Surface photovoltage (SPV) spectroscopy, which is a versatile method to analyze the energetic distribution of electronic defect states at surfaces and interfaces of wide-bandgap semiconductor (hetero-)structures, is applied to comparatively investigate heterostructures made of 5-unit-cell-thick LaAlO3 films grown either on TiO2- or on SrO-terminated SrTiO3. As shown in a number of experimental and theoretical investigations in the past, these two interfaces exhibit dramatically different properties with the first being conducting and the second insulating. Our present SPV investigation reveals clearly distinguishable interface defect state distributions for both configurations when interpreted within the framework of a classical semiconductor band scheme. Furthermore, bare SrTiO3 crystals with TiO2 or mixed SrO/TiO2 terminations show similar SPV spectra and transients as do LaAlO3-covered samples with the respective termination of the SrTiO3 substrate. This is in accordance with a number of recent works that stress the decisive role of SrTiO3 and the minor role of LaAlO3 with respect to the electronic interface properties.
@article{arxiv.1311.0491,
title = {Conducting and insulating LaAlO$_3$/SrTiO$_3$ interfaces: A comparative surface photovoltage investigation},
author = {Elke Beyreuther and Domenico Paparo and Andreas Thiessen and Stefan Grafström and Lukas M. Eng},
journal= {arXiv preprint arXiv:1311.0491},
year = {2013}
}
Comments
8 pages, 6 figures; supplement not uploaded to arXiv, see ref. [44] for a possible download link; submitted to J. Appl. Phys