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相关论文: Hot electron transport in suspended multilayer gra…

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We study hot carrier transport under magnetic fields up to 15 T in suspended graphitic multilayers through differential conductance (dI/dV) spectroscopy. Distinct high-energy dI/dV anomalies have been observed and shown to be related to…

介观与纳米尺度物理 · 物理学 2011-09-05 Carlos Diaz Pinto , Sungbae Lee , Viktor G. Hadjiev , Haibing Peng

We report the synthesis of AB-stacked multilayer graphene via ambient pressure chemical vapor deposition on Cu foils, and demonstrate a method to construct suspended multilayer graphene devices. In four-terminal geometry, such devices were…

介观与纳米尺度物理 · 物理学 2012-10-18 Carlos Diaz-Pinto , Debtanu De , Viktor G. Hadjiev , Haibing Peng

Temperature-dependent resistivity of graphene grown by chemical vapor deposition (CVD) is investigated. We observe in low mobility CVD graphene device a strong insulating behavior at low temperatures and a metallic behavior at high…

介观与纳米尺度物理 · 物理学 2011-08-16 J. Heo , H. J. Chung , Sung-Hoon Lee , H. Yang , D. H. Seo , J. K. Shin , U-In Chung , S. Seo , E. H. Hwang , S. Das Sarma

The temperature dependence of electric transport properties of single-layer and few-layer graphene at large charge doping is of great interest both for the study of the scattering processes dominating the conductivity at different…

介观与纳米尺度物理 · 物理学 2016-09-02 R. S. Gonnelli , F. Paolucci , E. Piatti , Kanudha Sharda , A. Sola , M. Tortello , Jijeesh R. Nair , C. Gerbaldi , M. Bruna , S. Borini

We theoretically consider, comparing with the existing experimental literature, the electrical conductivity of gated monolayer graphene as a function of carrier density, temperature, and disorder in order to assess the prospects of…

介观与纳米尺度物理 · 物理学 2013-01-28 S. Das Sarma , E. H. Hwang

Graphene exhibits extraordinary electronic and mechanical properties, and extremely high thermal conductivity. Being a very stable atomically thick membrane that can be suspended between two leads, graphene provides a perfect test platform…

We study the electronic transport properties of dual-gated bilayer graphene devices. We focus on the regime of low temperatures and high electric displacement fields, where we observe a clear exponential dependence of the resistance as a…

介观与纳米尺度物理 · 物理学 2010-10-12 Thiti Taychatanapat , Pablo Jarillo-Herrero

In this work, we report on hot carrier diffusion in graphene across large enough length scales that the carriers are not thermalized across the crystal. The carriers are injected into graphene at one site and their thermal transport is…

介观与纳米尺度物理 · 物理学 2019-04-03 A. W. Draelos , A. Silverman , B. Eniwaye , E. G. Arnault , C. T. Ke , M. T. Wei , I. Vlassiouk , I. V. Borzenets , F. Amet , G. Finkelstein

One of the salient features of graphene is the very high carrier mobility that implies tremendous potential for use in electronic devices. Unfortunately, transport measurements find the expected high mobility only in freely suspended…

介观与纳米尺度物理 · 物理学 2015-06-04 Søren Ulstrup , Marco Bianchi , Richard Hatch , Dandan Guan , Alessandro Baraldi , Dario Alfè , Liv Hornekær , Philip Hofmann

We report the first temperature dependent phonon transport measurements in suspended Cu-CVD single layer graphene (SLG) from 15K to 380K using microfabricated suspended devices. The thermal conductance per unit cross section $\sigma$/A…

Hydrodynamic electrons in high-mobility graphene devices have demonstrated great potential in establishing an electronic analogue of relativistic quantum fluid in solid-state systems. One of the key requirements for observing viscous…

Chemical vapor deposition (CVD) has been proposed for large-scale graphene synthesis for practical applications. However, the inferior electronic properties of CVD graphene are one of the key problems to be solved. In this study, we present…

介观与纳米尺度物理 · 物理学 2016-06-01 Shaohua Xiang , Vaidotas Miseikis , Luca Planat , Stefano Guiducci , Stefano Roddaro , Camilla Coletti , Fabio Beltram , Stefan Heun

Two-dimensional (2D) crystals, such as graphene, hexagonal boron nitride and transitional metal dichalcogenides, have attracted tremendous amount of attention over the past decade due to their extraordinary thermal, electrical and optical…

材料科学 · 物理学 2017-02-16 Y. Zhao , Z. Wan , U. Hetmaniuk , M. P. Anantram

Hotspot is a ubiquitous phenomenon in microdevices/chips. In homogeneous nanoscale graphene disk with a hotspot, a graded thermal conductivity is observed previously even when the system size is fixed. However, the underlying physical…

介观与纳米尺度物理 · 物理学 2021-08-05 Chuang Zhang , Dengke Ma , Manyu Shang , Xiao Wan , JingTao Lü , Zhaoli Guo , Baowen Li , Nuo Yang

We have investigated the energy loss of hot electrons in metallic graphene by means of GHz noise thermometry at liquid helium temperature. We observe the electronic temperature T / V at low bias in agreement with the heat diffusion to the…

介观与纳米尺度物理 · 物理学 2012-08-14 A. C. Betz , F. Vialla , D. Brunel , C. Voisin , M. Picher , A. Cavanna , A. Madouri , G. Fève , J. -M. Berroir , B. Plaçais , E. Pallecchi

We calculate the temperature dependent conductivity of graphene in the presence of randomly distributed Coulomb impurity charges arising from the temperature dependent screening of the Coulomb disorder without any phonons. The purely…

介观与纳米尺度物理 · 物理学 2009-05-22 E. H. Hwang , S. Das Sarma

The electronic and vibrational properties of 2D materials are dramatically altered by the formation of a moir\'e superlattice. The lowest-energy phonon modes of the superlattice are two acoustic branches (called phasons) that describe the…

We have experimentally studied the nonlinear nature of electrical conduction in monolayer graphene devices on silica substrates. This nonlinearity manifests itself as a nonmonotonic dependence of the differential resistance on applied DC…

介观与纳米尺度物理 · 物理学 2012-06-04 A. S. Price , S. M. Hornett , A. V. Shytov , E. Hendry , D. W. Horsell

Metal/two-dimensional carbon junctions are characterized by using a nanoprobe in an ultrahigh vacuum environment. Significant differences were found in bias voltage (V) dependence of differential conductance (dI/dV) between edge- and…

介观与纳米尺度物理 · 物理学 2012-02-06 Yihong Wu , Ying Wang , Jiayi Wang , Miao Zhou , Aihua Zhang , Chun Zhang , Yanjing Yang , Younan Hua , Baoxi Xu

We report on the temperature dependent electron transport in graphene at different carrier densities $n$. Employing an electrolytic gate, we demonstrate that $n$ can be adjusted up to 4$\times10^{14}$cm$^{-2}$ for both electrons and holes.…

介观与纳米尺度物理 · 物理学 2010-12-14 Dmitri K. Efetov , Philip Kim
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