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Extensive theoretical and experimental work has established high-fidelity electron shuttling in Si/SiGe systems, whereas demonstrations in Si/SiO2 (SiMOS) remain at an early stage. To help address this, we perform full 3D simulations of…

Gate tunable p-type multilayer tin mono-sulfide (SnS) field-effect transistor (FET) devices with SnS thickness between 50 and 100 nm were fabricated and studied to understand their performances. The devices showed anisotropic inplane…

Fully Homomorphic Encryption over the Torus (TFHE) allows arbitrary computations to happen directly on ciphertexts using homomorphic logic gates. However, each TFHE gate on state-of-the-art hardware platforms such as GPUs and FPGAs is…

Complementary metal oxide semiconductor technology (CMOS) has been faced critical challenges in nano-scale regime. CNTFET (Carbon Nanotube Field effect transistor) technology is a promising alternative for CMOS technology. In this paper, we…

With the rapid development of economy, the consumption of fossil fuels, and the increasing environment pollution, there is in urgent need of seeking clean and renewable energy sources, as well as highly efficient and low-cost energy storage…

Spin-Orbit Torque (SOT) Magnetic Random-Access Memory (MRAM) devices offer improved power efficiency, nonvolatility, and performance compared to static RAM, making them ideal, for instance, for cache memory applications. Efficient…

Tunnel Field Effect Transistors (TFET) have extremely low leakage current, exhibit excellent subthreshold swing and are less susceptible to short channel effects. However, TFETs do face certain special challenges, particularly with respect…

We introduce a new output amplifier for fully-depleted thick p-channel CCDs based on double-gate MOSFETs. The charge amplifier is an n-type MOSFET specifically designed and operated to couple the fully-depleted CCD with high charge-transfer…

This study simulated negative-capacitance double gate FinFETs with channel lengths ranging from 25nm to 100nm using TCAD. The results show that negative capacitance significantly reduces subthreshold swing as well as drain induced barrier…

We have demonstrated a novel type of superconducting transmon qubit in which a Josephson junction has been engineered to act as its own parallel shunt capacitor. This merged-element transmon (MET) potentially offers a smaller footprint and…

Single-port ferroelectric FET (FeFET) that performs write and read operations on the same electrical gate prevents its wide application in tunable analog electronics and suffers from read disturb, especially to the high-threshold voltage…

Atomically-thin 2D semiconducting materials integrated into van der Waals heterostructures have enabled architectures that hold great promise for next generation nanoelectronics. However, challenges still remain to enable their full…

Low-dimensional materials such as layered semiconductors or carbon nanotubes (CNTs) have been attracting increasing attention in the last decades due to their inherent scaling properties, which become fundamental to sustain the scaling in…

Over the past few years, there has been a growing interest in layered transition metal dichalcogenides (TMD) such as molybdenum disulfide (MoS2). Most studies so far have focused on the electronic and optoelectronic properties of…

We report the first observation of ferroelectric gating in AlScN barrier wide-bandgap nitride transistors. These FerroHEMT devices realized by direct epitaxial growth represent a new class of ferroelectric transistors in which the…

There is an extremely high demand for a high speed, low power, low leakage, and low noise Static Random-Access Memory (SRAM) for high performance cache memories. The energy efficiency of SRAM is of paramount importance in both high…

Organic light-emitting transistors (OLETs) are multifunctional optoelectronic devices that combine in a single structure the advantages of organic light emitting diodes (OLEDs) and organic field-effect transistors (OFETs). However, low…

Complex-valued Transformers have largely inherited softmax attention from real-valued architectures. However, row-normalised token competition is not necessarily aligned with phase-preserving computation. In this paper, we introduce the…

A high threshold voltage enhancement-mode GaN HEMT with p-type doped buffer is discussed and simulated. Analytical expressions are derived to explain the role of buffer capacitance in designing and enhancing threshold voltage. Simulations…

The reliability of power semiconductor switches is important when considering their vital role in power electronic converters for downhole subsea applications. Respect to technology advancements in material sciences, power MOSFETs with wide…