相关论文: Calculation of Cu/Ta interface electron transmissi…
The strong non-linear increase in Cu interconnect line resistance with a decrease in linewidth presents a significant obstacle to their continued downscaling. In this letter we use first principles density functional theory based electronic…
Monolayer TaS$_{2}$ is being explored as a future liner/barrier to circumvent the scalability issues of the state-of-the-art interconnects. However, its large vertical resistivity poses some concerns and mandates a comprehensive circuit…
Tunneling of electrons through the barriers in heterostructures has been studied, within unified transfer matrix approach. The effect of barrier width on the transmission coefficient of the electrons has been investigated for different…
We calculate the conductance of a quantum wire with two occupied subbands in a presence of a barrier taking into account the interaction between electrons. We extend the renormalization-group equation for the scattering matrix of the…
The increasing resistance of Cu interconnects for decreasing dimensions is a major challenge in continued downscaling of integrated circuits beyond the 7-nm technology node as it leads to unacceptable signal delays and power consumption in…
The miniaturization of electronic devices brings severe challenges in the deposition of metal interconnects in back end of line processing due to a continually decreasing volume available for metal deposition in the interconnect via. Cu is…
Copper nanolines fabricated by the damascene process are commonly used as interconnects in advanced electronic devices. The copper resistivity increases above the bulk value because of confinement, in detriment of performance. Recent…
Several issues concerning the applicability of the temperature coefficient of the resistivity (TCR) method to scaled interconnect lines are discussed. The central approximation of the TCR method, the substitution of the interconnect wire…
A new formalism to calculate the transmission coefficient t of electrons from a material L into the same material L through a barrier B is presented. The barrier B is arbitrary and can be metallic, semiconducting or insulating. The…
The effect of interface scattering on the performance of disordered, nanocomposite thermoelectric materials is studied theoretically using effective medium theory and direct numerics. The interfacial electronic and phonon scattering…
The effects of an atomistic interface roughness in n-type silicon nanowire transistors (SiNWT) on the radio frequency performance are analyzed. Interface roughness scattering (IRS) is statistically investigated through a three dimensional…
Scattering from a compound barrier, one composed of a number of distinct non-overlapping sub-barriers, has a number of interesting and subtle mathematical features. If one is scattering classical particles, where the wave aspects of the…
The spin-orbit field and interfacial exchange field are two major interface phenomena, and the detection and manipulation of these fields can enable a variety of nanoscale spintronics devices. Optimizing the interfacial exchange field,…
Charge redistribution at interfaces is crucial for electronic applications of high-Tc superconductors, since the band structure is modified on a local scale. We address the normal-state electronic structure of YBa2Cu3O7 (YBCO) at an…
The generation of high magnetic fields requires materials with high electric conductivity and good strength properties. Cu/Nb composites are considered to be good candidates for this purpose. In this work we aim to predict, from theory, the…
The electronic properties of interfaces between two different solids can differ strikingly from those of the constituent materials. For instance, metallic conductivity, and even superconductivity, have been recently discovered at interfaces…
We analyze an interplay between the proximity effect and quantum interference of electrons in hybrid structures superconductor-normal metal-superconductor which contain several insulating barriers. We demonstrate that the dc Josephson…
Inspired by the problem of elastic wave scattering on wrinkled interfaces, we studied the scattering of ballistic electrons on a wrinkled potential energy region. The electron transmission coefficient depends on both wrinkle amplitude and…
We use numerical simulations to investigate the effect of electrostatics on the source and drain contacts of carbon nanotube field-effect transistors. We find that unscreened charge on the nanotube at the contact-channel interface leads to…
The effective barrier height between an electrode and a ferroelectric (FE) depends on both macroscopic electrical properties and microscopic chemical and electronic structure. The behavior of a prototypical electrode/FE/electrode structure,…