相关论文: Deposition of La2Zr2O7 Film by Chemical Solution D…
Thin aluminum oxide films were deposited by a new and simple physicochemical method called chemical liquid phase deposition (CLD) on semiconductor materials. Aluminum sulfate with crystallized water and sodium bicarbonate were used as…
We report a detailed study performed on La2Zr2O7 (LZO) pyrochlore material grown by Metal-Organic Decomposition (MOD) method as buffer layers for YBa2Cu3O7-x (YBCO) coated conductors. High quality epitaxial LZO thin films have been obtained…
This work reports on sputter depositions carried out from a compound (Ti,Zr)2AlC target, whereupon Al-containing (Ti,Zr)C thin films (30-40 nm in thickness) were deposited on MgO(111) and Al2O3(0001) substrates at temperatures ranging…
A comparative study of the structural, optical and morphological properties of Cu2ZnSnS4 (CZTS) thin films prepared by two different techniques was performed. One consists of sequential evaporation of the elemental metallic precursors under…
Micron-thick boron films have been deposited by Pulsed Laser Deposition in vacuum on several substrates at room temperature. The use of high energy pulses (>700 mJ) results in the deposition of smooth coatings with low oxygen uptake even at…
Solution derived La2Zr2O7 films have drawn much attention for potential applications as thermal barriers or low-cost buffer layers for coated conductor technology. Annealing and coating parameters strongly affect the microstructure of…
We report on the synthesis of high-quality Co-doped ZnO thin films using the pulsed laser deposition technique on (0001)-Al$_2$O$_3$ substrates performed in an oxidizing atmosphere, using Zn and Co metallic targets. We firstly optimized the…
Copper oxide (CuO) thin films have been deposited on glass substrates by a facile sol-gel dip-coating technique with varying withdrawal speeds from 0.73 to 4.17 mm/s. The variation of film thickness manifested by dip-coating withdrawal…
In this paper we reported, to the best of our knowledge, the first deposition of highly oriented thin films (with thickness of about 90 nm) of NdCoO3 and Nd0.8Sr0.2CoO3 cobaltites on single-crystalline STO and LAO substrates. Our…
Cu2Ta4O12 (CTaO) thin films were successfully deposited on Si(100) substrates by pulsed-laser deposition technique. The crystalline structure and the surface morphology of the CTaO thin films were strongly affected by substrate temperature,…
The present study describes a facile route of zinc oxide (ZnO) grows using the solution-dependent electrostatic spray deposition (ESD) method at temperatures ranging from 300 {\deg}C - 500 {\deg}C. In this work, zinc chloride (ZnCl2) was…
We present the results of experiments on synthesis of ZnO nanoclusters by reactive pulsed laser deposition (PLD). The nanoclusters were formed and crystallized in the gas phase and deposited on SiO2 substrates. The nanostructured films were…
The present work deals with the synthesis of crystalline carbon nitride thin films by microwave plasma assisted chemical vapour deposition in N$_2$/CH$_4$ gas mixture. The discharge analysis by optical emission spectroscopy shows that the…
In the present study we report on properties of ZnCoO films grown at relatively low temperature by the Atomic Layer Deposition, using two reactive organic zinc precursors (dimethylzinc and diethylzinc). The use of these precursors allowed…
Rhombohedral B4C coatings were synthesised on fused silica substrates by CO2 laser-assisted chemical vapour deposition (LCVD), using a dynamic reactive atmosphere of BCl3, C2H4 and H2. Films with carbon content from 15 to 22 at.% were grown…
Thin films of cerium dioxide (CeO2) were deposited by atomic layer deposition (ALD) at 250 {\deg}C on both Si and TiN substrates. The ALD growth produces CeO2 films with polycrystalline cubic phase on both substrates. However, the films…
This Letter reports an anomaly of film porosity dependence on deposition rate during physical vapor deposition - the porosity increases as deposition rate decreases. Using glancing angle deposition of Cu on SiO2 substrate, the authors show…
Cerium dioxide (CeO2) thin films were deposited by atomic layer deposition (ALD) on both Si and TiN substrates. The ALD growth produces CeO2 cubic polycrystalline films on both substrates. However, the films show a preferential orientation…
Carbides stand out because of their high hardness and wear-resistance. Thus these materials are often discussed for coatings of machine tools etc. Within this work Boron Carbide (B4C) and Carbide (C) thin films were deposited on Si (100)…
Zinc oxide thin films were deposited by ultrasonic spray pyrolysis technique using different Zinc precursors: Zinc acetate, Zinc nitrate and zinc chloride with different molarities. All deposited films were characterized by various…