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相关论文: Fully Overheated Single-Electron Transistor

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Interplay of cotunneling and single-electron tunneling in a thermally isolated single-electron transistor (SET) leads to peculiar overheating effects. In particular, there is an interesting crossover interval where the competition between…

介观与纳米尺度物理 · 物理学 2010-11-25 M. A. Laakso , T. T. Heikkilä , Yuli V. Nazarov

We investigate thermally-driven transport of heat and charge in a superconducting single-electron transistor by means of a real-time diagrammatic transport theory. Our theoretical approach allows us to account for strong Coulomb…

介观与纳米尺度物理 · 物理学 2021-12-01 Alexander G. Bauer , Björn Sothmann

By using the drone-fermion representation and the Schwinger-Keldysh approach, we calculate the current noise and the charge noise for a single-electron transistor in the non-equilibrium state in the presence of large quantum fluctuation of…

介观与纳米尺度物理 · 物理学 2009-11-07 Yasuhiro Utsumi , Hiroshi Imamura , Masahiko Hayashi , Hiromichi Ebisawa

We theoretically investigate the propagation of heat currents in a three-terminal quantum dot engine. Electron-electron interactions introduce state-dependent processes which can be resolved by energy-dependent tunneling rates. We identify…

介观与纳米尺度物理 · 物理学 2017-11-30 Rafael Sánchez , Holger Thierschmann , Laurens W. Molenkamp

The linear conductance of the single electron transistor is determined in the high temperature limit. Electron tunneling is treated nonperturbatively by means of a path integral formulation and the conductance is obtained from Kubo's…

介观与纳米尺度物理 · 物理学 2009-10-31 Georg Goeppert , Hermann Grabert

We study thermal conductance and thermopower of a metallic single-electron transistor beyond the limit of weak tunnel coupling. Employing both a systematic second-order perturbation expansion and a non-perturbative approximation scheme, we…

介观与纳米尺度物理 · 物理学 2007-05-23 Björn Kubala , Jürgen König

Fluctuations are strong in mesoscopic systems and have to be taken into account for the description of transport. We show that they can even be used as a resource for the operation of a system as a device. We use the physics of…

介观与纳米尺度物理 · 物理学 2017-06-07 Rafael Sánchez , Holger Thierschmann , Laurens W. Molenkamp

A general master equation is derived to describe an electromechanical single-dot transistor in the Coulomb blockade regime. In the equation, Fermi distribution functions in the two leads are taken into account, which allows one to study the…

介观与纳米尺度物理 · 物理学 2015-06-03 Wenxi Lai , Yunshan Cao , Zhongshui Ma

We present a comprehensive investigation of nonequilibrium effects and self heating in single electron transfer devices based primarily on the Coulomb blockade effect. During an electron trapping process, a hot electron may be deposited in…

凝聚态物理 · 物理学 2008-02-03 Chiu Liu , Qian Niu

Quantum correlation and hot-carrier transport represent two fundamentally distinct regimes of electronic conduction, rarely accessible within the same device. Here, we report a state-of-the-art monolayer transition metal dichalcogenides…

介观与纳米尺度物理 · 物理学 2025-11-11 Debottam Daw , Houcine Bouzid , Sung-Gyu Lee , Wujoon Cha , Ki Kang Kim , Min-kyu Joo , Yan Wang , Manish Chhowalla , Young Hee Lee

Previous studies have suggested a crossover from superdiffusive to normal heat transport in one-dimensional (1D) anharmonic oscillator systems with a double-well type interatomic interaction like $V(\xi)=-\xi^2/2+\xi^4/4$, when the system…

统计力学 · 物理学 2016-04-22 Daxing Xiong

We present experiments on a superconductor-normal metal electron refrigerator in a regime where single-electron charging effects are significant. The system functions as a heat transistor, i.e., the heat flux out from the normal metal…

介观与纳米尺度物理 · 物理学 2009-11-13 Olli-Pentti Saira , Matthias Meschke , Francesco Giazotto , Alexander M. Savin , Mikko Mottonen , Jukka P. Pekola

We analyze the noise properties of both electric charge and heat currents as well as their correlations in a quantum-dot based thermoelectric engine. The engine is a three-terminal conductor with crossed heat and charge flows where heat…

介观与纳米尺度物理 · 物理学 2013-12-10 Rafael Sánchez , Björn Sothmann , Andrew N. Jordan , Markus Büttiker

Experiments on the direction-resolved full-counting statistics of single-electron tunneling allow testing the fundamentally important Fluctuation Theorem (FT). At the same time, the FT provides a frame for analyzing such data. Here we…

介观与纳米尺度物理 · 物理学 2009-12-01 Y. Utsumi , D. S. Golubev , M. Marthaler , T. Fujisawa , Gerd Schön

We have observed asymmetric Fano resonances in the conductance of a single electron transistor resulting from interference between a resonant and a nonresonant path through the system. The resonant component shows all the features typical…

介观与纳米尺度物理 · 物理学 2009-10-31 J. Goeres , D. Goldhaber-Gordon , S. Heemeyer , M. A. Kastner , Hadas Shtrikman , D. Mahalu , U. Meirav

The hot electron magnetotransport in a spin-valve transistor has been theoretically explored at finite temperatures. We have explored the parallel and anti-parallel collector current changing the relative spin orientation of the…

凝聚态物理 · 物理学 2009-11-07 Jisang Hong

We study the thermopower of a quantum dot weakly coupled to two reservoirs by tunnel junctions. At low temperatures the transport through the dot is suppressed by charging effects (Coulomb blockade). As a result the thermopower shows an…

介观与纳米尺度物理 · 物理学 2009-11-07 M. Turek , K. A. Matveev

We study the temperature and gate voltage dependence of the conductance of the single electron transistor focusing on highly conducting devices. Electron tunneling is treated nonperturbatively by means of path integral Monte Carlo…

介观与纳米尺度物理 · 物理学 2009-10-31 Georg Goeppert , Bruno Huepper , Hermann Grabert

It is shown that the noise-limited charge sensitivity of a single-electron transistor using superconductors (of either $SISIS$ or $NISIN$ type) operating near the threshold of quasiparticle tunneling, can be considerably higher than that of…

凝聚态物理 · 物理学 2009-10-28 Alexander N. Korotkov

We study transport through a ferromagnetic single-electron transistor. The resistance is represented as a path integral, so that systems where the tunnel resistances are smaller than the quantum resistance can be investigated. Beyond the…

介观与纳米尺度物理 · 物理学 2009-10-31 X. H. Wang , A. Brataas
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