相关论文: Vertical Field-Effect Transistor Based on Wavefunc…

Using the fluctuational electrodynamics and nonequilibrium Green's function methods, we demonstrate the existence of a current-induced heat transfer in double-layer graphene even when the temperatures of the two sheets are the same. The…

In this paper we propose a modified structure of TFET incorporating ferroelectric oxide as the complementary gate dielectric operating in negative capacitance zone, called the Negative Capacitance Tunnel FET (NCTFET). The proposed device…

A theory of transport in the quantum Hall regime is developed for separately contacted double-layer electron systems. Inter-layer tunneling provides a channel for equilibration of the distribution functions in the two layers and influences…

In this paper, we propose the application of a Dual Material Gate (DMG) in a Tunnel Field Effect Transistor (TFET) to simultaneously optimize the on-current, the off-current and the threshold voltage, and also improve the average…

Transconductance is a central figure of merit in field-effect transistors, typically governed by charge accumulation and carrier mobility. In multilayer WSe$_2$ transistors, however, it is shown to carry a nonlinear transport signature of…

Spin field effect transistors (SpinFET) are an iconic class of spintronic devices that exploit gate tuned spin-orbit interaction in semiconductor channels interposed between ferromagnetic source and drain contacts to elicit transistor…

We study the optical properties of double-layer graphene for linearly polarized evanescent modes and discuss the in-phase and out-of-phase plasmon modes for both, longitudinal and transverse polarization. We find a energy for which…

The absence of a band gap in graphene restricts its straight forward application as a channel material in field effect transistors. In this letter, we report on a new approach to engineer a band gap in graphene field effect devices (FED) by…

The influence of edge vacancies on the working ability of the planar graphene tunnel field-effect transistor (TFET) is studied at various concentrations and distributions (normal, uniform, periodic) of defects. All calculations are…

The authors use two insulator layers in thermotunnel refrigerator to modify the shape of the tunneling barrier so that electrons with high kinetic energy pass it with increased probability. Theoretical analysis show that the overall…

It is shown that in a structure consisting of a superconducting ring-shaped electrode overlapped by a normal metal contact through a thin oxide barrier, measurements of the tunnel current in magnetic field can probe persistent currents in…

We present a comparative study of high carrier density transport in mono-, bi-, and trilayer graphene using electric-double-layer transistors to continuously tune the carrier density up to values exceeding 10^{14} cm^{-2}. Whereas in…

In a continuous search for the energy-efficient electronic switches, a great attention is focused on tunnel field-effect transistors (TFETs) demonstrating an abrupt dependence of the source-drain current on the gate voltage. Among all…

The electronic structure of multilayer graphenes depends strongly on the number of layers as well as the stacking order. Here we explore the electronic transport of purely ABA-stacked trilayer graphenes in a dual-gated field-effect device…

The rectification of electromagnetic waves to direct currents is a crucial process for energy harvesting, beyond-5G wireless communications, ultra-fast science, and observational astronomy. As the radiation frequency is raised to the…

A physics-based model for the surface potential and drain current for monolayer transition metal dichalcogenide (TMD) field-effect transistor (FET) is presented. Taking into account the 2D density-of-states of the atomic layer thick TMD and…

We present a scaling theory of two-dimensional (2D) field effect transistors (FETs). For devices with channel thickness less than 4 nm, the device electrostatics is dominated by the physical gate oxide thickness and not the effective oxide…

With the demand for improved performance in microfabricated devices, the necessity to apply greater electric fields and voltages becomes evident. When operating in vacuum, the voltage is typically limited by surface flashover forming along…

A state of an electron in a quantum wire or a thin film becomes metastable, when a static electric field is applied perpendicular to the wire direction or the film surface. The state decays via tunneling through the created potential…

We report a naturally-occurring two-dimensional material (graphene that can be viewed as a gigantic flat fullerene molecule, describe its electronic properties and demonstrate all-metallic field-effect transistor, which uniquely exhibits…