Controlling the electronic interface properties of AlO$_x$/SrTiO$_3$ heterostructures

Berengar Leikert; Judith Gabel; Matthias Schmitt; Martin Stübinger; Philipp Scheiderer; Louis Veyrat; Tien-Lin Lee; Michael Sing; Ralph Claessen

doi:10.1103/PhysRevMaterials.5.065003

Controlling the electronic interface properties of AlO$_x$/SrTiO$_3$ heterostructures

Materials Science 2021-06-23 v1

Authors: Berengar Leikert , Judith Gabel , Matthias Schmitt , Martin Stübinger , Philipp Scheiderer , Louis Veyrat , Tien-Lin Lee , Michael Sing , Ralph Claessen

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Abstract

Depositing disordered Al on top of SrTiO $_3$ is a cheap and easy way to create a two-dimensional electron system in the SrTiO $_3$ surface layers. To facilitate future device applications we passivate the heterostructure by a disordered LaAlO $_3$ capping layer to study the electronic properties by complementary x-ray photoemission spectroscopy and transport measurements on the very same samples. We also tune the electronic interface properties by adjusting the oxygen pressure during film growth.

Keywords

alo_x/srtio_3 heterostructure two-dimensional electron system laalo_3 capping x-ray photoemission spectroscopy transport measurements oxygen pressure

Cite

@article{arxiv.2104.06187,
  title  = {Controlling the electronic interface properties of AlO$_x$/SrTiO$_3$ heterostructures},
  author = {Berengar Leikert and Judith Gabel and Matthias Schmitt and Martin Stübinger and Philipp Scheiderer and Louis Veyrat and Tien-Lin Lee and Michael Sing and Ralph Claessen},
  journal= {arXiv preprint arXiv:2104.06187},
  year   = {2021}
}

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9 pages, 5 figures

Controlling the electronic interface properties of AlO$_x$/SrTiO$_3$ heterostructures

Abstract

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