相关论文: Tunneling Spin Injection into Single Layer Graphen…

We compute thermal spin transfer torques (TST) in Fe-MgO-Fe tunnel junctions using a first principles wave function-matching method. At room temperature, the TST in a junction with 3 MgO monolayers amounts to 10^-7J/m^2/K, which is…

The observation of micron size spin relaxation makes graphene a promising material for applications in spintronics requiring long distance spin communication. However, spin dependent scatterings at the contact/graphene interfaces affect the…

Efforts to achieve efficient injection of spin-polarized electrons into a semiconductor, a key prerequisite for developing electronics that exploit the electron's spin degree of freedom, have so far met with limited success. Here we report…

We report on spin injection experiments at a Co/Al$_2$O$_3$/GaAs interface with electrical detection. The application of a transverse magnetic field induces a large voltage drop $\Delta V$ at the interface as high as 1.2mV for a current…

Further development of the field of all-electric spintronics requires the successful integration of spin transport channels with spin injector/generator elements. While with the advent of graphene and related 2D materials high performance…

We consider a new type of magnetic tunnel junction, which consists of two ferromagnetic tunnel barriers acting as spin filters (SFs), separated by a nonmagnetic metal (NM) layer. Using the transfer matrix method and the free-electron…

We report the successful electrical creation of spin polarization in p-type Si at room temperature by using an epitaxial MgO(001) tunnel barrier and Fe(001) electrode. Reflection high-energy electron diffraction observations revealed that…

The two-dimensional (2D) semiconductor molybdenum disulfide (MoS2) has attracted widespread attention for its extraordinary electrical, optical, spin and valley related properties. Here, we report on spin polarized tunneling through…

In our previous work, we synthesized a metal/2D material heterointerface consisting of $L1_0$-ordered iron-palladium (FePd) and graphene (Gr) called FePd(001)/Gr. This system has been explored by both experimental measurements and…

Recently, it has been shown that magnetic tunnel junctions with thin MgO tunnel barriers exhibit extraordinarily high tunneling magnetoresistance (TMR) values at room temperature1, 2. However, the physics of spin dependent tunneling through…

We show that engineering of tunnel barriers forming at the interfaces of a one-dimensional spin valve provides a viable path to a strong gate-voltage tunability of the magnetoresistance effect. In particular, we investigate theoretically a…

We study the room-temperature electrical control of charge and spin transport in high-quality bilayer graphene, fully encapsulated with hBN and contacted via 1D spin injectors. We show that spin transport in this device architecture is…

Proximity-induced spin-orbit coupling in graphene has led to the observation of intriguing phenomena like time-reversal invariant $\mathbb{Z}_2$ topological phase and spin-orbital filtering effects. An understanding of the effect of…

The combination of spin-orbit coupling driven effects and multiferroic tunneling properties was explored experimentally in thin Pt/Co/BTO/LSMO multilayers. The presence of a Pt heavy metal allows for the spin current-induced magnetization…

We investigate the behavior of both pure spin and spin-polarized currents measured with four probe non-local and two probe local configurations up to room temperature and under external gate voltage in a lateral graphene transistor,…

We study theoretically the transport of the one-dimensional single-channel interacting electron gas through a strong potential barrier in the parameter regime where the spin sector of the low-energy Luttinger liquid theory is gapped by…

Conversion of pure spin current to charge current in single-layer graphene (SLG) is investigated by using spin pumping. Large-area SLG grown by chemical vapor deposition is used for the conversion. Efficient spin accumulation in SLG by spin…

We study the flow of a pure spin current through zinc oxide by measuring the spin Hall magnetoresistance (SMR) in thin film trilayer samples consisting of bismuth-substituted yttrium iron garnet (Bi:YIG), gallium-doped zinc oxide (Ga:ZnO),…

Spin accumulation and spin precession in single-layer graphene are studied by non-local spin valve measurements at room temperature. The dependence of the non-local magnetoresistance on electrode spacing is investigated and the results…

Graphene is a truly two-dimensional material with exceptional electronic, mechanical, and optical properties. As such, it consists of surface only and can be probed by the well developed surface-science techniques as, e.g., scanning…