Enhancing the electron mobility via delta-doping in SrTiO3

Y. Kozuka; M. Kim; H. Ohta; Y. Hikita; C. Bell; H. Y. Hwang

doi:10.1063/1.3524198

Enhancing the electron mobility via delta-doping in SrTiO3

Strongly Correlated Electrons 2012-11-14 v1 Other Condensed Matter

Authors: Y. Kozuka , M. Kim , H. Ohta , Y. Hikita , C. Bell , H. Y. Hwang

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Abstract

We fabricated high-mobility {\delta}-doped structures in SrTiO3 thin films in order to investigate the low temperature electronic transport properties of confined carriers in this system. An enhancement of the electron mobility above the bulk value was observed as the doped layer thickness decreased. High-field Hall measurements revealed that this mobility enhancement originates from higher-mobility electrons in the undoped clean regions, which have quantum-mechanically broadened from the doped layer. Because of the absence of apparent lattice misfit between the layers, this structure is highly suitable for investigating two-dimensional electron gases in SrTiO3.

Keywords

doping in semiconductors oxide heterostructures charge carrier mobility

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@article{arxiv.1011.0159,
  title  = {Enhancing the electron mobility via delta-doping in SrTiO3},
  author = {Y. Kozuka and M. Kim and H. Ohta and Y. Hikita and C. Bell and H. Y. Hwang},
  journal= {arXiv preprint arXiv:1011.0159},
  year   = {2012}
}

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14 pages, 4 figures

Enhancing the electron mobility via delta-doping in SrTiO3

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