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Nearly 30% increase of the ferromagnetic phase transition temperature has been achieved in strained MnAs nanocrystals embedded in a wurtzite GaAs matrix. Wurtzite GaAs exerts tensile stress on hexagonal MnAs nanocrystals, preventing a…

X-ray diffraction, transmission electron microscopy, and magnetization measurements are employed to study the structural and magnetic properties of Mn-rich (Mn,Ga)As nanocrystals embedded in GaAs. These nanocomposites are obtained by…

We demonstrate the manipulation of the Curie temperature of buried layers of the ferromagnetic semiconductor (Ga,Mn)As using nanolithography to enhance the effect of annealing. Patterning the GaAs-capped ferromagnetic layers into nanowires…

材料科学 · 物理学 2009-11-11 K. F. Eid , B. L. Sheu , O. Maksimov , M. B. Stone , P. Schiffer , N. Samarth

Structural and magnetic properties of GaAs thin films with embedded MnAs nanoclusters were investigated as function of the annealing temperature and layers composition. The presence of two kinds of nanoclusters with different dimensions and…

Mn doped semiconductors are extremely interesting systems due to their novel magnetic properties suitable for the spintronics applications. It has been shown recently by both theory and experiment that Mn doped GaN systems have a very high…

材料科学 · 物理学 2016-08-31 B. Sanyal , O. Bengone , S. Mirbt

In the Fe-doped GaN phase-separated magnetic semiconductor GaFeN, the presence of embedded Ga$_y$Fe$_{4-y}$N nanocrystals determines the magnetic properties of the system. Here, through a combination of anomalous x-ray diffraction and…

材料科学 · 物理学 2020-11-04 A. Navarro-Quezada , K. Gas , A. Spindlberger , F. Karimi , M. Sawicki , G. Ciatto , A. Bonanni

We describe a systematic study of the synthesis, microstructure and magnetization of hybrid ferromagnet-semiconductor nanomaterials comprised of MnAs nanoclusters embedded in a p-doped GaAs matrix. These samples are created during the in…

材料科学 · 物理学 2015-03-19 D. W. Rench , P. Schiffer , N. Samarth

MnAs has been grown by means of MBE on the GaN(0001)-(1x1) surface. Two options of initiating the crystal growth were applied: (a) a regular MBE procedure (manganese and arsenic were delivered simultaneously) and (b) subsequent deposition…

材料科学 · 物理学 2009-11-13 I. A. Kowalik , B. J. Kowalski , R. J. Iwanowski , K. Kopalko , E. Łusakowska , M. Sawicki

Single-phase Ni0.46Mn0.54As films with strained C1b symmetry have been successfully grown on GaAs (001) substrates by molecular-beam epitaxy. The epitaxial relationship between the film and the substrate has been studied using synchrotron…

材料科学 · 物理学 2019-01-30 J. L. Ma , H. L. Wang , X. M. Zhang , S. Yan , W. S. Yan , J. H. Zhao

We present an investigation of the magnetic behavior of epitaxial MnAs films grown on GaAs(100). We address the dependence of the magnetic moment, ferromagnetic transition temperature ($T_c$) and magnetocrystalline anisotropy constants on…

We examine the Mn concentration dependence of the electronic and magnetic properties of optimally annealed Ga1-xMnxAs epilayers for 1.35% < x < 8.3%. The Curie temperature (Tc), conductivity, and exchange energy increase with Mn…

凝聚态物理 · 物理学 2009-11-07 S. J. Potashnik , K. C. Ku , R. Mahendiran , S. H. Chun , R. F. Wang , N. Samarth , P. Schiffer

A new scenario of the mechanism of intriguing ferromagnetic properties in Mn-doped magnetic semiconductor (Ga,Mn)As is examined in detail. We find that magnetic features seen in zero-field cooled and field cooled magnetizations are not…

材料科学 · 物理学 2009-11-11 K. Hamaya , T. Koike , T. Taniyama , T. Fujii , Y. Kitamoto , Y. Yamazaki

The approximate location in the Zaanen-Sawatzky-Allen diagram of the phase-separated (Ga,Mn)As material, consisting of MnAs nanoclusters embedded in GaAs, is determined on the basis of configuration-interaction (CI) cluster-model analysis…

介观与纳米尺度物理 · 物理学 2011-08-05 M. Moreno , K. H. Ploog

The annealing-induced formation of (Mn,Ga)As nanocrystals in (Ga,Mn)As/GaAs superlattices was studied by X-ray diffraction, transmission electron microscopy and magnetometry. The superlattice structures with 50 A thick (Ga,Mn)As layers…

材料科学 · 物理学 2015-06-03 J. Sadowski , J. Z. Domagala , R. Mathieu , A. Kovacs , P. Dluzewski

(Ga,Mn)As and related diluted magnetic semiconductors play a major role in spintronics research because of their potential to combine ferromagnetism and semiconducting properties in one physical system. Ferromagnetism requires ~1-10% of…

材料科学 · 物理学 2009-11-13 K. Olejnik , M. H. S. Owen , V. Novak , J. Masek , A. C. Irvine , J. Wunderlich , T. Jungwirth

We explored the magnetic behavior of a common two-phase nanomagnetic system by Monte Carlo computer simulation of a modified Heisenberg model on a 3D complex lattice with single- and cluster-spins. The effect of exchange coupling between…

材料科学 · 物理学 2007-05-23 Y. Z. Shao , W. R. Zhong , G. M. Lin , X. D. Hu

A combination of high-resolution x-ray diffraction and a new technique of x-ray standing wave uorescence at grazing incidence is employed to study the structure of (Ga,Mn)As diluted magnetic semiconductor and its changes during post-growth…

材料科学 · 物理学 2009-11-11 V. Holy , Z. Matej , O. Pacherova , V. Novak , M. Cukr , K. Olejnik , T. Jungwirth

We probe the real space electronic response to a local magnetic impurity in isovalent and heterovalent doped BaFe2As2 (122) using Nuclear Magnetic Resonance (NMR). The local moments carried by Mn impurities doped into…

超导电性 · 物理学 2021-11-24 D. LeBoeuf , Y. Texier , M. Boselli , A. Forget , D. Colson , J. Bobroff

We report on an enhancement of the Curie temperature in GaMnAs/InGaMnAs superlattices grown by low-temperature molecular beam epitaxy, which is due to thin InGaMnAs or InGaAs films embedded into the GaMnAs layers. The pronounced increase of…

材料科学 · 物理学 2009-11-10 A. Koeder , W. Limmer , S. Frank , W. Schoch , V. Avrutin , R. Sauer , K. Zuern , P. Ziemann , A. Waag

The structural and magnetic properties of Mn5Ge3Cx films prepared at elevated substrate temperatures TS are investigated. In particular, films with x >= 0.5 and TS = 680 K exhibit a strongly enhanced Curie temperature TC = 440 K compared to…

材料科学 · 物理学 2009-10-31 M. Gajdzik , C. Suergers , M. Kelemen , H. v. Loehneysen
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