Interface structure, band alignment and built-in potentials at LaFeO$_3$/$\textit{n}$-SrTiO$_3$ heterojunctions

Ryan Comes; Scott Chambers

doi:10.1103/PhysRevLett.117.226802

Interface structure, band alignment and built-in potentials at LaFeO$_3$/$\textit{n}$-SrTiO$_3$ heterojunctions

Materials Science 2016-11-28 v1

Authors: Ryan Comes , Scott Chambers

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Abstract

Interface structure at polar/non-polar interfaces has been shown to be a key factor in controlling emergent behavior in oxide heterostructures, including the LaFeO $_3$ / $\textit{n}$ -SrTiO $_3$ system. We demonstrate via high energy resolution x-ray photoemission that epitaxial LaFeO $_3$ / $\textit{n}$ -SrTiO $_3$ (001) heterojunctions engineered to have opposite interface polarities exhibit very similar band offsets and potential gradients within the LaFeO $_3$ films. However, differences in the potential gradient within the SrTiO $_3$ layer depending on polarity may promote hole diffusion into LaFeO $_3$ for applications in photocatalysis.

Keywords

interface structure band alignment built-in potential heterojunction LaFeO$_3$ n-SrTiO$_3$ photocatalysis

Cite

@article{arxiv.1610.08113,
  title  = {Interface structure, band alignment and built-in potentials at LaFeO$_3$/$\textit{n}$-SrTiO$_3$ heterojunctions},
  author = {Ryan Comes and Scott Chambers},
  journal= {arXiv preprint arXiv:1610.08113},
  year   = {2016}
}

Comments

10 pages, 3 figures; supplemental info: 6 pages, 3 figures

Interface structure, band alignment and built-in potentials at LaFeO$_3$/$\textit{n}$-SrTiO$_3$ heterojunctions

Abstract

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