Dramatic Mobility Enhancements in Doped SrTiO3 Thin Films by Defect Management

Y. Kozuka; Y. Hikita; C. Bell; H. Y. Hwang

doi:10.1063/1.3457994

Dramatic Mobility Enhancements in Doped SrTiO3 Thin Films by Defect Management

Strongly Correlated Electrons 2012-11-14 v1

Authors: Y. Kozuka , Y. Hikita , C. Bell , H. Y. Hwang

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Abstract

We report bulk-quality n-type SrTiO3 (n-SrTiO3) thin films fabricated by pulsed laser deposition, with electron mobility as high as 6600 cm2 V-1 s-1 at 2 K and carrier density as low as 2.0 x 10^18cm-3 (~ 0.02 at. %), far exceeding previous pulsed laser deposition films. This result stems from precise strontium and oxygen vacancy defect chemistry management, providing a general approach for defect control in complex oxide heteroepitaxy.

Keywords

thin films thin film physics epitaxial thin films

Cite

@article{arxiv.1006.1564,
  title  = {Dramatic Mobility Enhancements in Doped SrTiO3 Thin Films by Defect Management},
  author = {Y. Kozuka and Y. Hikita and C. Bell and H. Y. Hwang},
  journal= {arXiv preprint arXiv:1006.1564},
  year   = {2012}
}

Comments

13 pages, 4 figures

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