相关论文: Tunneling Spin Injection into Single Layer Graphen…

We examine the spectroscopic signatures of tunneling through a Kitaev quantum spin liquid (QSL) barrier in a number of experimentally relevant geometries. We combine contributions from elastic and inelastic tunneling processes and find that…

The conductance through single-layer graphene (SLG) and AA/AB-stacked bilayer graphene (BLG) junctions is obtained by taking into account band gap and bias voltage terms. First, we consider gapped SLG, while in between, they are connected…

Due to their unique electron dispersion and lack of a Fermi surface, Coulomb interactions in undoped two-dimensional Dirac systems, such as single, bi- and tri-layer graphene, can be marginal or relevant. Relevant interactions can result in…

We present a theoretical study of momentum-resolved tunneling between parallel two-dimensional conductors whose charge carriers have a (pseudo-)spin-1/2 degree of freedom that is strongly coupled to their linear orbital momentum. Specific…

We obtain in single van-der-Waals layer of MnBi2Te4 the spin-valve-like ferromagnet/spin glass (SG)/ferromagnet architecture, where the switch of individual spin states in the SG-like layer appears as the resistance switch behavior. The…

We consider graphene deposited on monolayers of such transition-metal dichalcogenides like MoSe$_2$, WSe$_2$, MoS$_2$, and WS$_2$. Our key objective is to study the impact of relative twist angle between the monolayers on the…

Pristine graphene is potentially an ideal medium to transport spin information. Proximity effects, where a neighbouring material is used to alter the properties of a material in adjacent (or proximitized) regions, can also be used in…

We report on first-principles calculations of spin-dependent properties in graphene induced by its interaction with a nearby magnetic insulator (Europium oxide, EuO). The magnetic proximity effect results in spin polarization of graphene…

We studied the drift of electron spins under an applied DC electric field in single layer graphene spin valves in a field effect transport geometry at room temperature. In the metallic conduction regime ($n \simeq 3.5 \times 10^{16}$…

We demonstrate a spin diode consisting of a semiconductor free nano-scale Fe/MgO-based double tunnel junction. The device exhibits a near perfect spin-valve effect combined with a strong diode effect. The mechanism consistent with our data…

We study spin dependent transport through a magnetic bilayer graphene nanojunction configured as two dimensional normal/ferromagnetic/normal structure where the gate-voltage is applied on the layers of ferromagnetic graphene. Based on the…

Spin-pumping generates pure spin currents in normal metals at the ferromagnet (F)/normal metal (N) interface. The efficiency of spin-pumping is given by the spin mixing conductance, which depends on N and the F/N interface. We directly…

We introduce a two-dimensional model of spin-1/2 Dirac fermions in graphene subjected to a highly tunable electric field, which exhibits super-Klein tunneling. The electric field can be continuously interpolated between two limiting…

Spin transport in graphene carries the potential of a long spin diffusion length at room temperature. However, extrinsic relaxation processes limit the current experimental values to 1-2 um. We present Hanle spin precession measurements in…

Vertical graphene-based device concepts that rely on quantum mechanical tunneling are intensely being discussed in literature for applications in electronics and optoelectronics. In this work, the carrier transport mechanisms in…

We have demonstrated by electroluminescence the injection of spin polarized electrons through Co/Al2O3/GaAs tunnel barrier into p-doped InAs/GaAs quantum dots embedded in a PIN GaAs light emitting diode. The spin relaxation processes in the…

We address the problem of barrier tunneling in the two-dimensional T_3 lattice (dice lattice). In particular we focus on the low-energy, long-wavelength approximation for the Hamiltonian of the system, where the lattice can be described by…

The effect of a parallel magnetic field $B$ and a potential substrate on the transmission, conductivity, and Fano factor of a biased ABC-stacked $pn$ and $pnp$ trilayer graphene junction (ABC-TLG) is investigated theoretically at low…

In this work, we theoretically investigate the spin-Peltier effect in a heterostructure composed of graphene and a ferromagnetic insulator (FI). Using a microscopic formalism based on the characteristic spin-flip scattering length at the…

When charge current passes through a normal metal that exhibits spin Hall effect, spin accumulates at the edge of the sample in the transverse direction. We predict that this spin accumulation, or spin voltage, enables quantum tunneling of…