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相关论文: Chemical-etch-assisted growth of epitaxial zinc ox…

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This study investigates the formation of zinc oxide (ZnO) nanoparticles, a material of significant technological interest with complex structural properties, through atom-by-atom deposition modeling a process common in bottom-up synthesis.…

材料科学 · 物理学 2026-04-14 Quentin Gromoff , Magali Benoit , Jacek Goniakowski , Carlos R. Salazar , Julien Lam

The present study describes a facile route of zinc oxide (ZnO) grows using the solution-dependent electrostatic spray deposition (ESD) method at temperatures ranging from 300 {\deg}C - 500 {\deg}C. In this work, zinc chloride (ZnCl2) was…

材料科学 · 物理学 2024-06-21 Fysol Ibna Abbas , Mutsumi Sugiyama

In this study we report on a novel two-step epitaxial growth technique that enables a significant improvement of the crystal quality of nitrogen-polar GaN. The starting material is grown on 4{\deg} vicinal sapphire substrates by metal…

材料科学 · 物理学 2024-08-06 Pietro Pampili , Vitaly Z. Zubialevich , Peter J. Parbrook

The preparation of two-dimensional transition metal dichalcogenides on an industrially relevant scale will rely heavily on bottom-up methods such as chemical vapour deposition. In order to obtain sufficiently large quantities of…

材料科学 · 物理学 2022-08-18 E. Pollmann , A. Maas , D. Marnold , A. Hucht , R. Neubieser , M. Stief , L. Madauß , M. Schleberger

Controlling the growth of zinc oxide nanowires is necessary to optimize the performances of nanowire-based devices such as photovoltaic solar cells, nano-generators, or light-emitting diodes. In this view, we investigate the nucleation and…

Heteroepitaxial growth of selected group IV-VI nitrides on various orientations of sapphire (\alpha-Al2O3) is demonstrated using atomic layer deposition. High quality, epitaxial films are produced at significantly lower temperatures than…

The growth of graphene during Cu-catalyzed chemical vapor deposition was studied using 12CH4 and 13CH4 precursor gasses. We suggest that the growth begins by the formation of a multilayer cluster. This seed increases its size but the growth…

介观与纳米尺度物理 · 物理学 2012-08-29 Martin Kalbac , Otakar Frank , Ladislav Kavan

We have investigated the initial growth behavior and resulting microstructural properties of heteroepitaxial ZnO thin films prepared by pulsed laser deposition on sapphire (0001) substrates. High-resolution x-ray diffraction and…

材料科学 · 物理学 2015-06-25 C. Liu , S. H. Chang , T. W. Noh , M. Abouzaid , P. Ruterana , H. H. Lee , D. -W. Kim , J. -S. Chung

Epitaxial copper thin films were deposited by magnetron sputtering. The adatoms during deposition are influenced by deposition parameters which cause variations in thin film properties. XRD and FESEM studies were done to get an insight into…

材料科学 · 物理学 2015-09-22 A. S. Bhattacharyya , S. Kumar , S. Jana , P. Y. Kommu , K. Gaurav , S. Prabha , V. S. Kujur , P. Bharadwaj

We have succeeded in growing epitaxial and highly stoichiometric films of EuO on yttria-stabilized cubic zirconia (YSZ) (001). The use of the Eu-distillation process during the molecular beam epitaxy assisted growth enables the consistent…

Epitaxial films have the potential to be used as model systems for fundamental investigations on the martensitic transformation in binary NiTi. In this paper, we discuss growth of binary NiTi thin films on single crystalline MgO substrates.…

ZnO bulk crystals can be grown by several methods. 1) From the gas phase, usually by chemical vapor transport. Such CVT crystals may have high chemical purity, as the growth is performed without contact to foreign material. The…

材料科学 · 物理学 2019-06-05 Detlef Klimm , Detlev Schulz , Steffen Ganschow , Zbigniew Galazka , Reinhard Uecker

With ZnTe as an example, we use two different methods to unravel the characteristics of the growth of nanowires by gold-catalyzed molecular beam epitaxy at low temperature. In the first approach, CdTe insertions have been used as markers,…

介观与纳米尺度物理 · 物理学 2016-06-08 P. Rueda-Fonseca , M. Orrù , E. Bellet-Amalric , E. Robin , M. Den Hertog , Y. Genuist , R. André , S. Tatarenko , J. Cibert

The article consists of four sections all dealing with the computational modeling of the sputtering process. The first section deals with the difference in Bismuth atomic layer deposition at different polar angle and ion flounce. In the…

The conditions whereby epitaxy is achieved are commonly believed to be mostly governed by misfit strain. We report on a systematic investigation of growth and interface structure of single crystalline tungsten thin films on two different…

NiO/ZnO heterostructures are grown on c-sapphire substrates using pulsed laser deposition (PLD) technique. X-ray diffraction study shows that the ZnO layer epitaxially grows along [0001]-direction on (0001)sapphire surface as expected.…

材料科学 · 物理学 2024-09-10 Bhabani Prasad Sahu , Amandeep Kaur , Simran Arora , Subhabrata Dhar

Epitaxially grown nanowires have shown promise for photovoltaic applications due to their nanophotonic properties. Moreover, the mechanical properties of nanowires can reduce crystallographic defect formation at interfaces to help enable…

The Zn K-edge X-ray absorption spectroscopy has been used to investigate in situ the decomposition of zinc peroxide (ZnO$_2$) to zinc oxide (ZnO). Principal component and linear combination analyses of the EXAFS spectra have been employed…

材料科学 · 物理学 2022-10-03 Alexei Kuzmin , Inga Pudza , Konstantin Klementiev

We present models of electrodeposition of ZnO films with organic additives, with focus on the growth of hybrid films with eosin Y. First we propose a rate equation model which assumes that the additives form branches with an exposed part…

化学物理 · 物理学 2016-09-08 Fabio D. A. Aarao Reis , J. P. Badiali , Thierry Pauporte , Daniel Lincot

High quality ZnO thin films were gown using the pulsed laser deposition technique on (0001) Al$_2$O$_3$ substrates in an oxidizing atmosphere, using a Zn metallic target. We varied the growth conditions such as the deposition temperature…

材料科学 · 物理学 2009-11-10 A. Fouchet , W. Prellier , B. Mercey , L. Mechin , V. N. Kulkarni , T. Venkatesan
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