相关论文: Tunneling Spin Injection into Single Layer Graphen…
The injection of spin polarized electrons from ferromagnetic metals (Fe and Co) into gallium nitride (GaN) via scanning tunneling microscopy (STM) is demonstrated. Electrons from STM tips are injected into the semiconductor. Net circular…
The unusual electronic properties of single-layer graphene make it a promising material system for fundamental advances in physics, and an attractive platform for new device technologies. Graphene's spin transport properties are expected to…
We present results of tunneling studies of p-Hg_{1-x}Cd_{x}Te-oxide-Al structures with 0.165<x<0.2 in a magnetic field up to 6 T. The tunneling conductivity oscillations resulting from the Landau quantization of the energy spectrum in the…
Spin transport characteristics of graphene has been extensively studied so far. The spin transport along c-axis is however reported by rather limited number of papers. We have studied spin transport characteristics through graphene along…
The conductance and tunnel magneto-resistance (TMR) of the double barrier magnetic tunnel junction with spin-valve sandwich (F/P/F) inserted between two insulating barrier, are theoretically investigated. It is shown, that resonant…
We report on systematic ab-initio investigations of Co and Cr interlayers embedded in Fe(001)/MgO/Fe(001) magnetic tunnel junctions, focusing on the changes of the electronic structure and the transport properties with interlayer thickness.…
We investigate spin relaxation in graphene spin valves and observe strongly contrasting behavior for single layer graphene (SLG) and bilayer graphene (BLG). In SLG, the spin lifetime ({\tau}s) varies linearly with the momentum scattering…
We calculate theoretically the Coulomb drag resistivity for two graphene monolayers spatially separated by a distance "$d$". We show that the frictional drag induced by inter-layer electron-electron interaction goes asymptotically as…
The introduction and control of ferromagnetism in graphene opens up a range of new directions for fundamental and applied studies. Several approaches have been pursued so far, such as introduction of defects, functionalization with adatoms,…
We report on the transport properties of hybrid devices obtained by depositing graphene on a LaAlO3/SrTiO3 oxide junction hosting a 4 nm-deep two-dimensional electron system. At low graphene-oxide inter-layer bias the two electron systems…
The two-dimensional atomically thin insulator hexagonal boron nitride (h-BN) constitutes a new paradigm in tunnel based devices. A large band gap along with its atomically flat nature without dangling bonds or interface trap states makes it…
The ground state of charge neutral graphene under perpendicular magnetic field was predicted to be a quantum Hall topological insulator with a ferromagnetic order and spin-filtered, helical edge channels. In most experiments, however, an…
We demonstrate pseudo spin valves with a (112)-textured DO_22 MnGa (MnGa) tilted magnetization fixed layer and an in-plane CoFe free layer. Single D0_22 MnGa films exhibit a small magnetoresistance (MR) typically observed in metals. In…
Incorporating relativistic physics into quantum tunneling can lead to exotic behavior such as perfect transmission via Klein tunneling. Here, we probe the tunneling properties of spin-momentum locked relativistic fermions by designing and…
Magnetic tunnel junctions with wide band gap semiconductor ZnTe barrier were fabricated. A very low barrier height and sizable magnetoresistance were observed in the Fe/ZnTe/Fe junctions at room temperature. The nonlinear I-V characteristic…
Electrical generation and detection of pure spin currents without the need of magnetic materials are key elements for the realization of full electrically controlled spintronic devices. In this framework, achieving a large spin-to-charge…
We report room temperature scanning tunneling microscopy and spectroscopy study of bilayer graphene prepared by mechanical exfoliation on SiO$_2$/Si surface and electrically contacted with gold pads using a mechanical mask. The bulk…
An interlayer distance modulation in twisted bilayer graphene is reported. This is achieved by an in-situ annealing technique. The transformation of systematic vacuum and hydrogen annealing effects in twisted bilayer CVD graphene on SiO2…
A proposal to detect the purported canted antiferromagnet order for the $\nu=0$ quantum Hall state of graphene based on a two-terminal spin transport setup is theoretically discussed. In the presence of a magnetic field normal to the…
We have examined the interfacial thermal conductance {\sigma}int of single and multi-layer graphene samples prepared on fused SiO2 substrates by mechanical exfoliation of graphite. By using an ultrafast optical pump pulse and monitoring the…