magnetic field strengths $\gtrsim…

材料科学 · 物理学 2025-10-31 Julian Max Salchegger , Rajdeep Adhikari , Bogdan Faina , Alberta Bonanni

The magnetotransport of two dimensional holes in a GaAs/AlGaAs heterostructure is studied experimentally and theoretically. Spin-orbit splitting of the heavy hole band is manifested at high carrier densities in two Shubnikov-de Haas…

介观与纳米尺度物理 · 物理学 2007-05-23 Yuval Yaish , Oleg Prus , Evgeny Buchstab , Gidi Ben Yoseph , Uri Sivan , Iddo Ussishkin , Ady Stern

Interplay of spin, charge, orbital and lattice degrees of freedom in oxide heterostructures results in a plethora of fascinating properties, which can be exploited in new generations of electronic devices with enhanced functionalities. The…