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We present a simple fabrication technique for lateral nanowire wrap-gate devices with high capacitive coupling and field-effect mobility. Our process uses e-beam lithography with a single resist-spinning step, and does not require chemical…

Owing to wide variety of applications of graphene, high-quality and economical way of synthesizing graphene is highly desirable. In this study, we report a cost effective and simple approach to production of high-quality graphene. Here the…

材料科学 · 物理学 2013-10-29 Prashant Tripathi , Ch. Ravi Prakash Patel , M. A. Shaz , O. N. Srivastava

High mobility is a crucial requirement for a large variety of electronic device applications. The state-of-the-art for high quality graphene devices is based on heterostructures made with graphene encapsulated in $>80\,$nm-thick flakes of…

介观与纳米尺度物理 · 物理学 2022-07-27 Karuppasamy Pandian Soundarapandian , Domenico De Fazio , Sefaattin Tongay , Frank H. L. Koppens

We report a non-contact method for conductivity and sheet resistance measurements of graphene samples using a high Q microwave dielectric resonator perturbation technique, with the aim of fast and accurate measurement of microwave…

材料科学 · 物理学 2015-06-15 L Hao , J Gallop , S Goniszewski , A Gregory , O Shaforost , N Klein , R Yakimova

Grayscale lithography allows the creation of micrometer-scale features with spatially-controlled height in a process that is fully compatible with standard lithography. Here, solid immersion lenses are demonstrated in silicon carbide using…

We studied the stability and superconductivity of FeSe nanosheets during an in-air device fabrication process. Methods were developed to improve the exfoliation yield and to maintain the superconductivity of FeSe. Raman spectroscopy, atomic…

材料科学 · 物理学 2019-01-30 Rui Yang , Weijun Luo , Shun Chi , Douglas Bonn , Guangrui Xia

We report on suspended single-layer graphene deposition by a transfer-printing approach based on polydimethylsiloxane stamps. The transfer printing method allows the exfoliation of graphite flakes from a bulk graphite sample and their…

介观与纳米尺度物理 · 物理学 2015-05-28 Sarah Goler , Vincenzo Piazza , Stefano Roddaro , Vittorio Pellegrini , Fabio Beltram , Pasqualantonio Pingue

Graphene ranks highly as a possible material for future high-speed and flexible electronics. Current fabrication routes, which rely on metal substrates, require post synthesis transfer of the graphene onto a Si wafer or in the case of…

Graphene stands as a promising material with vast potential across energy storage, electronics, etc. Here, we present a novel mechanical approach utilizing ultrasonic high-energy intercalation exfoliation to extract monolayer graphene from…

材料科学 · 物理学 2025-01-15 Kaitong Sun , Si Wu , Junchao Xia , Yinghao Zhu , Guanping Xu , Hai-Feng Li

We measured the conductance fluctuation of bi- and trilayer graphene devices prepared on mechanical exfoliated graphene by an all-dry, lithography-free process using an ultrathin quartz filament as a shadow mask. Reproducible fluctuations…

介观与纳米尺度物理 · 物理学 2009-11-13 Neal E. Staley , Conor Puls , Ying Liu

Graphene and related two-dimensional materials are promising candidates for atomically thin, flexible, and transparent optoelectronics. In particular, the strong light-matter interaction in graphene has allowed for the development of…

Heterostructures formed by stacking layered materials require atomically clean interfaces. However, contaminants are usually trapped between the layers, aggregating into blisters. We report a process to remove such blisters, resulting in…

介观与纳米尺度物理 · 物理学 2019-04-03 D. G. Purdie , N. M. Pugno , T. Taniguchi , K. Watanabe , A. C. Ferrari , A. Lombardo

The transfer-free synthesis of high-quality, large-area graphene on a given dielectric substrate, which is highly desirable for device applications, remains a significant challenge. In this paper, we report on a simple rapid thermal…

We present a novel flipping transfer method for van der Waals heterostructures, offering a significant advancement over previous techniques by eliminating the need for polymers and solvents. Here, we utilize commercially available gel film…

We describe a simple and scalable method for the transfer of CVD graphene for the fabrication of field effect transistors. This is a dry process that uses a modified RCA cleaning step to improve the surface quality. In contrast to…

介观与纳米尺度物理 · 物理学 2016-01-07 T. S. Abhilash , Roberto De Alba , Nikolay Zhelev , Harold G Craighead , Jeevak M Parpia

Graphene-hexagonal boron nitride (hBN) scalable heterostructures are pivotal for the development of graphene-based high-tech applications. In this work, we demonstrate the realization of high-quality graphene-hBN heterostructures entirely…

Graphene's original promise to succeed silicon faltered due to pervasive edge disorder in lithographically patterned deposited graphene and the lack of a new electronics paradigm. Here we demonstrate that the annealed edges in…

Graphene has recently attracted much interest as a material for flexible, transparent electrodes or active layers in electronic and photonic devices. However, realization of such graphene-based devices is limited due to difficulties in…

材料科学 · 物理学 2015-07-21 Sugkyun Cha , Minjeong Cha , Seojun Lee , Jin Hyoun Kang , Changsoon Kim

We report nanoscale patterning of graphene using a helium ion microscope configured for lithography. Helium ion lithography is a direct-write lithography process, comparable to conventional focused ion beam patterning, with no resist or…

介观与纳米尺度物理 · 物理学 2015-05-13 D. C. Bell , M. C. Lemme , L. A. Stern , J. R. Williams , C. M. Marcus

We report on a new method for graphene synthesis and assessment of the properties of the resulting large-area graphene layers. Graphene was produced by the high pressure - high temperature growth from the natural graphitic source by…

材料科学 · 物理学 2008-05-03 F. Parvizi , D. Teweldebrhan , S. Ghosh , I. Calizo , A. A. Balandin , H. Zhu , R. Abbaschian