\delta-doped LaAlO3-SrTiO3 interface: Electrical transport and characterization of the interface potential

A. Rastogi; S. Tiwari; J. J. Pulikkotil; Z. Hossain; D. Kumar; R. C. Budhani

doi:10.1209/0295-5075/106/57002

\delta-doped LaAlO3-SrTiO3 interface: Electrical transport and characterization of the interface potential

Strongly Correlated Electrons 2014-07-04 v2 Materials Science

Authors: A. Rastogi , S. Tiwari , J. J. Pulikkotil , Z. Hossain , D. Kumar , R. C. Budhani

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Abstract

Here we investigate LaAlO_3-SrTiO_3 heterostructure with\delta-doping of the interface by LaMnO_3 at less than one monolayer. This doping strongly inhibits the formation of mobile electron layer at the interface. This results in giant increase of the resistance and the thermopower of the heterostructure. Several aspects of this phenomena are investigated. A model to calculate the carrier concentration is presented and effect of doping and detailed temperature dependence is analyzed in terms of model parameters and the weak-scattering theory. The large enhancement of thermopower is attributed to the increased spin and orbital entropy originating from the LaMnO_3 mono-layer.

Keywords

oxide heterostructures oxide interfaces doping in semiconductors

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@article{arxiv.1306.1494,
  title  = {\delta-doped LaAlO3-SrTiO3 interface: Electrical transport and characterization of the interface potential},
  author = {A. Rastogi and S. Tiwari and J. J. Pulikkotil and Z. Hossain and D. Kumar and R. C. Budhani},
  journal= {arXiv preprint arXiv:1306.1494},
  year   = {2014}
}

\delta-doped LaAlO3-SrTiO3 interface: Electrical transport and characterization of the interface potential

Abstract

Keywords

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