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We report on the temperature dependent electron transport in graphene at different carrier densities $n$. Employing an electrolytic gate, we demonstrate that $n$ can be adjusted up to 4$\times10^{14}$cm$^{-2}$ for both electrons and holes.…

介观与纳米尺度物理 · 物理学 2010-12-14 Dmitri K. Efetov , Philip Kim

We theoretically consider, comparing with the existing experimental literature, the electrical conductivity of gated monolayer graphene as a function of carrier density, temperature, and disorder in order to assess the prospects of…

介观与纳米尺度物理 · 物理学 2013-01-28 S. Das Sarma , E. H. Hwang

We consider the dynamics of charge carriers in single-layer graphene that are subject to random temporal fluctuations of their mass gap. The optical conductivity is calculated by incorporating the quantum-stochastic time evolution into the…

介观与纳米尺度物理 · 物理学 2015-05-27 J. Z. Bernád

Detecting the carrier scattering mechanisms in a materials system is important for transport related science and engineering. The approaches of fast laser process and electrical conductivity matching were used in previous literature, which…

材料科学 · 物理学 2014-10-21 Shuang Tang , Mildred S. Dresselhaus

We employ ultrabroadband terahertz (THz) spectroscopy to expose the high-frequency transport properties of Dirac fermions in monolayer graphene. By controlling the carrier concentration via tunable electrical gating, both equilibrium and…

介观与纳米尺度物理 · 物理学 2024-10-29 G. Coslovich , R. P. Smith , S. -F. Shi , J. H. Buss , J. T. Robinson , F. Wang , R. A. Kaindl

We investigated the transient photoconductivity of graphene at various gate-tuned carrier densities by optical-pump terahertz-probe spectroscopy. We demonstrated that graphene exhibits semiconducting positive photoconductivity near zero…

介观与纳米尺度物理 · 物理学 2014-08-27 A. J. Frenzel , C. H. Lui , Y. C. Shin , J. Kong , N. Gedik

The temperature dependence of electric transport properties of single-layer and few-layer graphene at large charge doping is of great interest both for the study of the scattering processes dominating the conductivity at different…

介观与纳米尺度物理 · 物理学 2016-09-02 R. S. Gonnelli , F. Paolucci , E. Piatti , Kanudha Sharda , A. Sola , M. Tortello , Jijeesh R. Nair , C. Gerbaldi , M. Bruna , S. Borini

Temporally and spectrally resolved dynamics of optically excited carriers in graphene has been intensively studied theoretically and experimentally, whereas carrier diffusion in space has attracted much less attention. Understanding the…

介观与纳米尺度物理 · 物理学 2019-04-01 Roland Jago , Raül Perea-Causin , Samuel Brem , Ermin Malic

We fabricate electric double-layer field-effect transistor (EDL-FET) devices on mechanically exfoliated few-layer graphene. We exploit the large capacitance of a polymeric electrolyte to study the transport properties of three, four and…

介观与纳米尺度物理 · 物理学 2017-01-11 E. Piatti , S. Galasso , M. Tortello , J. R. Nair , C. Gerbaldi , D. Daghero , M. Bruna , S. Borini , R. S. Gonnelli

Using the semi-classical Boltzmann theory, we calculate the conductivity as function of the carrier density. As usually, we include the scattering from charged impurities, but conclude that the estimated impurity density is too low in order…

介观与纳米尺度物理 · 物理学 2009-11-13 T. Stauber , N. M. R. Peres , F. Guinea

Graphene is a 2-dimensional material with high carrier mobility and thermal conductivity, suitable for high-speed electronics. Conduction and valence bands touch at the Dirac point. The absorptivity of single-layer graphene is 2.3%, nearly…

介观与纳米尺度物理 · 物理学 2010-10-11 Marcus Freitag , Hsin-Ying Chiu , Mathias Steiner , Vasili Perebeinos , Phaedon Avouris

We performed radiofrequency (RF) reflectometry measurements at 2.4 GHz on electrolyte-gated graphene field-effect transistors (GFETs) utilizing a tunable stub-matching circuit for impedance matching. We demonstrate that the gate voltage…

介观与纳米尺度物理 · 物理学 2015-06-18 W. Fu , M. El Abbassi , T. Hasler , M. Jung , M. Steinacher , M. Calame , C. Schönenberger , G. Puebla-Hellmann , S. Hellmüller , T. Ihn , A. Wallraff

We investigate the transmissions of fermions through gapped graphene structures by employing a combination of double barrier tilting and a time-oscillating potential. The latter introduces additional sidebands into the transmission…

介观与纳米尺度物理 · 物理学 2024-05-28 Miloud Mekkaoui , Ahmed Jellal , Abderrahim El Mouhafid

Electrons moving in graphene behave as massless Dirac fermions, and they exhibit fascinating low-frequency electrical transport phenomena. Their dynamic response, however, is little known at frequencies above one terahertz (THz). Such…

Both transport $\tau_{tr}$ and elastic scattering times $\tau_{e}$ are experimentally determined from the carrier density dependence of the magnetoconductance of monolayer and bilayer graphene. Both times and their dependences in carrier…

介观与纳米尺度物理 · 物理学 2015-05-13 M. Monteverde , C. Ojeda-Aristizabal , R. Weil , K. Bennaceur , M. Ferrier , S. Gueron , C. Glattli , H. Bouchiat , J. N. Fuchs , D. Maslov

We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature. Our…

介观与纳米尺度物理 · 物理学 2008-01-07 S. V. Morozov , K. S. Novoselov , M. I. Katsnelson , F. Schedin , D. C. Elias , J. A. Jaszczak , A. K. Geim

The transient evolution of carriers in an intrinsic graphene under ultrafast excitation, which is caused by the collisionless interband transitions, is studied theoretically. The energy relaxation due to the quasielastic acoustic phonon…

介观与纳米尺度物理 · 物理学 2015-05-14 P. N. Romanets , F. T. Vasko

The weak temperature dependence of the resistance R(T) of monolayer graphene1-3 indicates an extraordinarily high intrinsic mobility of the charge carriers. Important complications are the presence of mobile scattering centres that strongly…

材料科学 · 物理学 2010-01-18 Viera Skakalova , Alan B. Kaiser , Jai Seung Yoo , Dirk Obergfell , Siegmar Roth

For graphene (a Dirac material) it has been theoretically predicted and experimentally observed that DC resistivity is proportional to $ T^4$ when the temperature is much less than Bloch- Gr\"{u}neisen ($\Theta_{BG}$) temperature and T…

强关联电子 · 物理学 2016-10-18 Luxmi Rani , Navinder Singh

Carrier transport in gated 2D graphene monolayers is theoretically considered in the presence of scattering by random charged impurity centers with density $n_i$. Excellent quantitative agreement is obtained (for carrier density $n >…

介观与纳米尺度物理 · 物理学 2007-10-09 E. H. Hwang , S. Adam , S. Das Sarma
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