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相关论文: Theory of Electron Transport near Anderson-Mott Tr…

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The high-temperature superconductivity in copper oxides emerges under strong influence of spin correlations in doped Mott insulators. Recent discoveries of charge-order (CO) correlations in Y-based hole-doped cuprates as well as in…

强关联电子 · 物理学 2018-11-14 Hideki Matsuoka , Masaki Nakano , Masaki Uchida , Masashi Kawasaki , Yoshihiro Iwasa

We investigate the electron transport properties of a model magnetic molecule formed by two magnetic centers whose exchange coupling can be altered with a longitudinal electric field. In general we find a negative differential conductance…

介观与纳米尺度物理 · 物理学 2015-05-13 Sujeet K. Shukla , Stefano Sanvito

Because it is easily switched from insulator to metal either via chemical doping or electrical gating, silicon is at the core of modern information technology and remains a candidate platform for quantum computing. The metal-to-insulator…

We show that in presence of a deformable lattice potential, the nature of the disorder-driven metal-insulator transition (MIT) is fundamentally changed with respect to the non-interacting (Anderson) scenario. For strong disorder, even a…

无序系统与神经网络 · 物理学 2017-01-25 Domenico Di Sante , Simone Fratini , Vladimir Dobrosavljević , Sergio Ciuchi

A fundamental issue of the Mott transition is how electrons behaving as single particles carrying spin and charge in a metal change into those exhibiting separated spin and charge excitations (low-energy spin excitation and high-energy…

强关联电子 · 物理学 2023-09-13 Masanori Kohno

A metal can be driven to an insulating phase through distinct mechanisms. A possible way is via the Coulomb interaction, which then defines the Mott metal-insulator transition (MIT). Another possibility is the MIT driven by disorder, the…

强关联电子 · 物理学 2021-10-04 G. A. Canella , V. V. França

The electron transport in a 1D conductor with an isolated local defect such as an impurity or a non-adiabatic contact is studied theoretically. New regime of conduction in correlated 1D systems is predicted beyond the well-known regime of…

强关联电子 · 物理学 2015-10-01 S. N. Artemenko , P. P. Aseev , D. S. Shapiro , R. R. Vakhitov

We investigate a modified Anderson model at the large-$N$ limit, where Coulomb interaction is replaced by Sachdev-Ye-Kitaev random interaction. The resistivity of conduction electron $\rho_{c}$ has a minimum value around temperature…

强关联电子 · 物理学 2019-05-10 Lan Zhang , Yin Zhong , Hong-Gang Luo

We investigate the zero-temperature metal-insulator transition in a one-dimensional two-component Fermi gas in the presence of a quasi-periodic potential resulting from the superposition of two optical lattices of equal intensity but…

量子气体 · 物理学 2017-01-25 Sebastiano Pilati , Vipin Kerala Varma

We investigate the electronic transport coefficients in unconventional superconductors at low temperatures, where charge and heat transport are dominated by electron scattering from random lattice defects. We discuss the features of the…

超导电性 · 物理学 2011-04-08 Matthias J. Graf

We study the low-temperature transport of a doped two-chain ladder system of interacting fermions in the presence of a barrier or of a low concentration of impurities. Above a certain value of the interaction, the conductance is suppressed,…

强关联电子 · 物理学 2009-10-30 E. Arrigoni , B. Brendel , W. Hanke

We present a new model of electron transport in warm and hot dense plasmas which combines the quantum Landau-Fokker-Planck equation with the concept of mean-force scattering. We obtain electrical and thermal conductivities across several…

等离子体物理 · 物理学 2020-05-27 Nathaniel R. Shaffer , Charles E. Starrett

Ballistic transport of helical edge modes in two-dimensional topological insulators is protected by time-reversal symmetry. Recently it was pointed out [1] that coupling of non-interacting helical electrons to an array of randomly…

介观与纳米尺度物理 · 物理学 2015-12-31 O. M. Yevtushenko , A. Wugalter , V. I. Yudson , B. L. Altshuler

We study the effect of electron-electron interaction on the one-particle density of states (\emph{DOS}) $\rho^{(d)}(\epsilon,T)$ of low-dimensional disordered metals near Fermi energy within the framework of the finite temperature…

强关联电子 · 物理学 2015-05-14 E. Sasioglu , S. Caliskan , M. Kumru

We show that doped Mott insulators exhibit a collective degree of freedom, not made out of the elemental excitations, because the number of single-particle addition states at low energy per electron per spin is greater than one. The…

强关联电子 · 物理学 2008-05-30 Philip Phillips , Ting-Pong Choy , Robert G. Leigh

We consider a strongly interacting quantum dot connected to two leads held at quite different temperatures. Our aim is to study the behavior of the Kondo effect in the presence of large thermal biases. We use three different approaches,…

介观与纳米尺度物理 · 物理学 2017-09-04 Miguel A. Sierra , David Sanchez , Rosa Lopez

We report an unconventional temperature dependence of the resistivity in several strongly correlated systems approaching a localized to itinerant electronic transition from the itinerant electron side. The observed resistivity, proportioanl…

强关联电子 · 物理学 2009-11-10 F. Rivadulla , J. -S. Zhou , J. B. Goodenough

Using different techniques, and Fermi-liquid relationships, we calculate the variation with applied magnetic field (up to second order) of the zero-temperature equilibrium conductance through a quantum dot described by the impurity Anderson…

介观与纳米尺度物理 · 物理学 2015-11-18 I. J. Hamad , C. Gazza , J. A. Andrade , A. A. Aligia , P. Roura-Bas , P. S. Cornaglia

We use quantum kinetic theory to calculate the thermoelectric transport properties of the 2D single band Fermi-Hubbard model in the weak coupling limit. For generic filling, we find that the high-temperature limiting behaviors of the…

量子气体 · 物理学 2021-11-03 Thomas G. Kiely , Erich J. Mueller

The many-body Monte Carlo method is used to evaluate the frequency dependent conductivity and the average mobility of a system of hopping charges, electronic or ionic on a one-dimensional chain or channel of finite length. Two cases are…

材料科学 · 物理学 2009-11-10 Lazaros K. Gallos , Bijan Movaghar , Laurens D. A. Siebbeles