相关论文: Electrical spin injection from an organic-based fe…

We experimentally demonstrate high quality factor spin wave resonances in an encapsulated thin film of the organic-based ferrimagnet vanadium tetracyanoethylene (V[TCNE]$_\textit{x~2}$) coated on an a-plane sapphire substrate by low…

The molecular-based ferrimagnetic insulator V(TCNE)x has gained recent interest for efficient spin-wave excitation due to its low Gilbert damping ratio a=4E-5, and narrow ferromagnetic resonance linewidth f=1Oe. Here we report a clean spin…

We report on the spin-polarized electron injection through an Fe(100)/InAs(100) junction. The circularly polarized electroluminescence of injected electrons from epitaxially grown Fe thin film into InAs(100) in an external magnetic field is…

We have succeeded in growing ferromagnetic metals (Co, Fe, and NiFe)/ Al2O3/ AlGaAs heterostructures with homogeneous and flat interfaces. The electro-luminescence (EL) from the light emitting diode (LED) consisting of the…

Vanadium tetracyanoethylene (V[TCNE]$_\text{x}$) is an organic-based ferrimagnet that exhibits robust magnetic ordering (T$_\text{C}$ of over 600 K), high quality-factor (high-Q) microwave resonance (Q up to 3,500), and compatibility with a…

We report the room-temperature electroluminescence (EL) with nearly pure circular polarization (CP) from GaAs-based spin-polarized light-emitting diodes (spin-LEDs). External magnetic fields are not used during device operation. There are…

The injection of spin polarized electrons from ferromagnetic metals (Fe and Co) into gallium nitride (GaN) via scanning tunneling microscopy (STM) is demonstrated. Electrons from STM tips are injected into the semiconductor. Net circular…

We demonstrate highly efficient spin injection at low and room temperature in an AlGaAs/GaAs semiconductor heterostructure from a CoFe/AlOx tunnel spin injector. We use a double-step oxide deposition for the fabrication of a pinhole-free…

The electrical injection of spin polarized electrons in a semiconductor can be achieved in principle by driving a current from a ferromagnetic metal, where current is known to be significantly spin polarized, into the semiconductor via…

The design of large-scale electronic circuits that are entirely spintronics-driven requires a current source that is highly spin-polarised at and beyond room temperature, cheap to build, efficient at the nanoscale and straightforward to…

We demonstrate experimentally the electrical ballistic electron spin injection from a ferromagnetic metal / tunnel barrier contact into a semiconductor III-V heterostructure. We introduce the Oblique Hanle Effect technique for reliable…

Spin injection using ferromagnetic semiconductors at room temperature is a building block for the realization of spin-functional semiconductor devices. Nevertheless, this has been very challenging due to the lack of reliable…

Magnetic and spin-based technologies for data storage and processing pose unique challenges for information transduction to light because of magnetic metals' optical loss, and the inefficiency and resistivity of semiconductor spin-based…

Alternating layers of granular Iron (Fe) and Titanium dioxide (TiO$_{2-\delta}$) were deposited on (100) Lanthanum aluminate (LaAlO$_3$) substrates in low oxygen chamber pressure using a controlled pulsed laser ablation deposition…

Electroluminescence in organic semiconductors strongly depends on the relative population of excited singlet and triplet excitonic states resulting from recombination of injected carriers. In conventional organic light-emitting diodes…

We present a complete description of spin injection and detection in Fe/Al_xGa_{1-x}As/GaAs heterostructures for temperatures from 2 to 295 K. Measurements of the steady-state spin polarization in the semiconductor indicate three…

In this letter, we show efficient electrical spin injection into a SiGe based \textit{p-i-n} light emitting diode from the remanent state of a perpendicularly magnetized ferromagnetic contact. Electron spin injection is carried out through…

Graphene is a very promising material in spintronics due to both its high electric mobility and low intrinsic spin-obit coupling. Electronic spins can be injected from a ferromagnetic material through a tunnel contact into graphene owing to…

We inject spin-polarized electrons from an Fe/MgO tunnel barrier contact into n-type Ge(001) substrates with electron densities 2e16 < n < 8e17 cm-3, and electrically detect the resulting spin accumulation using three-terminal Hanle…

Electrically-induced electron spin polarization is imaged in n-type ZnSe epilayers using Kerr rotation spectroscopy. Despite no evidence for an electrically-induced internal magnetic field, current-induced in-plane spin polarization is…