English

All-thermal transistor based on stochastic switching

Mesoscale and Nanoscale Physics 2017-06-07 v2

Abstract

Fluctuations are strong in mesoscopic systems and have to be taken into account for the description of transport. We show that they can even be used as a resource for the operation of a system as a device. We use the physics of single-electron tunneling to propose a bipartite device working as a thermal transistor. Charge and heat currents in a two terminal conductor can be gated by thermal fluctuations from a third terminal to which it is capacitively coupled. The gate system can act as a switch that injects neither charge nor energy into the conductor hence achieving huge amplification factors. Non-thermal properties of the tunneling electrons can be exploited to operate the device with no energy consumption.

Keywords

Cite

@article{arxiv.1701.00382,
  title  = {All-thermal transistor based on stochastic switching},
  author = {Rafael Sánchez and Holger Thierschmann and Laurens W. Molenkamp},
  journal= {arXiv preprint arXiv:1701.00382},
  year   = {2017}
}

Comments

5 pages, 3 figures. Published version

R2 v1 2026-06-22T17:39:09.150Z