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相关论文: Gap opening in graphene by shear strain

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In this work, we explore the strain and curvature effects on the electronic properties of a curved graphene structure, called the graphene wormhole. The electron dynamics is described by a massless Dirac fermion containing…

介观与纳米尺度物理 · 物理学 2024-09-13 J. E. G. Silva , Ö. Yeşiltaş , J. Furtado , A. A. Araújo Filho

Here we study the evolution of local electronic properties of a twisted graphene bilayer induced by a strain and a high curvature. The strain and curvature strongly affect the local band structures of the twisted graphene bilayer; the…

介观与纳米尺度物理 · 物理学 2015-06-05 Wei Yan , Wen-Yu He , Zhao-Dong Chu , Mengxi Liu , Lan Meng , Rui-Fen Dou , Yanfeng Zhang , Zhongfan Liu , Jia-Cai Nie , Lin He

The electronic and transport properties of hybrid armchair zigzag nanostructures including U-shaped graphene nanoribbons and patterned nanopores structured graphene were studied using combination of density functional theory and…

材料科学 · 物理学 2021-04-05 Nguyen Tien Cuong

Strain-inducing deformations in graphene alter charge distributions and provide a new method to design specific features in the band structure and transport properties. Novel approaches implement engineered substrates to induce specifically…

介观与纳米尺度物理 · 物理学 2021-01-04 Md Tareq Mahmud , Nancy Sandler

We explore the rotational degree of freedom between graphene layers via the simple prototype of the graphene twist bilayer, i.e., two layers rotated by some angle $\theta$. It is shown that, due to the weak interaction between graphene…

材料科学 · 物理学 2015-03-13 S. Shallcross , S. Sharma , E. Kandelaki , O. A. Pankratov

A blueprint for producing scalable digital graphene electronics has remained elusive. Current methods to produce semiconducting-metallic graphene networks all suffer from either stringent lithographic demands that prevent reproducibility,…

Electron group velocity for graphene under uniform strain is obtained analitically by using the Tight-Binding approx- imation. Such closed analytical expressions are useful in order to calculate electronic, thermal and optical properties of…

介观与纳米尺度物理 · 物理学 2016-02-17 Wilfrido A. Gómez-Arias , Gerardo G. Naumis

The complete theory of electrical conductivity of graphene at arbitrary temperature is developed with taken into account mass-gap parameter and chemical potential. Both the in-plane and out-of-plane conductivities of graphene are expressed…

介观与纳米尺度物理 · 物理学 2017-12-25 G. L. Klimchitskaya , V. M. Mostepanenko , V. M. Petrov

Electronic properties of bilayer and multilayer graphene have generally been interpreted in terms of AB or Bernal stacking. However, it is known that many types of stacking defects can occur in natural and synthetic graphite; rotation of…

材料科学 · 物理学 2011-11-09 J. M. B. Lopes dos Santos , N. M. R. Peres , A. H. Castro Neto

Synthesis of graphene with reduced use of chemical reagents is essential for manufacturing scale-up and to control its structure and properties. In this paper, we report on a novel chemical-free mechanism of graphene exfoliation from…

We compute the optical conductivity for an out-of-plane deformation in graphene using an approach based on solutions of the Dirac equation in curved space. Different examples of periodic deformations along one direction translates into an…

介观与纳米尺度物理 · 物理学 2014-05-05 A. J. Chaves , T. Frederico , O. Oliveira , W. de Paula , M. C. Santos

We study nxn honeycomb superlattices of defects in graphene. The considered defects are missing p_z orbitals and can be realized by either introducing C atom vacancies or chemically binding simple atomic species at the given sites. Using…

材料科学 · 物理学 2015-05-14 Rocco Martinazzo , Simone Casolo , Gian Franco Tantardini

The physical processes occurring in the presence of disorder: point defects, grain boundaries, etc. may have detrimental effects on the electronic properties of graphene. Here we present an approach to reveal the grain structure of graphene…

We theoretically study the effects of electron-electron interaction in twisted bilayer graphene in applied transverse dc electric field. When the twist angle is not very small, the electronic spectrum of the bilayer consists of four Dirac…

强关联电子 · 物理学 2018-07-04 A. O. Sboychakov , A. V. Rozhkov , A. L. Rakhmanov , Franco Nori

Graphene is an atomically thin metallic membrane capable of sustaining reversible strain and offers a tempting prospect of controlling its optoelectronic properties via strain. Graphenes exceptional mechanical flexibility and tensile…

介观与纳米尺度物理 · 物理学 2022-06-06 Paul Froeter , Parsian Moseni , Apratim Khandelwal , Xiuling Li

We calculate thermopower of clean and impure bilayer graphene systems. Opening a band gap through the application of an external electric field is shown to greatly enhance the thermopower of bilayer graphene, which is more than four times…

材料科学 · 物理学 2015-05-18 Lei Hao , T. K. Lee

Graphene is the two-dimensional building block for carbon allotropes of every other dimensionality. Since its experimental discovery, graphene continues to attract enormous interest, in particular as a new kind of matter, in which electron…

The coupling of geometrical and electronic properties is a promising venue to engineer conduction properties in graphene. Confinement added to strain allows for interplay of different transport mechanisms with potential device applications.…

介观与纳米尺度物理 · 物理学 2014-08-14 R. Carrillo-Bastos , D. Faria , A. Latgé , F. Mireles , N. Sandler

The density of states and the AC conductivity of graphene under uniform strain are calculated using a new Dirac Hamiltonian that takes into account the main three ingredients that change the electronic properties of strained graphene: the…

介观与纳米尺度物理 · 物理学 2014-06-02 M. Oliva-Leyva , Gerardo G. Naumis

Graphene has many advantageous properties, but its lack of an electronic band gap makes this two dimensional material impractical for many nanoelectronic applications, for example field effect transistors. This problem can be circumvented…

介观与纳米尺度物理 · 物理学 2009-12-17 Peter Nemes Incze , Gabor Magda , Katalin Kamaras , Laszlo Peter Biro
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