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High performance enhancement mode semiconducting carbon nanotube field-effect transistors (CNTFETs) are obtained by combining ohmic metal-tube contacts, high dielectric constant HfO2 films as gate insulators, and electrostatically doped…

介观与纳米尺度物理 · 物理学 2015-06-24 Ali Javey , Jing Guo , Damon B. Farmer , Qian Wang , Dunwei Wang , Roy G. Gordon , Mark Lundstrom , Hongjie Dai

Three-terminal devices with conduction channels formed by quasi-metallic carbon nanotubes (CNT) are shown to operate as nanotube-based field-effect transistors under strong magnetic fields. The off-state conductance of the devices varies…

Single-walled carbon nanotubes (SWNTs) have been grown via chemical vapor deposition on high-kappa dielectric SrTiO3/Si substrates, and high-performance semiconducting SWNT field-effect transistors have been fabricated using the thin SrTiO3…

介观与纳米尺度物理 · 物理学 2007-12-05 B. M. Kim , T. Brintlinger , E. Cobas , Haimei Zheng , M. S. Fuhrer , Z. Yu , R. Droopad , J. Ramdani , K. Eisenbeiser

We report on microwave operation of top-gated single carbon nanotube transistors. From transmission measurements in the 0.1-1.6 GHz range, we deduce device transconductance gm and gate-nanotube capacitance Cg of micro- and nanometric…

Amorphous carbon nanotubes (a-CNT) with up to four walls and sizes ranging from 200 to 3200 atoms have been simulated, starting from initial random configurations and using the Gaussian Approximation Potential [Phys. Rev. B 95, 094203…

材料科学 · 物理学 2023-03-22 C. Ugwumadu , R. Thapa , Y. Al-Majali , J. Trembly , D. A. Drabold

We determined the frequency dependent effective permittivity of a large ternary network of randomly positioned resistors, capacitors, and diodes. A linear circuit analysis of such systems is shown to match the experimental dielectric…

介观与纳米尺度物理 · 物理学 2015-06-17 D. S. Bychanok , A. G. Paddubskaya , P. P. Kuzhir , S. A. Maksimenko , C. Brosseau , J. Macutkevic , S. Bellucci

We report strategies of achieving both high assembly yield of carbon nanotubes at selected position of the circuit via dielectrophoresis (DEP) and field effect transistor (FET) yield using semiconducting enriched single walled carbon…

介观与纳米尺度物理 · 物理学 2015-06-03 Muhammad R. Islam , Kristy J. Kormondy , Eliot Silbar , Saiful I. Khondaker

Semiconducting single-walled carbon nanotubes are studied in the diffusive transport regime. The peak mobility is found to scale with the square of the nanotube diameter and inversely with temperature. The maximum conductance, corrected for…

介观与纳米尺度物理 · 物理学 2009-11-11 Xinjian Zhou , Ji-Yong Park , Shaoming Huang , Jie Liu , Paul L. McEuen

Carbon Nanotube (CNT) appears as a promising candidate to shrink field-effect transistors (FET) to the nanometer scale. Extensive experimental works have been performed recently to develop the appropriate technology and to explore DC…

其他凝聚态物理 · 物理学 2009-11-13 H. Cazin d'Honincthun , S. Galdin-Retailleau , A. Bournel , P. Dollfus , J. -P. Bourgoin

Carbon Nanotubes (CNTs) of sufficiently large diameter and a few layers self-collapse into flat ribbons at atmospheric pressure, forming bundles of stacked CNTs that maximize packing and thus CNT interaction. Their improved stress transfer…

The electrical conductivity of the polyimide R-BAPB polymer filled with single-wall carbon nanotubes (CNT) with chirality (5,5) is modeled using a multi-scale approach. The modeling starts with molecular dynamics simulations of…

We simulated electron transport across a binary nanocrystal solid (BNS) of PbSe NCs with diameters of 6.5nm and 5.1nm. We used our Hierarchical Nanoparticle Transport Simulator HINTS to model the transport in these BNSs. The mobility…

介观与纳米尺度物理 · 物理学 2021-05-12 Luman Qu , Davis Unruh , Gergely T. Zimanyi

High performance p- and n-type single-walled carbon nanotube (SWNT) field-effect transistors (FETs) are obtained by using high and low work function metals, Pd and Al as source/drain (S/D) electrodes respectively. Ohmic contacts made to…

介观与纳米尺度物理 · 物理学 2007-05-23 Ali Javey , Qian Wang , Woong Kim , Hongjie Dai

The ultimate performance - ratio of electrical conductivity to optical absorbance - of single- walled carbon nanotube (SWCNTs) transparent conductive films (TCFs) is an issue of considerable application relevance. Here, we present direct…

介观与纳米尺度物理 · 物理学 2016-02-01 Kimmo Mustonen , Patrik Laiho , Antti Kaskela , Toma Susi , Albert G. Nasibulin , Esko I. Kauppinen

Four samples of transparent conductive films with different numbers of silver nanorings per unit area were produced. The sheet resistance, transparency, and haze were measured for each sample. Using Monte Carlo simulation, we studied the…

Carbon nanotube (CNT) electromechanical resonators have demonstrated unprecedented sensitivities for detecting small masses and forces. The detection speed in a cryogenic setup is usually limited by the CNT contact resistance and parasitic…

介观与纳米尺度物理 · 物理学 2018-07-04 Kyle Willick , Xiaowu Tang , Jonathan Baugh

Tens of graphene transistors with nanoperforated channels and different channel lengths were fabricated at the wafer scale. The nanoholes have a central diameter of 20 nm and a period of 100 nm, the lengths of the channel being of 1, 2, 4…

介观与纳米尺度物理 · 物理学 2018-03-14 Mircea Dragoman , Adrian Dinescu , Daniela Dragoman

Owing to their distinct properties, carbon nanotubes (CNTs) have emerged as promising candidate for field emission devices. It has been found experimentally that the results related to the field emission performance show variability. The…

材料科学 · 物理学 2009-09-29 N. Sinha , D. Roy Mahapatra , J. T. W. Yeow , R. V. N. Melnik

Theoretical calculations of carrier transport in single-walled carbon nanotubes are compared with recent experiments. Carrier-phonon scattering is accounted for using the deformation potential approximation. Comparing with experiments, a…

材料科学 · 物理学 2015-06-25 G. Pennington , A. Akturk , N. Goldsman , A. Wickenden

Carbon nanotube field-effect transistors with sub 20 nm long channels and on/off current ratios of > 1000000 are demonstrated. Individual single-walled carbon nanotubes with diameters ranging from 0.7 nm to 1.1 nm grown from structured…