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相关论文: Electrically-induced n-i-p junctions in multiple g…

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We study the processes of the electron and hole injection (double injection) into the i-region of graphene-layer and multiple graphene-layer p-i-n structures at the forward bias voltages. The hydrodynamic equations governing the electron…

介观与纳米尺度物理 · 物理学 2015-06-16 V. Ryzhii , I. Semenikhin , M. Ryzhii , D. Svintsov , V. Vyurkov , A. Satou , T. Otsuji

We investigate the electron transport in smooth graphene pn junctions, generated by gradually varying electrostatic potentials. The numerically calculated coherent current flow patterns can be understood largely in terms of semi-classical…

介观与纳米尺度物理 · 物理学 2021-01-13 Emmanuel Paredes-Rocha , Yonatan Betancur-Ocampo , Nikodem Szpak , Thomas Stegmann

We evaluate the effect of the recombination associated with interlayer transitions in ungated and gated double-graphene-layer (GL) structures on the injection of electrons and holes. Using the proposed model, we derive analytical…

介观与纳米尺度物理 · 物理学 2015-06-18 M. Ryzhii , V. Ryzhii , T. Otsuji , P. P. Maltsev , V. G. Leiman , N. Ryabova , V. Mitin

To understand the band bending caused by metal contacts, we study the potential and charge density induced in graphene in response to contact with a metal strip. We find that the screening is weak by comparison with a normal metal as a…

材料科学 · 物理学 2015-05-14 P. A. Khomyakov , A. A. Starikov , G. Brocks , P. J. Kelly

The focusing of electric current by a single \textit{p-n} junction in graphene is predicted. We show that precise focusing can be achieved by fine-tuning the densities of carriers on the n- and p-sides of the junction to equal values,…

介观与纳米尺度物理 · 物理学 2009-11-13 Vadim V. Cheianov , Vladimir Fal'ko , B. L. Altshuler

Ballistic semiconductor structures have allowed the realization of optics-like phenomena in electronics, including magnetic focusing and lensing. An extension that appears unique to graphene is to use both n and p carrier types to create…

介观与纳米尺度物理 · 物理学 2011-04-27 J. R. Williams , Tony Low , M. S. Lundstrom , C. M. Marcus

A massive quantum particle on a two-dimensional curved surface experiences a surface-geometry induced attractive potential that is characterized by the radii of curvature at a given point. With bilayer graphene sheets and carbon…

其他凝聚态物理 · 物理学 2009-10-07 Yogesh N. Joglekar , Avadh Saxena

A p-n junction, induced in graphene by gating, works to contrast the edge states of electrons and holes on each side of it. In a magnetic field those edge states carry two species of persistent current, which are intimately tied to the…

介观与纳米尺度物理 · 物理学 2024-11-05 K. Shizuya

We have developed a device fabrication process to pattern graphene into nanostructures of arbitrary shape and control their electronic properties using local electrostatic gates. Electronic transport measurements have been used to…

介观与纳米尺度物理 · 物理学 2008-04-14 Barbaros Özyilmaz , Pablo Jarillo-Herrero , Dmitri Efetov , Dmitri A. Abanin , Leonid S. Levitov , Philip Kim

Electric transport of double gated bilayer graphene devices is studied as a function of charge density and bandgap. A top gate electrode can be used to control locally the Fermi level to create a pn junction between the double-gated and…

介观与纳米尺度物理 · 物理学 2012-01-06 Hiroki Shioya , Michihisa Yamamoto , Saverio Russo , Monica F. Craciun , Seigo Tarucha

The problem of electrostatic screening of a charged line by undoped or weakly doped graphene is treated beyond the linear-response theory. The induced electron density is found to be approximately doping independent, n(x)~(log x)^2/x^2, at…

介观与纳米尺度物理 · 物理学 2015-06-24 Bor-Yuan Jiang , Michael M. Fogler

We investigate electronic transport through a graphene $n$-$p$ junction in the quantum Hall effect regime at high perpendicular magnetic field, when the filling factors in the $n$-doped and $p$-doped regions are fixed to 2 and -2…

介观与纳米尺度物理 · 物理学 2018-07-30 Qianfan Ma , François D. Parmentier , Preden Roulleau , Geneviève Fleury

We observe a dc electric current in response to terahertz radiation in lateral inter-digitated double-comb graphene p-n junctions. The junctions were fabricated by selective ultraviolet irradiation inducing p-type doping in intrinsic n-type…

介观与纳米尺度物理 · 物理学 2018-02-14 Yu. B. Vasilyev , G. Yu. Vasileva , S. Novikov , S. A. Tarasenko , S. N. Danilov , S. D. Ganichev

Creation of sharp lateral p-n junctions in graphene devices, with transition widths well below the Fermi wavelength of graphene charge carriers, is vital to study and exploit these electronic systems for electron-optical applications. The…

介观与纳米尺度物理 · 物理学 2019-11-19 Ferney A. Chaves , David Jimenez , Jaime E. Santos , Peter Boggild , Jose M. Caridad

A near-field scanning optical microscope is used to locally induce photocurrent in a graphene transistor with high spatial resolution. By analyzing the spatially resolved photo-response, we find that in the n-type conduction regime a p-n-p…

介观与纳米尺度物理 · 物理学 2015-05-13 T. Mueller , F. Xia , M. Freitag , J. Tsang , Ph. Avouris

Spatial manipulation of current flow in graphene could be achieved through the use of a tilted pn junction. We show through numerical simulation that a pseudo-Hall effect (i.e. non-equilibrium charge and current density accumulating along…

介观与纳米尺度物理 · 物理学 2009-12-20 Tony Low , Joerg Appenzeller

In contrast to graphene which is a gapless semiconductor, graphane, the hydrogenated graphene, is a semiconductor with an energy gap. Together with the two-dimensional geometry, unique transport features of graphene, and possibility of…

材料科学 · 物理学 2010-01-04 Behnaz Gharekhanlou , Sina Khorasani

Thermoelectric effects in $p-n$ junctions are widely used for energy generation with thermal gradients, creation of compact Peltier refrigerators and, most recently, for sensitive detection of infrared and terahertz radiation. It is…

介观与纳米尺度物理 · 物理学 2025-04-09 Aleksandr S. Petrov , Dmitry Svintsov

Coherent control of optically-injected carrier distributions in single and bilayer graphene allows the injection of electrical currents. Using a tight-binding model and Fermi's golden rule, we derive the carrier and photocurrent densities…

材料科学 · 物理学 2011-05-05 J. Rioux , Guido Burkard , J. E. Sipe

An Atomic Force Microscope is used to locally manipulate a single layer graphene sheet. Transport measurements in this region as well as in the unmanipulated part reveal different charge carrier densities while mobilities stay in the order…

介观与纳米尺度物理 · 物理学 2015-06-12 H. Schmidt , J. C. Rode , C. Belke , D. Smirnov , R. J. Haug
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