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Majority of the A$_2$B$_3$ type chalcogenide systems with strong spin-orbit coupling, like Bi$_2$Se$_3$, Bi$_2$Te$_3$ and Sb$_2$Te$_3$ etc., are topological insulators. One important exception is Sb$_2$Se$_3$, where a topological…

介观与纳米尺度物理 · 物理学 2018-06-13 Shekhar Das , Suman Kamboj , Anshu Sirohi , Aastha Vasdev , Sirshendu Gayen , Prasenjit Guptasarma , Goutam Sheet

In the recently discovered class of materials known as topological insulators, the presence of strong spin-orbit coupling causes certain topological invariants in the bulk to differ from their values in vacuum. The sudden change of…

Topological insulators are new states of quantum matter with surface states protected by the time-reversal symmetry. In this work, we perform first-principle electronic structure calculations for $Sb_2Te_3$, $Sb_2Se_3$, $Bi_2Te_3$ and…

介观与纳米尺度物理 · 物理学 2008-12-10 Haijun Zhang , Chao-Xing Liu , Xiao-Liang Qi , Xi Dai , Zhong Fang , Shou-Cheng Zhang

Achieving true bulk insulating behavior in Bi$_2$Se$_3$, the archetypal topological insulator with a simplistic one-band electronic structure and sizable band gap, has been prohibited by a well-known self-doping effect caused by selenium…

材料科学 · 物理学 2017-01-19 Paul Syers , Johnpierre Paglione

Three-dimensional (3-D) topological insulators (TI) are characterized by the presence of metallic surface states and a bulk band gap. Recently theoretical and experimental studies have shown an induced gap in the surface state bands of TI…

介观与纳米尺度物理 · 物理学 2012-12-21 Jiwon Chang , Leonard F. Register , Sanjay K. Banerjee

We report a transport study of exfoliated few monolayer crystals of topological insulator Bi$_2$Se$_3$ in an electric field effect (EFE) geometry. By doping the bulk crystals with Ca, we are able to fabricate devices with sufficiently low…

介观与纳米尺度物理 · 物理学 2011-06-21 J. G. Checkelsky , Y. S. Hor , R. J. Cava , N. P. Ong

Pure Topological Insulating materials preserve a unique electronic state comprising of bulk insulating gap and conducting surface states. Here we use bulk Bi2Se3 single crystals possessing Se vacancy defects as a prototype topological…

材料科学 · 物理学 2019-08-13 Amit Jash , Kamalika Nath , T. R. Devidas , A. Bharathi , S. S. Banerjee

We present an infrared magneto-optical study of the highly thermoelectric narrow-gap semiconductor Bi$_2$Se$_3$. Far-infrared and mid-infrared (IR) reflectance and transmission measurements have been performed in magnetic fields oriented…

强关联电子 · 物理学 2010-07-05 A. D. LaForge , A. Frenzel , B. C. Pursley , Tao Lin , Xinfei Liu , Jing Shi , D. N. Basov

Crystalline $\rm Bi_2Se_3$ is one of the most explored three-dimensional topological insulator, with a $0.3\;\rm eV$ energy gap making it promising for applications. Its amorphous counterpart could bring to light new possibilities for large…

Topological insulators (TIs) are materials with an insulating bulk characterized by a gapped band structure, along with gapless metallic surface states having a Dirac cone with a helical spin structure in momentum space. The helical…

材料科学 · 物理学 2024-09-02 Sumana Paul , Moumita Das , Sujoy Datta , Raja Chakraborty , Prabhat Mandal , P. K. Giri

Topological insulators embody a new state of matter characterized entirely by the topological invariants of the bulk electronic structure rather than any form of spontaneously broken symmetry. Unlike the 2D quantum Hall or quantum…

We report on electric-field and temperature dependent transport measurements in exfoliated thin crystals of Bi$_{2}$Se$_{3}$ topological insulator. At low temperatures ($< 50$ K) and when the chemical potential lies inside the bulk gap, the…

介观与纳米尺度物理 · 物理学 2015-06-19 M. V. Costache , I. Neumann , J. F. Sierra , V. Marinova , M. M. Gospodinov , S. Roche , S. O. Valenzuela

We report x-ray diffraction, electrical resistivity, and magnetoresistance measurements on Bi2Se3 under high pressure and low temperature conditions. Pressure induces profound changes in both the room temperature value of the electrical…

By means of relativistic density functional theory (DFT) calculations we study electron band structure of the topological insulator (TI) Bi$_2$Se$_3$ thin films deposited on the ferromagnetic insulator (FMI) EuS substrate. In the…

材料科学 · 物理学 2015-12-09 S. V. Eremeev , V. N. Men'shov , V. V. Tugushev , E. V. Chulkov

We show that by Ca-doping the Bi2Se3 topological insulator, the Fermi level can be fine tuned to fall inside the band gap and therefore suppress the bulk conductivity. Non-metallic Bi2Se3 crystals are obtained. On the other hand, the Bi2Se3…

强关联电子 · 物理学 2015-05-19 Y. S. Hor , J. G. Checkelsky , D. Qu , N. P. Ong , R. J. Cava

Topological insulators are insulating in the bulk but possess metallic surface states protected by time-reversal symmetry. Here, we report a detailed electronic transport study in high quality Bi2Se3 topological insulator thin films…

Bi2Se3 is a prototypical topological insulator which has a small band gap (~0.3 eV) and topologically protected conducting surface states. This material exhibits quite strong thermoelectric effects. Here we show in a mechanically exfoliated…

Topological insulators(1-8) are a novel form of matter which features metallic surface states with quasirelativistic dispersion similar to graphene(9). Unlike graphene, the locking of spin and momentum and the protection by time-reversal…

介观与纳米尺度物理 · 物理学 2012-07-23 M. R. Scholz , J. Sánchez-Barriga , D. Marchenko , A. Varykhalov , A. Volykhov , L. V. Yashina , O. Rader

Topological insulators are a novel class of quantum materials in which time-reversal symmetry, relativistic (spin-orbit) effects and an inverted band structure result in electronic metallic states on the surfaces of bulk crystals. These…

Topological insulators are bulk insulators with exotic surface states, protected under time-reversal symmetry, that hold promise in observing many exciting condensed-matter phenomena. In this report, we show that by having a topological…

介观与纳米尺度物理 · 物理学 2019-10-29 S. Mathimalar , S. Sasmal , P. Rajasekhar , A. Bhardwaj , S. Chaudhary , B. Satpati , K. V. Raman
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