相关论文: Introduction to Spin-Polarized Ballistic Hot Elect…

We use all-electrical methods to inject, transport, and detect spin-polarized electrons vertically through a 350-micron-thick undoped single-crystal silicon wafer. Spin precession measurements in a perpendicular magnetic field at different…

Spin injection and detection in silicon is a difficult problem, in part because the weak spin-orbit coupling and indirect gap preclude using standard optical techniques. We propose two ways to overcome this difficulty, and illustrate their…

The electron spin lifetime and diffusion length are transport parameters that define the scale of coherence in spintronic devices and circuits. Since these parameters are many orders of magnitude larger in semiconductors than in metals,…

Electrical spin injection and transport in silicon are central challenges for realizing semiconductor-based spintronic devices, particularly in p-type Si, where strong spin relaxation and interface effects often suppress detectable spin…

We demonstrate the injection and transport of spin-polarized electrons through n-type doped silicon with in-plane spin-valve and perpendicular magnetic field spin precession and dephasing ("Hanle effect") measurements. A voltage applied…

A longstanding goal of research in semiconductor spintronics is the ability to inject, modulate, and detect electron spin in a single device. A simple prototype consists of a lateral semiconductor channel with two ferromagnetic contacts,…

A hybrid ferromagnet/semiconductor device is used to determine a lower bound on the spin lifetime for conduction electrons in silicon. We use spin precession to self-consistently measure the drift velocity vs. drift field of spin-polarized…

Using long-distance lateral devices, spin transport near the interface of Si and its native oxide (SiO2) is studied by spin-valve measurements in an in-plane magnetic field and spin precession measurements in a perpendicular magnetic field…

Implementing spin functionalities in Si, and understanding the fundamental processes of spin injection and detection, are the main challenges in spintronics. Here we demonstrate large spin polarizations at room temperature, 34% in n-type…

Experimental evidence of electron spin precession during travel through the phosphorus-doped Si channel of an all-electrical device simultaneously indicates two distinct processes: (i) short timescales (~50ps) due to purely conduction-band…

We theoretically investigate electron spin injection and spin-polarization sensitive current detection at Schottky contacts between a ferromagnetic metal and an n-type or p-type semiconductor. We use spin-dependent continuity equations and…

Electrical spin transport and accumulation have been measured in highly Si doped Al0.3Ga0.7As utilizing a lateral spin transport device. Persistent photoconductivity allows for the tuning of the effective carrier density of the channel…

The electrical injection of spin polarized electrons in a semiconductor can be achieved in principle by driving a current from a ferromagnetic metal, where current is known to be significantly spin polarized, into the semiconductor via…

There has been much interest in the injection and detection of spin polarized carriers in semiconductors for the purposes of developing novel spintronic devices. Here we report the electrical injection and detection of spin-polarized…

Long carrier spin lifetimes are a double-edged sword for the prospect of constructing "spintronic" logic devices: Preservation of the logic variable within the transport channel or interconnect is essential to successful completion of the…

We present a study of spin transport in charge and spin inhomogeneous semiconductor systems. In particular, we investigate the propagation of spin-polarized electrons through a boundary between two semiconductor regions with different…

We explore electrically injected, spin polarized transport in a ballistic two-dimensional electron gas. We augment the Buettiker-Landauer picture with a simple, but realistic model for spin-selective contacts to describe multimode…

A theory of spin-polarized electron transport in ferromagnet-semiconductor heterostructures, based on a unified semiclassical description of ballistic and diffusive transport in semiconductors, is outlined. The aim is to provide a framework…

A longitudinal electric field is used to control the transit time (through an undoped silicon vertical channel) of spin-polarized electrons precessing in a perpendicular magnetic field. Since an applied voltage determines the final spin…

The generation, manipulation and detection of spin-polarized electrons in nanostructures define the main challenges of spin-based electronics[1]. Amongst the different approaches for spin generation and manipulation, spin-orbit coupling,…