Spin-polarized light emitting diode using metal/insulator/semiconductor structures
材料科学
2009-11-07 v1
摘要
We have succeeded in growing ferromagnetic metals (Co, Fe, and NiFe)/ Al2O3/ AlGaAs heterostructures with homogeneous and flat interfaces. The electro-luminescence (EL) from the light emitting diode (LED) consisting of the metal/insulator/semiconductor (MIS) structure depends on the magnetization direction of the ferromagnetic electrode at room temperature. This fact shows that a spin-injection from the ferromagnetic metal to the semiconductor is achieved. The spin-injection efficiency is estimated to be the order of 1 % at room temperature.
引用
@article{arxiv.cond-mat/0202389,
title = {Spin-polarized light emitting diode using metal/insulator/semiconductor structures},
author = {T. Manago and H. Akinaga},
journal= {arXiv preprint arXiv:cond-mat/0202389},
year = {2009}
}
备注
4 pages including 3 figures