Weak-localization and spin-orbit interaction in side-gate field effect devices at the LaAlO$_3$/SrTiO$_3$ interface

D. Stornaiuolo; S. Gariglio; A. Fête; M. Gabay; D. Li; D. Massarotti; J. -M. Triscone

doi:10.1103/PhysRevB.90.235426

Weak-localization and spin-orbit interaction in side-gate field effect devices at the LaAlO$_3$/SrTiO$_3$ interface

Mesoscale and Nanoscale Physics 2015-03-20 v1

Authors: D. Stornaiuolo , S. Gariglio , A. Fête , M. Gabay , D. Li , D. Massarotti , J. -M. Triscone

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Abstract

Using field effect devices with side gates, we modulate the 2 dimensional electron gas hosted at the LaAlO $_3$ /SrTiO $_3$ interface to study the temperature and doping evolution of the magnetotransport. The analysis of the data reveals different transport regimes depending on the interplay between the different (elastic, inelastic, and spin-orbit) scattering times and their temperature dependencies. We find that the spin-orbit interaction strongly affects the low temperature transport in the normal state in a very large region of the phase diagram, extending beyond the superconducting dome.

Keywords

oxide heterostructures magnetic materials and spin systems doped magnetic materials

Cite

@article{arxiv.1503.05730,
  title  = {Weak-localization and spin-orbit interaction in side-gate field effect devices at the LaAlO$_3$/SrTiO$_3$ interface},
  author = {D. Stornaiuolo and S. Gariglio and A. Fête and M. Gabay and D. Li and D. Massarotti and J. -M. Triscone},
  journal= {arXiv preprint arXiv:1503.05730},
  year   = {2015}
}

Weak-localization and spin-orbit interaction in side-gate field effect devices at the LaAlO$_3$/SrTiO$_3$ interface

Abstract

Keywords

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