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Single-walled carbon nanotubes are promising nanoelectronic materials but face long-standing challenges including production of pure semiconducting SWNTs and integration into ordered structures. Here, highly pure semiconducting…

A simple method combining photolithography and shadow (or angle) evaporation is developed to fabricate single-walled carbon nanotube (SWCNT) devices with tube lengths L~10-50 nm between metal contacts. Large numbers of such short devices…

材料科学 · 物理学 2009-11-10 Ali Javey , Pengfei Qi , Qian Wang , Hongjie Dai

The interactions between carbon nanotubes (CNTs) and metal adatoms as well as metal contacts are studied by means of ab initio electronic structure calculations. We show that the electronic properties of a semiconducting (8,4) CNT can be…

介观与纳米尺度物理 · 物理学 2017-07-04 F. Fuchs , A. Zienert , C. Wagner , J. Schuster , S. E. Schulz

Low field and high field transport properties of carbon nanotubes/polymer composites are investigated for different tube fractions. Above the percolation threshold f_c=0.33%, transport is due to hopping of localized charge carriers with a…

介观与纳米尺度物理 · 物理学 2009-11-07 J. M. Benoit , B. Corraze , O. Chauvet

The controlled covalent functionalization of semiconducting single-walled carbon nanotubes (SWCNTs) with luminescent sp$^{3}$ defects leads to additional narrow and tunable photoluminescence features in the near-infrared and even enables…

应用物理 · 物理学 2021-08-29 Nicolas F. Zorn , Felix J. Berger , Jana Zaumseil

We perform a detailed analysis of the band structure, phonon dispersion, and electron-phonon coupling of three types of small-radius carbon nanotubes (CNTs): (5,0), (6,0), and (5,5) with diameters 3.9, 4.7, and 6.8 \AA respectively. The…

介观与纳米尺度物理 · 物理学 2009-11-10 Ryan Barnett , Eugene Demler , Efthimios Kaxiras

Carbon nanotubes (CNTs) are a promising material for high-performance electronics beyond silicon. But unlike silicon, the nature of the transport band gap in CNTs is not fully understood. The transport gap in CNTs is predicted to be…

With decreasing device dimensions, the performance of carbon nanotube field-effect transistors (CNFETs) is limited by high Off currents except at low drain voltages. We show that an asymmetric design improves the performance, reducing Off…

凝聚态物理 · 物理学 2009-11-10 S. Heinze , J. Tersoff , Ph. Avouris

Coiled Carbon Nanotubes (CCNTs) are increasingly set to become a vital factor in the new generation of nanodevices and energy-absorbing materials due to their outstanding properties. In the following work, the multi-objective optimization…

材料科学 · 物理学 2021-03-16 Ehsan Shahini , Fazel Rangriz , Ali Karimi Taheri

Carbon nanotube (CNT) based electronic devices are promising for beyond-silicon solid-state electronics and vacuum micro-nano-electronics. Despite rapid progress in CNT field-effect transistor related solid-state electronics, the…

应用物理 · 物理学 2021-03-10 Nannan Li , Fei Yan , Baoqing Zeng , Yi Luo

In this work, we investigate the electrical conductivity of carbon nanotubes (CNTs), with a particular focus on the effects of doping. Using a first-principles approach, we study the electronic structure, phonon dispersion, and…

材料科学 · 物理学 2024-08-07 Mina Yoon , German D. Samolyuk , Kai Li , James A. Hayne , Tolga Aytug

A real-space quantum transport simulator for carbon nanoribbon (CNR) MOSFETs has been developed. Using this simulator, the performance of carbon nanoribbon (CNR) MOSFETs is examined in the ballistic limit. The impact of quantum effects on…

介观与纳米尺度物理 · 物理学 2007-05-23 Gengchiau Liang , Neophytos Neophytou , Mark S. Lundstrom , Dmitri E. Nikonov

We demonstrate solution processable large area field effect transistors (FETs) from aligned arrays of carbon nanotubes (CNTs). Commercially available, surfactant free CNTs suspended in aqueous solution were aligned between source and drain…

材料科学 · 物理学 2009-11-13 Paul Stokes , Eliot Silbar , Yashira M. Zayas , Saiful I. Khondaker

We present a scaling analysis of electronic and transport properties of metal-semiconducting carbon nanotube interfaces as a function of the nanotube length within the coherent transport regime, which takes fully into account atomic-scale…

介观与纳米尺度物理 · 物理学 2009-11-10 Yongqiang Xue , Mark A. Ratner

Macroscopic arrays of highly crystalline nanocarbons offer the possibility of modifying the electronic structure of their low dimensional constituents, for example through doping, and studying the resulting collective bulk behaviour.…

Semiconducting single-walled carbon nanotubes (SWCNTs) are a promising thermoelectric material with high power factors after chemical p- or n-doping. Understanding the impact of dopant counterions on charge transport and thermoelectric…

Building smaller transistors with enhanced functionality is critical in extending the limits of Moores law and meeting the demands of the electronics industry. Here we demonstrate transistor operation in a suspended single carbon nanotube…

介观与纳米尺度物理 · 物理学 2016-07-12 Robert McCoy , Fredrick Anderson , Eric L. Carter , Robinson L. Smith

Most carbon nanotube field-effect transistors (CNTFETs) directly attach metal source/drain contacts to an intrinsic nanotube channel. When the gate oxide thickness is reduced, such transistors display strong ambipolar conduction, even when…

介观与纳米尺度物理 · 物理学 2007-05-23 Jing Guo , Ali Javey , Hongjie Dai , Supriyo Datta , Mark Lundstrom

A nanoscopic simulation for an acceleration sensor is aimed based on the piezoresistive effect of carbon nanotubes (CNTs). Therefore, a compact model is built from density functional theory (DFT), compared with results of molecular dynamics…

介观与纳米尺度物理 · 物理学 2017-07-04 C. Wagner , S. Hartmann , B. Wunderle , J. Schuster , S. E. Schulz , T. Gessner

Nanometer thin single-walled carbon nanotube (CNT) films collected from the aerosol chemical deposition reactors have gathered attention for their promising applications. Densification of these pristine films provides an important way to…