相关论文: Domain Wall Resistance in Perpendicular (Ga,Mn)As:…

A series of microstructures designed to pin domain-walls (DWs) in (Ga,Mn)As with perpendicular magnetic anisotropy has been employed to determine extrinsic and intrinsic contributions to DW resistance. The former is explained quantitatively…

We exploit the ability to precisely control the magnetic domain structure of perpendicularly magnetized Pt/Co/Pt trilayers to fabricate artificial domain wall arrays and study their transport properties. The scaling behaviour of this model…

The theory of elasticity and pinning of domain walls in helical magnets is presented. Domain walls perpendicular to the helical axis show non-local elasticity and are marginally pinned by local disorder. Weak anisotropy combined with…

We investigate the anisotropy of magnetic reversal and current-driven domain wall motion in annealed Ga_0.95Mn_0.05As thin films and Hall bar devices with perpendicular magnetic anisotropy. Hall bars with current direction along the [110]…

The electrical resistance of a diffusive ferromagnet with magnetic domain walls is studied theoretically, taking into account the spatial dependence of the magnetization. The semiclassical domain wall resistance is found to be either…

We utilize a focused beam of Ga+ ions to define magnetization pinning sites in a ferromagnetic epilayer of (Ga,Mn)As. The nonmagnetic defects locally increase the magneto-crystalline anisotropy energies, by which a domain wall is pinned at…

We present results of numerical calculations of domain-wall resistance in the ferromagnetic semiconductor (Ga,Mn)As. We employ Landauer-Buttiker formalism and the tight binding method. Taking into account the full valence band structure we…

We present a theoretical analysis of recent experimental measurements of magnetoresistance in (Ga,Mn)As epilayers with perpendicular magnetic anisotropy. The model reproduces the field-antisymmetric anomalies observed in the longitudinal…

The pinning phenomena of the domain wall in the presence of exchange bias is studied analytically. The analytic solution of the domain wall spin configuration is presented. Unlike the traditional solution which is symmetric, our new…

Current induced magnetization switching and resistance associated with domain walls pinned in nanoconstrictions have both been previously reported in (Ga,Mn)As based devices, but using very dissimilar experimental schemes and device…

Transport through zincblende magnetic semiconductors with magnetic domain walls is studied theoretically. We show that these magnetic domain walls have an intrinsic resistance due to the spin-orbit interaction. The intrinsic resistance is…

The propagation of a domain wall in a submicron ferromagnetic spin-valve stripe is investigated using giant magnetoresistance. A notch in the stripe efficiently traps an injected wall stopping the domain propagation. The authors show that…

Intrinsic domain-wall resistance (DWR) in (Ga,Mn)As is studied theoretically and compared to experimental results. The recently developed model of spin transport in diluted ferromagnetic semiconductors [Van Dorpe et al., Phys. Rev. B 72,…

We demonstrate the presence of an important anisotropic magnetoresistance contribution to the domain wall resistance recently measured in thin-film (Ga,Mn)As with in-plane magnetic anisotropy. Analytic results for simple domain wall…

Mechanically bent nickel nanowires show clear features in their room temperature magnetoresistance when a domain wall is pinned at the location of the bend. By varying the direction of an applied magnetic field, the wire can be prepared…

We develop a theory to compute the domain-wall magnetoresistance (DWMR) in antiferromagnetic (AFM) metals with different spin structures. In the diffusive transport regime, the DWMR can be either {\it negative} or positive depending on the…

We have fabricated (Ga,Mn)As nanostructures in which domain walls can be pinned by sub-10 nm constrictions. Controlled by shape anisotropy, we can switch the regions on either side of the constriction to either parallel or antiparallel…

In this work we study the evolution of intrinsic domain wall magnetoresistance (DWMR) with domain wall confinement. Clean permalloy notched half-ring nanocontacts are fabricated using a special ultra-high vacuum electromigration procedure…

We report on the controllable pinning of domain walls in stripes with perpendicular magnetic anisotropy by magnetostatic coupling to magnetic vortices in disks located above the stripe. Pinning mechanisms and depinning fields are reported.…

In this work we perform investigations of the competition between domain-wall pinning and attraction by anti-notches and finite device borders. The conditions for optimal geometries, which can attain a stable domain-wall pinning, are…